scholarly journals Local built-in potential on grain boundary of Cu(In,Ga)Se2 thin films

2004 ◽  
Vol 84 (18) ◽  
pp. 3477-3479 ◽  
Author(s):  
C.-S. Jiang ◽  
R. Noufi ◽  
J. A. AbuShama ◽  
K. Ramanathan ◽  
H. R. Moutinho ◽  
...  
Keyword(s):  
Thin Films ◽  
Grain Boundary

Correlation of grain boundary nature with magnetization in RF-sputtered lithium–zinc ferrite thin films

2009 ◽  
Vol 321 (20) ◽  
pp. 3373-3379 ◽  
Author(s):  
Lakshmikanta Aditya ◽  
J. Nanda ◽  
I. Samajdar ◽  
N. Venkataramani ◽  
Shiva Prasad
Keyword(s):  
Thin Films ◽  
Grain Boundary ◽  
Zinc Ferrite ◽  
Ferrite Thin Films

A HYBRID MODEL ON HYSTERESIS LOOP AND COERCIVITY IN NANOSTRUCTURED PERMANENT MAGNETS

2006 ◽  
Vol 05 (04n05) ◽  
pp. 627-631 ◽  
Author(s):  
M. J. SUN ◽  
G. P. ZHAO ◽  
J. LIANG ◽  
G. ZHOU ◽  
H. S. LIM ◽  
...  
Keyword(s):  
Thin Films ◽  
Domain Wall ◽  
Grain Boundary ◽  
Magnetic Moment ◽  
Permanent Magnets ◽  
Hysteresis Loops ◽  
Bulk Materials ◽  
Rotational Model ◽  
Moment Distribution ◽  
Coercivity Mechanism

A simplified micromagnetic model has been proposed to calculate the hysteresis loops of nanostructured permanent magnets for various configurations, including thin films, exchange-coupled double-layer systems and bulk materials. The reversal part of the hysteresis is based on the Stoner–Wohlfarth coherent rotational model and the coercivity mechanism is due mainly to the motion of the transition region (a domain wall like magnetic moment distribution in the grain boundary). The elements of nucleation and pinning models are also incorporated.

Large modulation of carrier transport by grain-boundary molecular packing and microstructure in organic thin films

2009 ◽  
Vol 8 (12) ◽  
pp. 952-958 ◽  
Author(s):  
Jonathan Rivnay ◽  
Leslie H. Jimison ◽  
John E. Northrup ◽  
Michael F. Toney ◽  
Rodrigo Noriega ◽  
...  
Keyword(s):  
Thin Films ◽  
Grain Boundary ◽  
Carrier Transport ◽  
Organic Thin Films ◽  
Molecular Packing

scholarly journals Synthesis of high-entropy alloy thin films via grain boundary diffusion–assisted solid-state alloying

2022 ◽  
Vol 207 ◽  
pp. 114302
Author(s):  
Seungjin Nam ◽  
Sang Jun Kim ◽  
Moon J. Kim ◽  
Manuel Quevedo-Lopez ◽  
Jun Yeon Hwang ◽  
...  
Keyword(s):  
Thin Films ◽  
Solid State ◽  
Grain Boundary ◽  
Boundary Diffusion ◽  
Grain Boundary Diffusion ◽  
High Entropy Alloy ◽  
High Entropy

Atomistic and Continuum Studies of Diffusional Creep and Associated Dislocation Mechanisms in thin Films on Substrates

2003 ◽  
Vol 779 ◽  
Author(s):  
Markus J. Buehler ◽  
Alexander Hartmaier ◽  
Huajian Gao
Keyword(s):  
Thin Films ◽  
Stress Field ◽  
Grain Boundary ◽  
Large Scale ◽  
Strain Relaxation ◽  
Dislocation Dynamics ◽  
Biaxial Stress ◽  
Diffusional Creep ◽  
Material Transport ◽  
Dynamics Simulations

AbstractMotivated by recent theoretical and experimental progress, large-scale atomistic simulations are performed to study plastic deformation in sub-micron thin films. The studies reveal that stresses are relaxed by material transport from the surface into the grain boundary. This leads to the formation of a novel defect identified as diffusion wedge. Eventually, a crack-like stress field develops because the tractions along the grain boundary relax, but the adhesion of the film to the substrate prohibits strain relaxation close to the interface. This causes nucleation of unexpected parallel glide dislocations at the grain boundary-substrate interface, for which no driving force exists in the overall biaxial stress field. The observation of parallel glide dislocations in molecular dynamics studies closes the theory-experiment-simulation linkage. In this study, we also compare the nucleation of dislocations from a diffusion wedge with nucleation from a crack. Further, we present preliminary results of modeling constrained diffusional creep using discrete dislocation dynamics simulations.

Observation of the enhanced tunnel current of NiO thin films in grain boundary by peakforce TUNA

2019 ◽  
Vol 36 (4) ◽  
pp. 160-164
Author(s):  
Yidong Zhang
Keyword(s):  
Thin Films ◽  
Grain Boundary ◽  
Adhesion Force ◽  
Electronic Conductivity ◽  
Tunnel Current ◽  
Band Bending ◽  
Content Type ◽  
Atomic Force ◽  
Tunnel Model ◽  
Nio Thin Film

Purpose The purpose of this paper is to investigate the nanoscale electric performance of NiO thin films in grain boundary and grain face. Design/methodology/approach PeakForce tunnel atomic force is applied to visualize the nanoscale current imaging of the NiO thin film on fluorine tin oxide substrate. Findings The results show that the grain boundary has a significant impact on the nanoscale current of the NiO film. The electronic conductivity and in grain boundary is higher than that of the NiO film in grain face. The width of the conductive zone in the NiO film over grain boundaries is ∼ 60 nm. The tunnel current between the tip and the NiO film is consistent with the Fowler–Nordheim tunnel model. Originality/value The higher tunnel current in grain boundary is probably attributed to the enhanced energy band bending and adhesion force.

Sign in / Sign up

Export Citation Format

Share Document