Physics Based Analysis of Gallium Nitride (GaN) High Electron Mobility Transistor (HEMT) for Radio Frequency (RF) Power and Gain Optimization

Mapping Intimacies ◽

10.21236/ada554911 ◽

2011 ◽

Author(s):

Pankaj B. Shah ◽

Joe X. Qiu

Keyword(s):

Gallium Nitride ◽

Radio Frequency ◽

Electron Mobility ◽

High Electron Mobility Transistor ◽

High Electron ◽

Rf Power ◽

High Electron Mobility ◽

Gain Optimization

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Iron-Induced Acceptor Centers in the Gallium Nitride High Electron Mobility Transistor: Thermal Simulation and Analysis

2019 International Conference on Advanced Technologies for Communications (ATC) ◽

10.1109/atc.2019.8924506 ◽

2019 ◽

Cited By ~ 1

Author(s):

Dao Dinh Ha ◽

Trung Tran Tuan ◽

Vladislav Volcheck ◽

Viktor Stempitsky

Keyword(s):

Gallium Nitride ◽

Electron Mobility ◽

High Electron Mobility Transistor ◽

Thermal Simulation ◽

High Electron ◽

High Electron Mobility

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Aluminum Gallium Nitride (GaN)/GaN High Electron Mobility Transistor-Based Sensors for Glucose Detection in Exhaled Breath Condensate

Journal of Diabetes Science and Technology ◽

10.1177/193229681000400122 ◽

2010 ◽

Vol 4 (1) ◽

pp. 171-179 ◽

Cited By ~ 24

Author(s):

Byung Hwan Chu ◽

Byoung Sam Kang ◽

Sheng Chun Hung ◽

Ke Hung Chen ◽

Fan Ren ◽

...

Keyword(s):

Gallium Nitride ◽

Electron Mobility ◽

Aluminum Gallium Nitride ◽

Exhaled Breath Condensate ◽

High Electron Mobility Transistor ◽

Glucose Detection ◽

Exhaled Breath ◽

High Electron ◽

High Electron Mobility ◽

Breath Condensate

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Investigation of high sensitivity radio-frequency readout circuit based on AlGaN/GaN high electron mobility transistor

Chinese Physics B ◽

10.1088/1674-1056/24/10/105201 ◽

2015 ◽

Vol 24 (10) ◽

pp. 105201 ◽

Cited By ~ 3

Author(s):

Xiao-Yu Zhang ◽

Ren-Bing Tan ◽

Jian-Dong Sun ◽

Xin-Xing Li ◽

Yu Zhou ◽

...

Keyword(s):

Radio Frequency ◽

Electron Mobility ◽

High Sensitivity ◽

High Electron Mobility Transistor ◽

High Electron ◽

Readout Circuit ◽

High Electron Mobility

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Bias-Dependent Radio Frequency Performance for 40 nm InAs High-Electron-Mobility Transistor with a Cutoff Frequency Higher than 600 GHz

Japanese Journal of Applied Physics ◽

10.7567/jjap.51.110203 ◽

2012 ◽

Vol 51 (11R) ◽

pp. 110203 ◽

Cited By ~ 4

Author(s):

Faiz Fatah ◽

Chien-I Kuo ◽

Heng-Tung Hsu ◽

Che-Yang Chiang ◽

Ching-Yi Hsu ◽

...

Keyword(s):

Radio Frequency ◽

Electron Mobility ◽

Cutoff Frequency ◽

High Electron Mobility Transistor ◽

High Electron ◽

High Electron Mobility

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Ferroelectric Polarization Switching Behavior of Hf 0.5 Zr 0.5 O 2 Gate Dielectrics on Gallium Nitride High‐Electron‐Mobility‐Transistor Heterostructures

physica status solidi (a) ◽

10.1002/pssa.201900717 ◽

2019 ◽

Vol 217 (7) ◽

pp. 1900717

Author(s):

Chunlei Wu ◽

Hansheng Ye ◽

Benjamin Grisafe ◽

Suman Datta ◽

Patrick Fay

Keyword(s):

Gallium Nitride ◽

Electron Mobility ◽

Gate Dielectrics ◽

High Electron Mobility Transistor ◽

Polarization Switching ◽

Switching Behavior ◽

Ferroelectric Polarization ◽

High Electron ◽

High Electron Mobility

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Proton irradiation effects on buffer-free gallium nitride on silicon carbide high electron mobility transistor-based radio frequency power amplifier

Semiconductor Science and Technology ◽

10.1088/1361-6641/abe2df ◽

2021 ◽

Vol 36 (4) ◽

pp. 045019

Author(s):

Samriddhi Raut ◽

Khushwant Sehra ◽

Meena Mishra ◽

D S Rawal ◽

Mridula Gupta ◽

...

Keyword(s):

Silicon Carbide ◽

Gallium Nitride ◽

Power Amplifier ◽

Electron Mobility ◽

Proton Irradiation ◽

High Electron Mobility Transistor ◽

High Electron ◽

Irradiation Effects ◽

High Electron Mobility ◽

Frequency Power

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A Compact Surface Potential Model for Flexible Radio Frequency AlGaN/GaN High-Electron-Mobility Transistor

IEEE Transactions on Microwave Theory and Techniques ◽

10.1109/tmtt.2021.3102237 ◽

2021 ◽

pp. 1-1

Author(s):

Yan Wang ◽

Qingzhi Wu ◽

Bo Yan ◽

Ruimin Xu ◽

Yuehang Xu

Keyword(s):

Radio Frequency ◽

Surface Potential ◽

Electron Mobility ◽

Potential Model ◽

High Electron Mobility Transistor ◽

Compact Surface ◽

High Electron ◽

High Electron Mobility ◽

Flexible Radio

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Simulation and implementation of a two‐mode‐operation transconductance regulator with a Gallium Nitride High‐Electron‐Mobility Transistor

International Journal of Circuit Theory and Applications ◽

10.1002/cta.3141 ◽

2021 ◽

Author(s):

Kai‐Jun Pai ◽

Chang‐Hua Lin

Keyword(s):

Gallium Nitride ◽

Electron Mobility ◽

High Electron Mobility Transistor ◽

High Electron ◽

High Electron Mobility ◽

Mode Operation

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Effect of thin gate dielectrics on DC, radio frequency and linearity characteristics of lattice‐matched AlInN/AlN/GaN metal–oxide–semiconductor high electron mobility transistor

IET Circuits Devices & Systems ◽

10.1049/iet-cds.2015.0332 ◽

2016 ◽

Vol 10 (5) ◽

pp. 423-432 ◽

Cited By ~ 6

Author(s):

Kanjalochan Jena ◽

Raghunandan Swain ◽

Trupti Ranjan Lenka

Keyword(s):

Metal Oxide ◽

Radio Frequency ◽

Electron Mobility ◽

Gate Dielectrics ◽

High Electron Mobility Transistor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

High Electron ◽

High Electron Mobility ◽

Lattice Matched

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Ultrasensitive radio-frequency pseudomorphic high-electron-mobility-transistor readout for quantum devices

Applied Physics Letters ◽

10.1063/1.1790598 ◽

2004 ◽

Vol 85 (14) ◽

pp. 2956-2958 ◽

Cited By ~ 16

Author(s):

Nikolai Oukhanski ◽

Eckhardt Hoenig

Keyword(s):

Radio Frequency ◽

Electron Mobility ◽

High Electron Mobility Transistor ◽

High Electron ◽

Quantum Devices ◽

High Electron Mobility

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