Atomic structure and formation mechanism of (301) rutile twins from Diamantina (Brazil)

2007 ◽  
Vol 92 (11-12) ◽  
pp. 1789-1799 ◽  
Author(s):  
N. Daneu ◽  
H. Schmid ◽  
A. Recnik ◽  
W. Mader
Keyword(s):  
Formation Mechanism ◽  
Atomic Structure

Atomic structure and formation mechanism of (101) rutile twins from Diamantina (Brazil)

2014 ◽  
Vol 99 (4) ◽  
pp. 612-624 ◽  
Author(s):  
N. Daneu ◽  
A. Re nik ◽  
W. Mader
Keyword(s):  
Formation Mechanism ◽  
Atomic Structure

scholarly journals Atomic structure and formation mechanism of sub-nanometer pores in 2D monolayer MoS2

Nanoscale ◽  
2017 ◽  
Vol 9 (19) ◽  
pp. 6417-6426 ◽  
Author(s):  
Shanshan Wang ◽  
Huashan Li ◽  
Hidetaka Sawada ◽  
Christopher S. Allen ◽  
Angus I. Kirkland ◽  
...  
Keyword(s):  
Formation Mechanism ◽  
Atomic Structure ◽  
Monolayer Mos2

The Commensurate Phase of Al Overlayers on the Si(111) Surfaces: STM Study of the γ-Phase Surface

1993 ◽  
Vol 317 ◽  
Author(s):  
M. Yoshimura ◽  
K. Takaoka ◽  
T. Yao
Keyword(s):  
Scanning Tunneling Microscopy ◽  
Formation Mechanism ◽  
Atomic Structure ◽  
Area Ratio ◽  
Stacking Fault ◽  
Scanning Tunneling ◽  
Tunneling Microscopy ◽  
Commensurate Phase ◽  
Phase Surface ◽  
Good Agreement

ABSTRACTWe have elucidated the atomic structure of the γ-phase, which appears at 1ML coverage of Al on the Si (111) surface, using scanning tunneling Microscopy (STM). The structure is based on the 9×9 dimer-adatom-stacking fault (DAS) structure. Al atoms replace Si atoms in the second layer of the DAS Model. As a result, excess silicon atoms are produced during the formation of the γ-phase and migrate on the surface to form Monatomic-height islands. The area ratio of the upper and lower terraces is in good agreement with the proposed formation Mechanism.

Microdomain atomic structure of Zr50Pd40Al10 metallic glasses and its formation mechanism

2019 ◽  
Vol 35 (3) ◽  
pp. 248-253 ◽  
Author(s):  
Kai Li ◽  
Fangliang Gao ◽  
Yu-Jen Chou ◽  
Kaixiang Shen ◽  
Guoqiang Li
Keyword(s):  
Formation Mechanism ◽  
Metallic Glasses ◽  
Atomic Structure

Atomic structure and formation mechanism of identically sized Au clusters grown on Si(111)-(7×7) surface

2010 ◽  
Vol 133 (12) ◽  
pp. 124706 ◽  
Author(s):  
Yaping Wu ◽  
Yinghui Zhou ◽  
Changjie Zhou ◽  
Huahan Zhan ◽  
Junyong Kang
Keyword(s):  
Formation Mechanism ◽  
Atomic Structure ◽  
Au Clusters

Radiation-induced surface decomposition

1983 ◽  
Vol 41 ◽  
pp. 368-369
Author(s):  
M. L. Knotek
Keyword(s):  
Ionizing Radiation ◽  
Atomic Structure ◽  
Chemical Bonding ◽  
Neutral Species ◽  
Radiation Induced ◽  
Physical And Chemical ◽  
Surface Decomposition ◽  
The Relationship ◽  
Electron And Photon ◽  
Surface Bond

Modern surface analysis is based largely upon the use of ionizing radiation to probe the electronic and atomic structure of the surfaces physical and chemical makeup. In many of these studies the ionizing radiation used as the primary probe is found to induce changes in the structure and makeup of the surface, especially when electrons are employed. A number of techniques employ the phenomenon of radiation induced desorption as a means of probing the nature of the surface bond. These include Electron- and Photon-Stimulated Desorption (ESD and PSD) which measure desorbed ionic and neutral species as they leave the surface after the surface has been excited by some incident ionizing particle. There has recently been a great deal of activity in determining the relationship between the nature of chemical bonding and its susceptibility to radiation damage.

