MWIR Lasers Using Type II Quantum Well Active Regions on InP Substrates

Design analysis of 1550-nm gaassb-(in)gaasn type-II quantum-well laser active regions

IEEE Journal of Quantum Electronics ◽

10.1109/jqe.2003.817235 ◽

2003 ◽

Vol 39 (10) ◽

pp. 1205-1210 ◽

Cited By ~ 34

Author(s):

N. Tansu ◽

L.J. Mawst

Keyword(s):

Quantum Well ◽

Active Regions ◽

Design Analysis ◽

Type Ii ◽

Quantum Well Laser

Download Full-text

2.86 µm room-temperature light emission of InGaAsN/GaAsSb type-II quantum well diodes grown on InP substrates

Japanese Journal of Applied Physics ◽

10.7567/jjap.53.028004 ◽

2014 ◽

Vol 53 (2) ◽

pp. 028004 ◽

Cited By ~ 7

Author(s):

Yuichi Kawamura ◽

Toru Sahashi

Keyword(s):

Quantum Well ◽

Room Temperature ◽

Light Emission ◽

Type Ii ◽

Inp Substrates

Download Full-text

Annealing effects on the electroluminescence of InGaAsN/GaAsSb type-II quantum well diodes grown on InP substrates

2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS) ◽

10.1109/iciprm.2016.7528565 ◽

2016 ◽

Author(s):

Yuichi Kawamura ◽

Ikuya Shishido ◽

Sho Tanaka ◽

Shuichi Kawamata

Keyword(s):

Quantum Well ◽

Type Ii ◽

Annealing Effects ◽

Inp Substrates

Download Full-text

Properties of In0.53Ga0.47As/GaAs0.5Sb0.5 type II multiple quantum well structures grown on (111)B InP substrates by molecular beam epitaxy

Journal of Crystal Growth ◽

10.1016/s0022-0248(02)01436-7 ◽

2002 ◽

Vol 243 (1) ◽

pp. 8-12

Author(s):

T Higashino ◽

Y Kawamura ◽

M Fujimoto ◽

M Amano ◽

T Yokoyama ◽

...

Keyword(s):

Molecular Beam Epitaxy ◽

Quantum Well ◽

Molecular Beam ◽

Multiple Quantum Well ◽

Multiple Quantum ◽

Type Ii ◽

Quantum Well Structures ◽

Inp Substrates

Download Full-text

Annealing effects on the properties of InGaAsN/GaAsSb type-II quantum well diodes grown on InP substrates

physica status solidi (a) ◽

10.1002/pssa.201600510 ◽

2016 ◽

Vol 214 (3) ◽

pp. 1600510

Author(s):

Y. Kawamura ◽

I. Shishido ◽

S. Tanaka ◽

S. Kawamata

Keyword(s):

Quantum Well ◽

Type Ii ◽

Annealing Effects ◽

Inp Substrates

Download Full-text

Type-I and type-II interband transitions in CdSe/ZnTe quantum well structures

Solid State Communications ◽

10.1016/s0038-1098(98)00349-4 ◽

1998 ◽

Vol 108 (4) ◽

pp. 205-209 ◽

Cited By ~ 14

Author(s):

J Haetty ◽

E.H Lee ◽

H Luo ◽

A Petrou ◽

J Warnock

Keyword(s):

Quantum Well ◽

Type I ◽

Type Ii ◽

Interband Transitions ◽

Quantum Well Structures

Download Full-text

Electron-phonon interaction and electron mobility in quantum-well type-II PbTe/PbS structures

Semiconductors ◽

10.1134/1.1187461 ◽

1998 ◽

Vol 32 (6) ◽

pp. 665-667

Author(s):

V. V. Bondarenko ◽

V. V. Zabudskii ◽

F. F. Sizov

Keyword(s):

Quantum Well ◽

Electron Mobility ◽

Type Ii ◽

Phonon Interaction ◽

Electron Phonon Interaction

Download Full-text

(In)GaAsN-based type-II “W” quantum-well lasers for emission at λ=1.55 μm

Applied Physics Letters ◽

10.1063/1.1616193 ◽

2003 ◽

Vol 83 (14) ◽

pp. 2742-2744 ◽

Cited By ~ 51

Author(s):

I. Vurgaftman ◽

J. R. Meyer ◽

N. Tansu ◽

L. J. Mawst

Keyword(s):

Quantum Well ◽

Quantum Well Lasers ◽

Type Ii

Download Full-text

Extending lasing wavelength on InP with GaAsSb / GaInAs type-II active regions

ISLC 2012 International Semiconductor Laser Conference ◽

10.1109/islc.2012.6348308 ◽

2012 ◽

Author(s):

Stephan Sprengel ◽

Kristijonas Vizbaras ◽

Alexander Andrejew ◽

Tobias Gruendl ◽

Kathrin Geiger ◽

...

Keyword(s):

Active Regions ◽

Type Ii ◽

Lasing Wavelength

Download Full-text

Effect of subband mixing on exciton binding energies in type-II quantum-well structures

Physical Review B ◽

10.1103/physrevb.45.14380 ◽

1992 ◽

Vol 45 (24) ◽

pp. 14380-14383 ◽

Cited By ~ 6

Author(s):

J. Cen ◽

K. K. Bajaj

Keyword(s):

Quantum Well ◽

Binding Energies ◽

Type Ii ◽

Quantum Well Structures

Download Full-text