Development of Mid-infrared GeSn Light Emitting Diodes on a Silicon Substrate

2015 ◽  
Author(s):  
Hung H. Cheng ◽  
G. Sun ◽  
R. S. Soref
Keyword(s):  
Silicon Substrate ◽  
Light Emitting Diodes ◽  
Mid Infrared ◽  
Light Emitting

scholarly journals High-Power GaN-Based Vertical Light-Emitting Diodes on 4-Inch Silicon Substrate

Nanomaterials ◽  
2019 ◽  
Vol 9 (8) ◽  
pp. 1178 ◽  
Author(s):  
Qiang Zhao ◽  
Jiahao Miao ◽  
Shengjun Zhou ◽  
Chengqun Gui ◽  
Bin Tang ◽  
...  
Keyword(s):  
High Power ◽  
Silicon Substrate ◽  
Flip Chip ◽  
Heat Dissipation ◽  
Light Emitting Diodes ◽  
Light Output ◽  
Current Spreading ◽  
Light Emitting ◽  
Fabry Perot ◽  
Lift Off

We demonstrate high-power GaN-based vertical light-emitting diodes (LEDs) (VLEDs) on a 4-inch silicon substrate and flip-chip LEDs on a sapphire substrate. The GaN-based VLEDs were transferred onto the silicon substrate by using the Au–In eutectic bonding technique in combination with the laser lift-off (LLO) process. The silicon substrate with high thermal conductivity can provide a satisfactory path for heat dissipation of VLEDs. The nitrogen polar n-GaN surface was textured by KOH solution, which not only improved light extract efficiency (LEE) but also broke down Fabry–Pérot interference in VLEDs. As a result, a near Lambertian emission pattern was obtained in a VLED. To improve current spreading, the ring-shaped n-electrode was uniformly distributed over the entire VLED. Our combined numerical and experimental results revealed that the VLED exhibited superior heat dissipation and current spreading performance over a flip-chip LED (FCLED). As a result, under 350 mA injection current, the forward voltage of the VLED was 0.36 V lower than that of the FCLED, while the light output power (LOP) of the VLED was 3.7% higher than that of the FCLED. The LOP of the FCLED saturated at 1280 mA, but the light output saturation did not appear in the VLED.

Room temperature thermo-electric pumping in mid-infrared light-emitting diodes

2013 ◽  
Vol 103 (18) ◽  
pp. 183513 ◽  
Author(s):  
Parthiban Santhanam ◽  
Duanni Huang ◽  
Rajeev J. Ram ◽  
Maxim A. Remennyi ◽  
Boris A. Matveev
Keyword(s):  
Room Temperature ◽  
Light Emitting Diodes ◽  
Infrared Light ◽  
Thermo Electric ◽  
Mid Infrared ◽  
Light Emitting

Cascading, efficiency, and broadband emission in mid-infrared Superlattice Light Emitting Diodes (SLEDs)

2017 ◽  
Author(s):  
J. P. Prineas ◽  
R. J. Ricker ◽  
A. Muhowski ◽  
C. Bogh ◽  
S. Provence ◽  
...  
Keyword(s):  
Light Emitting Diodes ◽  
Mid Infrared ◽  
Light Emitting ◽  
Broadband Emission

scholarly journals High-pressure measurements of mid-infrared electroluminescence from InAs light-emitting diodes at 3.3 μm

2003 ◽  
Vol 82 (8) ◽  
pp. 1149-1151 ◽  
Author(s):  
S. A. Choulis ◽  
A. Andreev ◽  
M. Merrick ◽  
A. R. Adams ◽  
B. N. Murdin ◽  
...  
Keyword(s):  
High Pressure ◽  
Light Emitting Diodes ◽  
Pressure Measurements ◽  
Mid Infrared ◽  
Light Emitting

Pentenary GaInAsPSb for mid-infrared light-emitting diodes and lasers grown by liquid phase epitaxy

2007 ◽  
Author(s):  
V. M. Smirnov ◽  
P. J. Batty ◽  
A. Krier ◽  
R. Jones ◽  
V. I. Vasil'ev ◽  
...  
Keyword(s):  
Liquid Phase ◽  
Liquid Phase Epitaxy ◽  
Light Emitting Diodes ◽  
Infrared Light ◽  
Mid Infrared ◽  
Light Emitting

High power cascaded mid-infrared InAs/GaSb light emitting diodes on mismatched GaAs

2015 ◽  
Vol 118 (12) ◽  
pp. 123108 ◽  
Author(s):  
S. R. Provence ◽  
R. Ricker ◽  
Y. Aytac ◽  
T. F. Boggess ◽  
J. P. Prineas
Keyword(s):  
High Power ◽  
Light Emitting Diodes ◽  
Mid Infrared ◽  
Light Emitting
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