Simulated Dark-Field Electron Micrographs of Point Defects and Organometallics

1975 ◽  
Vol 33 ◽  
pp. 200-201
Author(s):  
William Krakow
Keyword(s):  
Electron Micrographs ◽  
Point Defects ◽  
Structure Determination ◽  
Atomic Structure ◽  
Image Interpretation ◽  
Dark Field ◽  
Field Electron ◽  
Dark Field Microscopy ◽  
Dark Field Electron

Tilted beam dark-field microscopy has been applied to atomic structure determination in perfect crystals, several synthesized molecules with heavy atcm markers and in the study of displaced atoms in crystals. Interpretation of this information in terms of atom positions and atom correlations is not straightforward. Therefore, calculated dark-field images can be an invaluable aid in image interpretation.

Surface reconstructions of (001) cleaved GdBa2Cu3O7-δ

1992 ◽  
Vol 50 (1) ◽  
pp. 106-107
Author(s):  
H.W. Zandbergen ◽  
M.R. McCartney
Keyword(s):  
Electron Microscopy ◽  
Copper Oxide ◽  
Grain Boundaries ◽  
Atomic Structure ◽  
Oxygen Deficiency ◽  
Surface Layers ◽  
Layer Sequence ◽  
Surface Reconstructions ◽  
Good Agreement

Very few electron microscopy papers have been published on the atomic structure of the copper oxide based superconductor surfaces. Zandbergen et al. have reported that the surface of YBa2Cu3O7-δ was such that the terminating layer sequence is bulk-Y-CuO2-BaO-CuO-BaO, whereas the interruption at the grain boundaries is bulk-Y-CuO2-BaO-CuO. Bursill et al. reported that HREM images of the termination at the surface are in good agreement with calculated images with the same layer sequence as observed by Zandbergen et al. but with some oxygen deficiency in the two surface layers. In both studies only one or a few surfaces were studied.

High-resolution electron microscopy of the atomic structure of some grain boundaries in Au

1986 ◽  
Vol 44 ◽  
pp. 414-415
Author(s):  
W. Krakow ◽  
D. A. Smith
Keyword(s):  
Atomic Structure ◽  
High Resolution Electron Microscopy ◽  
Image Features ◽  
Image Feature ◽  
Resolution Electron ◽  
Tilt Boundaries ◽  
Processing Techniques ◽  
Atom Position ◽  
Structure Configuration

The successful determination of the atomic structure of [110] tilt boundaries in Au stems from the investigation of microscope performance at intermediate accelerating voltages (200 and 400kV) as well as a detailed understanding of how grain boundary image features depend on dynamical diffraction processes variation with specimen and beam orientations. This success is also facilitated by improving image quality by digital image processing techniques to the point where a structure image is obtained and each atom position is represented by a resolved image feature. Figure 1 shows an example of a low angle (∼10°) Σ = 129/[110] tilt boundary in a ∼250Å Au film, taken under tilted beam brightfield imaging conditions, to illustrate the steps necessary to obtain the atomic structure configuration from the image. The original image of Fig. 1a shows the regular arrangement of strain-field images associated with the cores of ½ [10] primary dislocations which are separated by ∼15Å.

Atomic structure imaging of the Si/SiO2 interface with high-resolution electron microscopy

1986 ◽  
Vol 44 ◽  
pp. 390-391
Author(s):  
J.L. Batstone ◽  
J.M. Gibson ◽  
Alice.E. White ◽  
K.T. Short
Keyword(s):  
Electron Microscopy ◽  
High Resolution ◽  
Atomic Structure ◽  
High Resolution Electron Microscopy ◽  
Medium Voltage ◽  
Voltage Electron ◽  
Resolution Electron ◽  
Structural Image ◽  
Electron Microscopes ◽  
Point To Point

High resolution electron microscopy (HREM) is a powerful tool for the determination of interface atomic structure. With the previous generation of HREM's of point-to-point resolution (rpp) >2.5Å, imaging of semiconductors in only <110> directions was possible. Useful imaging of other important zone axes became available with the advent of high voltage, high resolution microscopes with rpp <1.8Å, leading to a study of the NiSi2 interface. More recently, it was shown that images in <100>, <111> and <112> directions are easily obtainable from Si in the new medium voltage electron microscopes. We report here the examination of the important Si/Si02 interface with the use of a JEOL 4000EX HREM with rpp <1.8Å, in a <100> orientation. This represents a true structural image of this interface.

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