Misorientation Dependence Grain Boundary Complexions in Al Alloy Thin Films

2019 ◽  
Author(s):  
Prakash Parajuli ◽  
David Romeu ◽  
Viwanou Hounkpati ◽  
Rubén Mendoza-Cruz ◽  
Miguel José Yacamán ◽  
...  
Keyword(s):  
Thin Films ◽  
Grain Boundary ◽  
Al Alloy ◽  
Grain Boundary Complexions

The Effect of Cu Alloying on Al Alloy Thin Films: Microstructural Mechanisms That Enhance Electromigration Resistance

1993 ◽  
Vol 309 ◽  
Author(s):  
D. R. Frear ◽  
J. R. Michael ◽  
A. D. Romig
Keyword(s):  
Thin Films ◽  
Grain Boundary ◽  
Grain Boundaries ◽  
Room Temperature ◽  
Boundary Diffusion ◽  
Boundary Phase ◽  
Al Alloy ◽  
Cu Films ◽  
Isothermal Heat Treatments ◽  
Lower Temperature

AbstractThe microstructural evolution of unpatterned Al-2wt.%Cu thin films has been examined to elucidate the mechanism by which copper improves electromigration resistance. After annealing at 425°C and cooling to room temperature at a rate of approximately 1°C/min., the microstructure of the Al-Cu films consisted of 1 μm aluminum grains with θ-phase Al2Cu precipitates at grain boundaries and triple points. The grain size and precipitation distribution did not change with subsequent isothermal heat treatments in the temperature range of 200° to 400°C. Al-Cu thin films annealed at 400°C, a temperature just below the Al/Al+θ solvus, exhibited microstructures in which the aluminum grain boundaries were depleted in copper except for the presence of the pre-existing large, widely dispersed AI2Cu precipitates. Al-Cu thin films annealed at 200° to 300°C were enriched with copper at the aluminum grain boundaries. The large, widely dispersed Al2Cu precipitates remained after the lower temperature anneals. From these results, it is proposed that the presence of copper in aluminum thin films improves electromigration resistance due to the precipitation of a thin film of Al2Cu, or a substoichiometric precursor, along the grain boundaries. The grain boundary phase retards grain boundary diffusion in the thin films, thereby reducing total mass transport and improving electromigration resistance.

Correlation of grain boundary nature with magnetization in RF-sputtered lithium–zinc ferrite thin films

2009 ◽  
Vol 321 (20) ◽  
pp. 3373-3379 ◽  
Author(s):  
Lakshmikanta Aditya ◽  
J. Nanda ◽  
I. Samajdar ◽  
N. Venkataramani ◽  
Shiva Prasad
Keyword(s):  
Thin Films ◽  
Grain Boundary ◽  
Zinc Ferrite ◽  
Ferrite Thin Films

A HYBRID MODEL ON HYSTERESIS LOOP AND COERCIVITY IN NANOSTRUCTURED PERMANENT MAGNETS

2006 ◽  
Vol 05 (04n05) ◽  
pp. 627-631 ◽  
Author(s):  
M. J. SUN ◽  
G. P. ZHAO ◽  
J. LIANG ◽  
G. ZHOU ◽  
H. S. LIM ◽  
...  
Keyword(s):  
Thin Films ◽  
Domain Wall ◽  
Grain Boundary ◽  
Magnetic Moment ◽  
Permanent Magnets ◽  
Hysteresis Loops ◽  
Bulk Materials ◽  
Rotational Model ◽  
Moment Distribution ◽  
Coercivity Mechanism

A simplified micromagnetic model has been proposed to calculate the hysteresis loops of nanostructured permanent magnets for various configurations, including thin films, exchange-coupled double-layer systems and bulk materials. The reversal part of the hysteresis is based on the Stoner–Wohlfarth coherent rotational model and the coercivity mechanism is due mainly to the motion of the transition region (a domain wall like magnetic moment distribution in the grain boundary). The elements of nucleation and pinning models are also incorporated.

Large modulation of carrier transport by grain-boundary molecular packing and microstructure in organic thin films

2009 ◽  
Vol 8 (12) ◽  
pp. 952-958 ◽  
Author(s):  
Jonathan Rivnay ◽  
Leslie H. Jimison ◽  
John E. Northrup ◽  
Michael F. Toney ◽  
Rodrigo Noriega ◽  
...  
Keyword(s):  
Thin Films ◽  
Grain Boundary ◽  
Carrier Transport ◽  
Organic Thin Films ◽  
Molecular Packing

Creep characterization of Al alloy thin films for use in MEMS applications

2004 ◽  
Vol 76 (1-4) ◽  
pp. 272-278 ◽  
Author(s):  
R. Modlinski ◽  
A. Witvrouw ◽  
P. Ratchev ◽  
R. Puers ◽  
J.M.J. den Toonder ◽  
...  
Keyword(s):  
Thin Films ◽  
Al Alloy

scholarly journals Local built-in potential on grain boundary of Cu(In,Ga)Se2 thin films

2004 ◽  
Vol 84 (18) ◽  
pp. 3477-3479 ◽  
Author(s):  
C.-S. Jiang ◽  
R. Noufi ◽  
J. A. AbuShama ◽  
K. Ramanathan ◽  
H. R. Moutinho ◽  
...  
Keyword(s):  
Thin Films ◽  
Grain Boundary
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