Anomalous Effect of Lattice Misfit on the Coarsening Behavior of Multicomponent L12 Phase

2020 ◽  
Author(s):  
Feng He ◽  
Kaiwei Zhang ◽  
Guma Yeli ◽  
Yang Tong ◽  
Daixiu Wei ◽  
...  
Keyword(s):  
Lattice Misfit ◽  
Anomalous Effect ◽  
Coarsening Behavior

Anomalous effect of lattice misfit on the coarsening behavior of multicomponent L12 phase

2020 ◽  
Vol 183 ◽  
pp. 111-116 ◽  
Author(s):  
Feng He ◽  
Kaiwei Zhang ◽  
Guma Yeli ◽  
Yang Tong ◽  
Daixiu Wei ◽  
...  
Keyword(s):  
Lattice Misfit ◽  
Anomalous Effect ◽  
Coarsening Behavior

Effects of substrate quality and annealing on defect structures at GaAs/Si interfaces

1987 ◽  
Vol 45 ◽  
pp. 340-341
Author(s):  
H. L. Tsai ◽  
J. W. Lee
Keyword(s):  
Growth Process ◽  
Molecular Beam ◽  
Substrate Surface ◽  
Lattice Misfit ◽  
Device Fabrication ◽  
Silicon Substrates ◽  
Defect Structures ◽  
Gaas Film ◽  
Substrate Quality ◽  
Gaas On Si

Growth of GaAs on Si using epitaxial techniques has been receiving considerable attention for its potential application in device fabrication. However, because of the 4% lattice misfit between GaAs and Si, defect generation at the GaAs/Si interface and its propagation to the top portion of the GaAs film occur during the growth process. The performance of a device fabricated in the GaAs-on-Si film can be degraded because of the presence of these defects. This paper describes a HREM study of the effects of both the substrate surface quality and postannealing on the defect propagation and elimination.The silicon substrates used for this work were 3-4 degrees off [100] orientation. GaAs was grown on the silicon substrate by molecular beam epitaxy (MBE).

The wustite-spinel interface

1987 ◽  
Vol 45 ◽  
pp. 268-269
Author(s):  
S.R. Summerfelt ◽  
C.B. Carter
Keyword(s):  
Solid State ◽  
Solid State Reaction ◽  
Strain Energy ◽  
Matrix Material ◽  
Lattice Misfit ◽  
Solid State Reactions ◽  
Oxygen Sublattice ◽  
Large Particles ◽  
Small Lattice ◽  
Coherent Interfaces

The wustite-spinel interface can be viewed as a model interface because the wustite and spinel can share a common f.c.c. oxygen sublattice such that only the cations distribution changes on crossing the interface. In this study, the interface has been formed by a solid state reaction involving either external or internal oxidation. In systems with very small lattice misfit, very large particles (>lμm) with coherent interfaces have been observed. Previously, the wustite-spinel interface had been observed to facet on {111} planes for MgFe2C4 and along {100} planes for MgAl2C4 and MgCr2O4, the spinel then grows preferentially in the <001> direction. Reasons for these experimental observations have been discussed by Henriksen and Kingery by considering the strain energy. The point-defect chemistry of such solid state reactions has been examined by Schmalzried. Although MgO has been the principal matrix material examined, others such as NiO have also been studied.

Epitaxial Growth in Dislocation-Free Strained Alloy Films

2002 ◽  
Vol 715 ◽  
Author(s):  
Zhi-Feng Huang ◽  
Rashmi C. Desai
Keyword(s):  
Deposition Rate ◽  
Elastic Moduli ◽  
Composition Dependence ◽  
Critical Thickness ◽  
Lattice Misfit ◽  
Misfit Strain ◽  
Joint Stability ◽  
Alloy Films ◽  
The Stability ◽  
Stability Results

