Spectroscopic characterization of transition metal impurities in natural montebrasite/amblygonite

2010 ◽  
Vol 96 (1) ◽  
pp. 42-52 ◽  
Author(s):  
L. N. Dias ◽  
M. V. B. Pinheiro ◽  
R. L. Moreira ◽  
K. Krambrock ◽  
K. J. Guedes ◽  
...  
Keyword(s):  
Transition Metal ◽  
Spectroscopic Characterization ◽  
Metal Impurities ◽  
Transition Metal Impurities

Characterization of Defects in N-Type 6H-SiC Single Crystals by Optical Admittance Spectroscopy

1994 ◽  
Vol 339 ◽  
Author(s):  
A. O. Evwaraye ◽  
S. R. Smith ◽  
W. C. Mitchel
Keyword(s):  
Transition Metal ◽  
Single Crystals ◽  
Admittance Spectroscopy ◽  
Donor Atom ◽  
Deep Defect ◽  
Metal Impurities ◽  
Transition Metal Impurities ◽  
Defect Levels ◽  
Type Conduction

ABSTRACTOptical admittance spectroscopy is a technique for measuring the conductance and capacitance of a junction under illumination as a function of the wavelength of the light and the frequency of the measuring AC signal. This technique has been applied to characterize deep defect levels in 6H-SiC:N. Nitrogen is a donor atom in 6H-SiC which substitutes for carbon in three inequivalent sites (h, k1, k2). giving rise to n-type conduction. Deep defect levels attributable to transition metal impurities have also been identified in 6H-SiC:N. We have examined persistent photoconductance in this material by optical admittance spectroscopy.

Transition-Metal Impurity Luminescence in GaAs and its Application to Material Characterization

1995 ◽  
Vol 378 ◽  
Author(s):  
T. Nishino
Keyword(s):  
Transition Metal ◽  
Near Infrared ◽  
Energy Levels ◽  
Local Strain ◽  
Infrared Region ◽  
Luminescence Line ◽  
Metal Impurities ◽  
Transition Metal Impurity ◽  
Transition Metal Impurities

AbstractA number of sharp characteristic luminescence lines has been observed for GaAs doped with 3d transition-metal impurities in the near-infrared region, the origin being attributed to the zero-phonon intracenter transitions between the energy levels of the metal ions split by the crystal field of the GaAs lattice. It is also known that these luminescence lines are very sensitive to the surrounding field of the transition-metal impurities. The luminescence of Cr-doped GaAs has been most extensively studied, the spectrum revealing a very sharp luminescence line at 0.839 eV. In this paper we review the results on the successful applications of this Cr-related luminescence line to characterization of in-depth profiles of arsenic vacancy in thermally annealed GaAs, local strain field in In-doped GaAs and interface stress at heterostructures grown on Cr-doped GaAs substrate.

Electrical and optical properties of p-GaN films implanted with transition metal impurities

2005 ◽  
Vol 2 (7) ◽  
pp. 2520-2524 ◽  
Author(s):  
A.Y. Polyakov ◽  
N.B. Smirnov ◽  
A.V. Govorkov ◽  
Rohit Khanna ◽  
S.J. Pearton
Keyword(s):  
Optical Properties ◽  
Transition Metal ◽  
Electrical And Optical Properties ◽  
Metal Impurities ◽  
Transition Metal Impurities

Diffusion of transition-metal impurities in silicon

2007 ◽  
Vol 401-402 ◽  
pp. 151-154 ◽  
Author(s):  
K. Matsukawa ◽  
K. Shirai ◽  
H. Yamaguchi ◽  
H. Katayama-Yoshida
Keyword(s):  
Transition Metal ◽  
Metal Impurities ◽  
Transition Metal Impurities
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