scholarly journals Metal Filament İçeren İpliklerden Üretilen Süprem Örme Kumaşların Farklı Doğrultulardaki Yüzey Özdirençlerinin İncelenmesi

2018 ◽  
Vol 33 (2) ◽  
pp. 1-160
Author(s):  
İlkan Özkan
Keyword(s):  
Metal Filament

Study on Threshold Behavior of Operation Voltage in Metal Filament-Based Polymer Memory

2007 ◽  
Vol 111 (27) ◽  
pp. 7756-7760 ◽  
Author(s):  
Won-Jae Joo ◽  
Tae-Lim Choi ◽  
Kwang-Hee Lee ◽  
Youngsu Chung
Keyword(s):  
Threshold Behavior ◽  
Metal Filament ◽  
Polymer Memory

Metal Filament Growth in Electrically Conductive Polymers for Nonvolatile Memory Application

2006 ◽  
Vol 110 (47) ◽  
pp. 23812-23816 ◽  
Author(s):  
Won-Jae Joo ◽  
Tae-Lim Choi ◽  
Jaeho Lee ◽  
Sang Kyun Lee ◽  
Myung-Sup Jung ◽  
...  
Keyword(s):  
Nonvolatile Memory ◽  
Conductive Polymers ◽  
Electrically Conductive ◽  
Metal Filament

scholarly journals Production of Metal Filament by In-Rotating-Water Spinning Method

1981 ◽  
Vol 45 (7) ◽  
pp. 751-758 ◽  
Author(s):  
Itsuo Ohnaka ◽  
Tatsuichi Fukusako ◽  
Tetsutaro Ohmichi
Keyword(s):  
Metal Filament

Nanoionics and its device applications

2017 ◽  
Author(s):  
T. Hasegawa ◽  
K. Terabe ◽  
T. Sakamoto ◽  
M. Aono
Keyword(s):  
Solid Electrolytes ◽  
Current Flow ◽  
Electrochemical Reaction ◽  
Electronic Devices ◽  
Low Power Consumption ◽  
Ionic Conductors ◽  
Conductive Materials ◽  
Device Applications ◽  
Metal Filament ◽  
Atomic Switch

This article discusses nanoionics phenomena and their applications for making new types of electronic devices. It begins with an overview of ionic conductive materials, which are classified into two categories in terms of the charged particles: solid electrolytes in which only ions contribute to the current flow, and mixed electronic and ionic conductors in which bothelectrons and ions contribute to the current flow. It then describes the solid electrochemical reaction that controls metal-filament growth and shrinkage in an atomic switch, along with the fundamentals of an atomic switch. It also considers new types of atomic switches and several applications of atomic switches. Finally, it highlights some novel characteristics of the atomic switch such as small size, low power consumption, non-volatility, and low on-resistance. These characteristics enable us to improve the performance of present-day electronic devices.

scholarly journals Some adsorption isothermals for a plane platinum surface

1929 ◽  
Vol 122 (790) ◽  
pp. 487-497 ◽  
Keyword(s):  
Adsorption Layer ◽  
Chemical Heterogeneity ◽  
Surface Films ◽  
Platinum Surface ◽  
Homogeneous Surface ◽  
Direct Technique ◽  
Chemical Combination ◽  
Great Ease ◽  
Metal Filament ◽  
The Subject

Quantitative experiments to establish the isothermals of adsorption on nonporous surfaces have only rarely been undertaken, owing mainly, no doubt, to the obvious difficulty of measuring the small absolute adsorptions on surfaces of manageable size. Yet it can well be held that many, if not all, of the uncertainties still attaching to the mechanism of adsorption and the constitution of the adsorption layer depend not upon any inherent complexity in the process itself, but upon the complicated geometrical and chemical con­ditions existing in the accessible surfaces of the porous materials, such as charcoal, that have so often been the subject of study. Moreover, it is by no means easy to determine in many cases what parts of the total “sorption” are due to adsorption, solid solution, or even chemical combination. McBain has emphasised the sensitiveness of the course of adsorption to the progressive removal of chemical heterogeneity from a porous surface. Some applications of the electric coherer to adsorption problems have been described in former communications; it may perhaps be appropriate to recall the main advantages that the method appears to possess over the more direct technique in common use; ( a ) the adsorption takes place on the non-porous and chemically homogeneous surface of a fine metal filament, that can be submitted to heat treatment electrically with great ease; ( b ) there is an immediate and direct test of the “bareness” of the surface, quite independently of the subsequent adsorption experiments; ( c ) from the nature of the technique only true surface films play any part in the measurements. The principal disadvantage is that the adsorbed amount is measured by the critical cohering voltage instead of directly, but this difficulty can be surmounted in the follow­ing way.

Frontside and Backside Analysis of Surface ESD

2008 ◽  
Author(s):  
Dermot Daly ◽  
Linda Grogan ◽  
Fergal Keating
Keyword(s):  
Failure Analysis ◽  
Cross Sections ◽  
Assembly Process ◽  
Front Side ◽  
Final Test ◽  
Strong Case ◽  
Encapsulation Process ◽  
Metal Filament ◽  
Static Discharge

Abstract In an effort to understand the failing mechanism of power to ground (Vdd-GND) shorts found on FPGA devices by standard ATE methods at Final Test; the recently discovered ESDFOS (Electro Static Discharge from Outside to Surface)[1] mechanism was revealed as the perpetrator. This ESDFOS was first brought to the attention of the authors when it was seen in the May 2005 issue of the EDFA magazine [2].The physical signatures of ESDFOS such as cracked SiN passivation, Al metal filament spiking, SiO2 dielectric break down can often be related to other failing mechanisms and it can therefore be difficult to irrefutably associate those physical signature to ESDFOS and to make a strong case for action. In this paper standard front side FIB cross sections combined with a novel backside technique were used to establish that the failing devices underwent an ESDFOS event prior to the epoxy encapsulation process. Using the failure analysis results alterations were made to the assembly process which have reduced the occurrence of Vdd-GND shorts.

Watching a metal filament grow

Science ◽  
2021 ◽  
Vol 373 (6557) ◽  
pp. 866.6-867
Author(s):  
Jelena Stajic
Keyword(s):  
Metal Filament
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