AbstractThe morphological and compositional instabilities in the heteroepitaxial strained alloy films have attracted intense interest from both experimentalists and theorists. To understand the mechanisms and properties for the generation of instabilities, we have developed a nonequilibrium, continuum model for the dislocation-free and coherent film systems. The early evolution processes of surface pro.les for both growing and postdeposition (non-growing) thin alloy films are studied through a linear stability analysis. We consider the coupling between top surface of the film and the underlying bulk, as well as the combination and interplay of different elastic effects. These e.ects are caused by filmsubstrate lattice misfit, composition dependence of film lattice constant (compositional stress), and composition dependence of both Young's and shear elastic moduli. The interplay of these factors as well as the growth temperature and deposition rate leads to rich and complicated stability results. For both the growing.lm and non-growing alloy free surface, we determine the stability conditions and diagrams for the system. These show the joint stability or instability for film morphology and compositional pro.les, as well as the asymmetry between tensile and compressive layers. The kinetic critical thickness for the onset of instability during.lm growth is also calculated, and its scaling behavior with respect to misfit strain and deposition rate determined. Our results have implications for real alloy growth systems such as SiGe and InGaAs, which agree with qualitative trends seen in recent experimental observations.

Coarsening Behavior of an Alpha-Beta Titanium Alloy

2004 ◽  
Author(s):  
S. L. Semiatin ◽  
B. C. Kirby ◽  
G. A. Salishchev
Keyword(s):  
Titanium Alloy ◽  
Beta Titanium Alloy ◽  
Beta Titanium ◽  
Coarsening Behavior ◽  
Alpha Beta

Effects of microstructure and lattice misfit on creep life of Ni-based single crystal superalloy during long-term thermal exposure

2021 ◽  
Vol 0 (0) ◽  
Author(s):  
Wenyan Gan ◽  
Hangshan Gao ◽  
Haiqing Pei ◽  
Zhixun Wen
Keyword(s):  
Single Crystal ◽  
Rupture Life ◽  
Precipitation Amount ◽  
Lattice Misfit ◽  
Thermal Exposure ◽  
Phase Evolution ◽  
Creep Rupture ◽  
Simultaneous Increase ◽  
Creep Life ◽  
The Matrix

Abstract According to the microstructural evolution during longterm thermal exposure at 1100 °C, the creep rupture life of Ni-based single crystal superalloys at 980 °C/270 MPa was evaluated. The microstructure was characterized by means of scanning electron microscopy, X-ray diffraction and related image processing methods. The size of γ’ precipitates and the precipitation amount of topologically close-packed increased with the increase in thermal exposure time, and coarsening of the γ’ precipitates led to the simultaneous increase of the matrix channel width. The relationship between the creep rupture life and the lattice misfit of γ/γ’, the coarsening of γ’ precipitate and the precipitation of TCP phase are systematically discussed. In addition, according to the correlation between γ’ phase evolution and creep characteristics during thermal exposure, a physical model is established to predict the remaining creep life.

Coarsening behavior of the Ti2Cu phase of a Ti-14Cu alloy during isothermal thermal exposure

2021 ◽  
pp. 160685
Author(s):  
Chaoping Jiang ◽  
Lixiang Zhang ◽  
Yongnan Chen ◽  
Qinyang Zhao ◽  
Yiku Xu ◽  
...  
Keyword(s):  
Thermal Exposure ◽  
Coarsening Behavior

scholarly journals Cooper Pair-Like Systems at High Temperature and their Role on Fluctuations Near the Critical Temperature

1998 ◽  
Vol 12 (29n31) ◽  
pp. 3216-3219 ◽  
Author(s):  
M. Ausloos ◽  
S. Dorbolo
Keyword(s):  
Phase Transition ◽  
Electrical Resistivity ◽  
High Temperature ◽  
Critical Temperature ◽  
Oxygen Diffusion ◽  
Cooper Pair ◽  
Anomalous Behavior ◽  
Anomalous Effect ◽  
Linear Temperature ◽  
Ybco Sample

A logarithmic behavior is hidden in the linear temperature regime of the electrical resistivity R(T) of some YBCO sample below 2T c where "pairs" break apart, fluctuations occur and "a gap is opening". An anomalous effect also occurs near 200 K in the normal state Hall coefficient. In a simulation of oxygen diffusion in planar 123 YBCO, an anomalous behavior is found in the oxygen-vacancy motion near such a temperature. We claim that the behavior of the specific heat above and near the critical temperature should be reexamined in order to show the influence and implications of fluctuations and dimensionality on the nature of the phase transition and on the true onset temperature.

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