scholarly journals THE THERMAL OXIDATION EFFECT OF THE SINGLE CRYSTAL SILICON (100) ON THE MAGNETIC PROPERTIES OF ULTRA-THIN FILMS OF COBALT.

2018 ◽  
Vol 6 (8) ◽  
pp. 423-429
Author(s):  
AAdanlete Adjanoh. ◽  
Keyword(s):  
Thin Films ◽  
Magnetic Properties ◽  
Single Crystal ◽  
Thermal Oxidation ◽  
Single Crystal Silicon ◽  
Crystal Silicon ◽  
Oxidation Effect

The Use of Energy Dispersive Diffractometry to Measure the Thickness of Metal and Glass Thin Films

1981 ◽  
Vol 25 ◽  
pp. 365-371
Author(s):  
Glen A. Stone
Keyword(s):  
Thin Films ◽  
Single Crystal ◽  
Single Crystal Silicon ◽  
Substrate Material ◽  
Silicon Wafers ◽  
Energy Dispersive ◽  
Crystal Silicon ◽  
X Ray ◽  
Phosphosilicate Glass ◽  
Film Substrate

This paper presents a new method to measure the thickness of very thin films on a substrate material using energy dispersive x-ray diffractometry. The method can be used for many film-substrate combinations. The specific application to be presented is the measurement of phosphosilicate glass films on single crystal silicon wafers.

Low cycle fatigue of single crystal silicon thin films

2007 ◽  
Vol 140 (2) ◽  
pp. 257-265 ◽  
Author(s):  
Hsien-Kuang Liu ◽  
B.J. Lee ◽  
Pang-Ping Liu
Keyword(s):  
Thin Films ◽  
Single Crystal ◽  
Low Cycle Fatigue ◽  
Single Crystal Silicon ◽  
Cycle Fatigue ◽  
Crystal Silicon ◽  
Silicon Thin Films

Formation of Heusler alloy Co2FeSi thin films on the surface of single-crystal silicon

2011 ◽  
Vol 56 (11) ◽  
pp. 1670-1674 ◽  
Author(s):  
M. V. Gomoyunova ◽  
G. S. Grebenyuk ◽  
I. I. Pronin
Keyword(s):  
Thin Films ◽  
Single Crystal ◽  
Heusler Alloy ◽  
Single Crystal Silicon ◽  
Crystal Silicon

Influence of sub-micrometer notches on the fracture of single crystal silicon thin films

2007 ◽  
Vol 30 (12) ◽  
pp. 1172-1181 ◽  
Author(s):  
X. LI ◽  
T. KASAI ◽  
S. NAKAO ◽  
T. ANDO ◽  
M. SHIKIDA ◽  
...  
Keyword(s):  
Thin Films ◽  
Single Crystal ◽  
Single Crystal Silicon ◽  
Crystal Silicon ◽  
Silicon Thin Films

Structural study of TiO2 thin films by micro-Raman spectroscopy

Open Physics ◽  
2006 ◽  
Vol 4 (1) ◽  
pp. 105-116 ◽  
Author(s):  
Ahti Niilisk ◽  
Mart Moppel ◽  
Martti Pärs ◽  
Ilmo Sildos ◽  
Taavi Jantson ◽  
...  
Keyword(s):  
Thin Films ◽  
Raman Spectroscopy ◽  
Single Crystal ◽  
Anatase Phase ◽  
Single Crystal Silicon ◽  
Atomic Layer ◽  
Fused Silica ◽  
Tio2 Thin Films ◽  
Crystal Silicon ◽  
Sapphire Substrates

AbstractThe Raman spectroscopy method was used for structural characterization of TiO2 thin films prepared by atomic layer deposition (ALD) and pulsed laser deposition (PLD) on fused silica and single-crystal silicon and sapphire substrates. Using ALD, anatase thin films were grown on silica and silicon substrates at temperatures 125–425 °C. At higher deposition temperatures, mixed anatase and rutile phases grew on these substrates. Post-growth annealing resulted in anatase-to-rutile phase transitions at 750 °C in the case of pure anatase films. The films that contained chlorine residues and were amorphous in their as-grown stage transformed into anatase phase at 400 °C and retained this phase even after annealing at 900 °C. On single crystal sapphire substrates, phase-pure rutile films were obtained by ALD at 425 °C and higher temperatures without additional annealing. Thin films that predominantly contained brookite phase were grown by PLD on silica substrates using rutile as a starting material.

Sign in / Sign up

Export Citation Format

Share Document