Electronic, Optical and Structural Properties of 6.1 Angstrom III-V Semiconductor Heterostructures for High-Performance Mid-Infrared Lasers

2003 ◽  
Author(s):  
Thomas F. Boggess
2019 ◽  
Vol 28 (1) ◽  
pp. 014208 ◽  
Author(s):  
Sheng-Wen Xie ◽  
Yu Zhang ◽  
Cheng-Ao Yang ◽  
Shu-Shan Huang ◽  
Ye Yuan ◽  
...  

2007 ◽  
Author(s):  
Ron Kaspi ◽  
Andrew P. Ongstad ◽  
Gregory C. Dente ◽  
Michael L. Tilton ◽  
Joseph R. Chavez ◽  
...  

2019 ◽  
Author(s):  
Marion Flatken ◽  
Nga Phung ◽  
Antonio Abate ◽  
Armin Hoell ◽  
Robert Wendt

2010 ◽  
Vol 49 (14) ◽  
pp. 2606 ◽  
Author(s):  
Steven T. Yang ◽  
Manyalibo J. Matthews ◽  
Selim Elhadj ◽  
Diane Cooke ◽  
Gabriel M. Guss ◽  
...  

Author(s):  
Richard F. Haglund ◽  
Nicole L. Dygert ◽  
Stephen L. Johnson ◽  
Kenneth E. Schriver ◽  
Hee K. Park

Micromachines ◽  
2018 ◽  
Vol 9 (7) ◽  
pp. 350 ◽  
Author(s):  
Dong Shin ◽  
Suk-Ho Choi

Graphene transparent conductive electrodes are highly attractive for photodetector (PD) applications due to their excellent electrical and optical properties. The emergence of graphene/semiconductor hybrid heterostructures provides a platform useful for fabricating high-performance optoelectronic devices, thereby overcoming the inherent limitations of graphene. Here, we review the studies of PDs based on graphene/semiconductor hybrid heterostructures, including device physics/design, performance, and process technologies for the optimization of PDs. In the last section, existing technologies and future challenges for PD applications of graphene/semiconductor hybrid heterostructures are discussed.


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