scholarly journals Real-time Optical Control of Ga(1-x)In(x)P Film Growth

1999 ◽  
Author(s):  
N. Dietz ◽  
V. Woods ◽  
K. Ito ◽  
I. Lauko
Keyword(s):  
Real Time ◽  
Film Growth ◽  
Optical Control

Artificial Neural Networks Estimation for Thicknesses of Multilayer Nano-Scale Films

2019 ◽  
Vol 962 ◽  
pp. 41-48
Author(s):  
Tzong Daw Wu ◽  
Jiun Shen Chen ◽  
Ching Pei Tseng ◽  
Cheng Chang Hsieh
Keyword(s):  
Thin Films ◽  
Neural Networks ◽  
Artificial Neural Networks ◽  
Real Time ◽  
Film Growth ◽  
Mean Squared Error ◽  
Squared Error ◽  
Thin Film Optics ◽  
The Mean ◽  
Artificial Neural

This study presents a real-time method for determining the thickness of each layer in multilayer thin films. Artificial neural networks (ANNs) were introduced to estimate thicknesses from a transmittance spectrum. After training via theoretical spectra which were generated by thin-film optics and modified by noise, ANNs were applied to estimate the thicknesses of four-layer nanoscale films which were TiO2, Ag, Ti, and TiO2 thin films assembled sequentially on polyethylene terephthalate (PET) substrates. The results reveal that the mean squared error of the estimation is 2.6 nm2, and is accurate enough to monitor film growth in real time.

Copper Film Growth by Chemical Vapor Deposition: Electrical and Optical Measurements in Real Time, and Studies of Morphology

1993 ◽  
Vol 140 (3) ◽  
pp. 789-796 ◽  
Author(s):  
B. Lecohier ◽  
B. Calpini ◽  
J. ‐M. Philippoz ◽  
H. van den Bergh ◽  
D. Laub ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Real Time ◽  
Vapor Deposition ◽  
Film Growth ◽  
Copper Film ◽  
Chemical Vapor ◽  
Optical Measurements

The crossover of preferred orientation in TiN film growth: A real time x-ray scattering study

1997 ◽  
Vol 12 (1) ◽  
pp. 9-12 ◽  
Author(s):  
J. H. Je ◽  
D. Y. Noh ◽  
H. K. Kim ◽  
K. S. Liang
Keyword(s):  
Real Time ◽  
Film Growth ◽  
Substrate Surface ◽  
Rf Sputtering ◽  
Growth Front ◽  
Surface Topology ◽  
Ex Situ ◽  
X Ray ◽  
X Ray Scattering ◽  
Ray Scattering

The orientational crossover phenomena in a radio-frequency (rf) sputtering growth of TiN films were studied in a real-time synchrotron x-ray scattering experiment. Following the initial random nucleation and growth stage, the growth was dominated by the grains with the (002) planes aligned with the substrate surface. Surprisingly, at later stages, the grains with the (002) growth front tilted away from the surface by about 60° became dominant. The tilting of the growth front resulted in a faceted surface topology that was confirmed by an ex situ AFM study. Our x-ray results suggest that the crossover was driven by the competition between the surface and the strain energy

scholarly journals Why In Situ, Real-Time Characterization of Thin-Film Growth Processes?

MRS Bulletin ◽  
1995 ◽  
Vol 20 (5) ◽  
pp. 14-17 ◽  
Author(s):  
Orlando Auciello ◽  
Alan R. Krauss
Keyword(s):  
Thin Film ◽  
Real Time ◽  
Analytical Methods ◽  
Film Growth ◽  
High Temperature Superconductors ◽  
Thin Layers ◽  
Thin Film Growth ◽  
Sampling Depth ◽  
Growth Environment

It is anticipated that a new generation of advanced electronic and optical devices will involve the synthesis of diverse materials in single or multielement thin-film form, or in layered heterostructures. These devices will most likely involve diverse materials such as high-temperature superconductors, ferroelectric, electrooptic, and optical materials; diamond; nitrides; semiconductors; insulators; and metals in the form of ultra-thin layers with sharp interfaces in which the layer thickness may reach atomic dimensions. Therefore, it becomes increasingly important to be able to monitor the deposition process in situ and in real time, particularly for complex multicomponent oxides or nitrides, in which the production of the desired phase is a highly sensitive function of the growth conditions, often requiring relatively high-pressure oxygen or nitrogen environments up to several hundred mTorr, and in some cases, several Torr. Consequently, the growth environment for many of these materials is incompatible with conventional surface-analytic methods, which are typically restricted to high-or ultrahigh-vacuum conditions. New deposition and analytical methods, or adaptation of those already established, will be required.Since thin-film growth occurs at the surface, the analytical methods should be highly surface-specific, although sub-surface diffusion and chemical processes also affect film properties. Sampling depth and ambient-gas compatibility are key factors which must be considered when choosing in situ probes of thin-film growth phenomena. In most cases, the sampling depth depends on the mean range of the exit species (ion, photon, or electron) in the sample.

Sign in / Sign up

Export Citation Format

Share Document