Gettering of transition metal impurities during phosphorus emitter diffusion in multicrystalline silicon solar cell processing

2006 ◽  
Vol 99 (9) ◽  
pp. 093509 ◽  
Author(s):  
A. Bentzen ◽  
A. Holt ◽  
R. Kopecek ◽  
G. Stokkan ◽  
J. S. Christensen ◽  
...  
Keyword(s):  
Solar Cell ◽  
Transition Metal ◽  
Silicon Solar Cell ◽  
Multicrystalline Silicon ◽  
Cell Processing ◽  
Metal Impurities ◽  
Transition Metal Impurities

Role of metal impurities in multicrystalline silicon solar cell degradation

2021 ◽  
Vol 14 (11) ◽  
pp. 115502
Author(s):  
Zechen Hu ◽  
Dehang Lin ◽  
Xuegong Yu ◽  
Christoph Seiffert ◽  
Andrej Kuznetsov ◽  
...  
Keyword(s):  
Solar Cell ◽  
Silicon Solar Cell ◽  
Multicrystalline Silicon ◽  
Metal Impurities

First-Principles Calculations on Σ3 Grain Boundary Transition Metal Impurities in Multicrystalline Silicon

2010 ◽  
Vol 49 (4) ◽  
pp. 04DP02 ◽  
Author(s):  
Ambigapathy Suvitha ◽  
Natarajan Sathiyamoorthy Venkataramanan ◽  
Ryoji Sahara ◽  
Hiroshi Mizuseki ◽  
Yoshiyuki Kawazoe
Keyword(s):  
Transition Metal ◽  
Grain Boundary ◽  
First Principles ◽  
Multicrystalline Silicon ◽  
First Principles Calculations ◽  
Metal Impurities ◽  
Transition Metal Impurities

scholarly journals Interactions Of Structural Defects With Metallic Impurities In Multicrystalline Silicon

1996 ◽  
Vol 442 ◽  
Author(s):  
S. A. McHugo ◽  
H. Hieslmair ◽  
E. R. Weber ◽  
M. D. Rosenblum ◽  
J. P. Kalejs
Keyword(s):  
Solar Cell ◽  
Multicrystalline Silicon ◽  
Structural Defects ◽  
Device Performance ◽  
X Ray ◽  
Cell Processing ◽  
Metal Impurities ◽  
Fluorescence Measurements ◽  
Incomplete Removal ◽  
Metallic Impurities

AbstractInteractions between structural defects and metallic impurities were studied in multicrystalline silicon for solar cell applications. The objective was to gain insight into the relationship between solar cell processing, metallic impurity behavior and the resultant effect on material/device performance. With an intense synchrotron x-ray source, high sensitivity x-ray fluorescence measurements were utilized to determine impurity distributions with a spatial resolution of ≈ lμm. Diffusion length mapping and final solar cell characteristics gauged material/device performance. The materials were tested in both the as-grown state and after full solar cell processing. Iron and nickel metal impurities were located at structural defects in asgrown material, while after solar cell processing, both impurities were still observed in low performance regions. These results indicate that multicrystalline silicon solar cell performance is directly related to metal impurities which are not completely removed during typical processing treatments. A discussion of possible mechanisms for this incomplete removal is presented.

scholarly journals Nano-XRF Analysis of Metal Impurities Distribution at PL Active Grain Boundaries During mc-Silicon Solar Cell Processing

2017 ◽  
Vol 7 (1) ◽  
pp. 244-249 ◽  
Author(s):  
Simone Bernardini ◽  
Steve Johnston ◽  
Bradley West ◽  
Tine U. Naerland ◽  
Michael Stuckelberger ◽  
...  
Keyword(s):  
Solar Cell ◽  
Grain Boundaries ◽  
Silicon Solar Cell ◽  
Cell Processing ◽  
Xrf Analysis ◽  
Metal Impurities
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