scholarly journals Graphene-Based Semiconductor Heterostructures for Photodetectors

Micromachines ◽  
2018 ◽  
Vol 9 (7) ◽  
pp. 350 ◽  
Author(s):  
Dong Shin ◽  
Suk-Ho Choi
Keyword(s):  
Optical Properties ◽  
High Performance ◽  
Optoelectronic Devices ◽  
Semiconductor Heterostructures ◽  
Device Physics ◽  
Electrical And Optical Properties ◽  
Design Performance ◽  
Future Challenges ◽  
Transparent Conductive Electrodes

Graphene transparent conductive electrodes are highly attractive for photodetector (PD) applications due to their excellent electrical and optical properties. The emergence of graphene/semiconductor hybrid heterostructures provides a platform useful for fabricating high-performance optoelectronic devices, thereby overcoming the inherent limitations of graphene. Here, we review the studies of PDs based on graphene/semiconductor hybrid heterostructures, including device physics/design, performance, and process technologies for the optimization of PDs. In the last section, existing technologies and future challenges for PD applications of graphene/semiconductor hybrid heterostructures are discussed.

scholarly journals Recent Studies of Semitransparent Solar Cells

Coatings ◽  
2018 ◽  
Vol 8 (10) ◽  
pp. 329 ◽  
Author(s):  
Dong Shin ◽  
Suk-Ho Choi
Keyword(s):  
Optical Properties ◽  
Solar Cells ◽  
High Performance ◽  
Recent Progress ◽  
Cell Structure ◽  
Photovoltaic Cells ◽  
Perovskite Solar Cells ◽  
Photovoltaic Cell ◽  
Visual Comfort ◽  
Electrical And Optical Properties

It is necessary to develop semitransparent photovoltaic cell for increasing the energy density from sunlight, useful for harvesting solar energy through the windows and roofs of buildings and vehicles. Current semitransparent photovoltaics are mostly based on Si, but it is difficult to adjust the color transmitted through Si cells intrinsically for enhancing the visual comfort for human. Recent intensive studies on translucent polymer- and perovskite-based photovoltaic cells offer considerable opportunities to escape from Si-oriented photovoltaics because their electrical and optical properties can be easily controlled by adjusting the material composition. Here, we review recent progress in materials fabrication, design of cell structure, and device engineering/characterization for high-performance/semitransparent organic and perovskite solar cells, and discuss major problems to overcome for commercialization of these solar cells.

High Performance Transparent Conducting Sb-Doped SnO2 Films Fabricated by Spray Pyrolysis

2013 ◽  
Vol 684 ◽  
pp. 85-89 ◽  
Author(s):  
Qian Zhao ◽  
Xue Qing Xu ◽  
Gang Xu
Keyword(s):  
Optical Properties ◽  
Spray Pyrolysis ◽  
High Performance ◽  
Spray Pyrolysis Method ◽  
Infrared Emissivity ◽  
Electrical And Optical Properties ◽  
Transparent Conducting ◽  
Pyrolysis Method ◽  
Low Emission ◽  
Structural Surface

Sb-doped SnO2 (ATO) films were successfully prepared by the spray-pyrolysis method with SnCl2•2H2O and SbCl3 as precursors. The structural, surface morphological, electrical and optical properties of the films were studied in details. The results indicated that all films consisted of tetragonal cassiterite SnO2 with preferred orientation along (110) and (200) crystal plane. A minimum resistivity as low as 1.59×10-3 Ω∙cm has been achieved. The infrared emissivity of the films on the surface of glass was ca. 0.36, which presents potential application in the low-emission window and building ceramics.

Temperature-tunable optical properties and carrier relaxation of CuInP2S6 crystal under ferroelectric-paraelectric phase transition

2021 ◽  
Author(s):  
Xiao-Qing Yan ◽  
Xin Zhao ◽  
Haijie Xu ◽  
Lei Zhang ◽  
Dongqi Liu ◽  
...  
Keyword(s):  
Phase Transition ◽  
Optical Properties ◽  
High Performance ◽  
Paraelectric Phase ◽  
Optoelectronic Devices ◽  
Paraelectric Phase Transition ◽  
Carrier Relaxation ◽  
Tunable Optical Properties

Tunable optical properties could expand the functionalities of optoelectronic devices, exploring materials with tunable optical properties is important for the development of high-performance optoelectronic devices. CuInP2S6 (CIPS) is a ferroelectric...

