The Commensurate Phase of Al Overlayers on the Si(111) Surfaces: STM Study of the γ-Phase Surface

1993 ◽  
Vol 317 ◽  
Author(s):  
M. Yoshimura ◽  
K. Takaoka ◽  
T. Yao
Keyword(s):  
Scanning Tunneling Microscopy ◽  
Formation Mechanism ◽  
Atomic Structure ◽  
Area Ratio ◽  
Stacking Fault ◽  
Scanning Tunneling ◽  
Tunneling Microscopy ◽  
Commensurate Phase ◽  
Phase Surface ◽  
Good Agreement

ABSTRACTWe have elucidated the atomic structure of the γ-phase, which appears at 1ML coverage of Al on the Si (111) surface, using scanning tunneling Microscopy (STM). The structure is based on the 9×9 dimer-adatom-stacking fault (DAS) structure. Al atoms replace Si atoms in the second layer of the DAS Model. As a result, excess silicon atoms are produced during the formation of the γ-phase and migrate on the surface to form Monatomic-height islands. The area ratio of the upper and lower terraces is in good agreement with the proposed formation Mechanism.

Direct Imaging Using Scanning Tunneling Microscopy of the Atomic Structure in Amorphous Co1-xPx

1992 ◽  
pp. 348-355
Author(s):  
J. M. Gonzalez ◽  
F. Cebollada ◽  
M. Vazquez ◽  
M. Aguilar ◽  
M. Pancorbo ◽  
...  
Keyword(s):  
Scanning Tunneling Microscopy ◽  
Atomic Structure ◽  
Scanning Tunneling ◽  
Tunneling Microscopy ◽  
Direct Imaging

Atomic structure of tip apex for spin-polarized scanning tunneling microscopy

2011 ◽  
Vol 98 (8) ◽  
pp. 082505 ◽  
Author(s):  
G. Rodary ◽  
J.-C. Girard ◽  
L. Largeau ◽  
C. David ◽  
O. Mauguin ◽  
...  
Keyword(s):  
Scanning Tunneling Microscopy ◽  
Atomic Structure ◽  
Scanning Tunneling ◽  
Tunneling Microscopy ◽  
Spin Polarized

Atomic Structure of Si(553) Surface Revealed by Scanning Tunneling Microscopy

2008 ◽  
Vol 47 (7) ◽  
pp. 6102-6104 ◽  
Author(s):  
Shinsuke Hara ◽  
Masamichi Yoshimura ◽  
Kazuyuki Ueda
Keyword(s):  
Scanning Tunneling Microscopy ◽  
Atomic Structure ◽  
Scanning Tunneling ◽  
Tunneling Microscopy

Atomic Structure of the Domain Walls of the Discommensurate Phases in Ge(111)/Ga

1998 ◽  
Vol 05 (01) ◽  
pp. 175-179 ◽  
Author(s):  
Zheng Gai ◽  
Bo Gao ◽  
Hang Ji ◽  
R. G. Zhao ◽  
W. S. Yang
Keyword(s):  
Domain Wall ◽  
Scanning Tunneling Microscopy ◽  
Atomic Structure ◽  
Domain Walls ◽  
Scanning Tunneling ◽  
Wall Structure ◽  
Tunneling Microscopy ◽  
Domain Wall Structure ◽  
Stm Images

We have studied the γ and β discommensurate phases of the Ge(111)/Ga system with scanning tunneling microscopy (STM). On the basis of the features of these phases known from our STM images as well as from previous papers, models of domain-wall structure of both phases have been proposed for further investigations.

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