Controllable Vapor Growth of CsPbBr3/CdS 1D Heterostructures with Type-II Band Alignment for High-Performance Self-Powered Photodetector

CrystEngComm ◽  
2021 ◽  
Author(s):  
chao fan ◽  
Ke Yang ◽  
Xing Xu ◽  
Zhuodong Qi ◽  
Sha Jiang ◽  
...  
Keyword(s):  
High Performance ◽  
Optoelectronic Devices ◽  
Band Alignment ◽  
Semiconductor Heterostructures ◽  
Type Ii ◽  
High Quality ◽  
Vapor Growth ◽  
Controllable Growth ◽  
Self Powered

The controllable growth of semiconductor heterostructures with suitable band alignment and morphology is crucial to construct high-performance optoelectronic devices, which is limited to the traditional semiconductor families. Here, high-quality CsPbBr3/CdS...

scholarly journals The ZnO-In2O3 Oxide System as a Material for Low-Temperature Deposition of Transparent Electrodes

Materials ◽  
2021 ◽  
Vol 14 (22) ◽  
pp. 6859
Author(s):  
Akhmed Akhmedov ◽  
Aslan Abduev ◽  
Eldar Murliev ◽  
Abil Asvarov ◽  
Arsen Muslimov ◽  
...  
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Low Temperature ◽  
Optoelectronic Devices ◽  
Transparent Electrodes ◽  
Electrical And Optical Properties ◽  
X Ray ◽  
Low Temperature Deposition ◽  
Temperature Deposition ◽  
Ceramic Targets

The development of optoelectronic devices based on flexible organic substrates substantially decreases the possible process temperatures during all stages of device manufacturing. This makes it urgent to search for new transparent conducting oxide (TCO) materials, cheaper than traditional indium-tin oxide (ITO), for the low-temperature deposition of transparent electrodes, a necessary component of most optoelectronic devices. The article presents the results of a vertically integrated study aimed at the low-temperature production of TCO thin films based on a zinc-indium oxide (ZIO) system with acceptable functional characteristics. First, dense and conducting ceramic targets based on the (100-x) mol% (ZnO) + x mol% (In2O3) system (x = 0.5, 1.5, 2.5, 5.0, and 10.0) were synthesized by the spark plasma sintering method. The dependences of the microstructure and phase composition of the ZIO ceramic targets on the In2O3 content have been studied by powder X-ray diffraction, scanning electron microscopy and energy dispersive X-ray spectroscopy methods. Then, a set of ZIO thin films with different Zn/In ratios were obtained on unheated glass substrates by direct current (dc) magnetron sputtering of the sintered targets. Complex studies of microstructure, electrical and optical properties of the deposited films have revealed the presence of an optimal doping level (5 mol% In2O3) of the ZIO target at which the deposited TCO films, in terms of the combination of their electrical and optical properties, become comparable to the widely used expensive ITO.

scholarly journals Infrared photovoltaic detector based on p-GeTe/n-Si heterojunction

2020 ◽  
Author(s):  
Yiqun Zhao ◽  
Libin Tang ◽  
Shengyi Yang ◽  
Shu Ping Lau ◽  
Kar Seng Teng
Keyword(s):  
Optical Properties ◽  
Magnetron Sputtering ◽  
Phase Change ◽  
High Performance ◽  
Room Temperature ◽  
Light Irradiation ◽  
Electrical And Optical Properties ◽  
Photovoltaic Detectors ◽  
Narrow Bandgap ◽  
Photovoltaic Detector

Abstract GeTe is an important narrow bandgap semiconductor material and has found application in the fields of phase change storage as well as spintronics devices. However, it has not been studied for application in the field of infrared photovoltaic detectors working at room temperature. Herein, GeTe nanofilms were grown by magnetron sputtering technique and characterized to investigate its physical, electrical and optical properties. A high-performance infrared photovoltaic detector based on GeTe/Si heterojunction with the detectivity of 8×10 11 Jones at 850 nm light irradiation at room temperature was demonstrated.

scholarly journals Infrared photovoltaic detector based on p-GeTe/n-Si heterojunction

2020 ◽  
Author(s):  
Yiqun Zhao ◽  
Libin Tang ◽  
Shengyi Yang ◽  
Shu Ping Lau ◽  
Kar Seng Teng
Keyword(s):  
Optical Properties ◽  
Magnetron Sputtering ◽  
Phase Change ◽  
High Performance ◽  
Room Temperature ◽  
Light Irradiation ◽  
Electrical And Optical Properties ◽  
Photovoltaic Detectors ◽  
Narrow Bandgap ◽  
Photovoltaic Detector

Abstract GeTe is an important narrow bandgap semiconductor material and has found application in the fields of phase change storage as well as spintronics devices. However, it has not been studied for application in the field of infrared photovoltaic detectors working at room temperature. Herein, GeTe nanofilms were grown by magnetron sputtering technique and characterized to investigate its physical, electrical and optical properties. A high-performance infrared photovoltaic detector based on GeTe/Si heterojunction with the detectivity of 8×10 11 Jones at 850 nm light irradiation at room temperature was demonstrated.

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