Development and Characterization of a >1kV Power Electronic Capacitor for >300 degree C Operation

1997 ◽  
Author(s):  
J. Bowers ◽  
L. Mandelcorn ◽  
S. Gurkovich ◽  
K. Radford
Keyword(s):  
Power Electronic

Mechanical Characterization of Transient Liquid Phase Sintered (TLPS) Cu-Sn

2018 ◽  
Author(s):  
Erick Gutierrez ◽  
Subramani Manoharan ◽  
Maxim Serebreni ◽  
Patrick McCluskey
Keyword(s):  
Liquid Phase ◽  
Mechanical Load ◽  
Transient Liquid Phase ◽  
Electronic Systems ◽  
Power Electronic ◽  
Nano Indentation ◽  
Lap Shear ◽  
Die Attach ◽  
Power Modules

The increasing thermal demands in power electronic systems require the application of high temperature die attach materials. Transient Liquid Phase Sintered (TLPS) paste-based solder alloys have been demonstrated to effectively manage the thermal and mechanical load requirements of power modules. The microstructural features of these alloys provide interconnects with the necessary strength required to sustain high loads at high temperatures. To properly understand the influence of microstructure on mechanical behavior of these alloys, single lap shear experiments were performed on a TLPS system consisting of Copper and Tin particles (Cu-Sn). Nano-indentation measurements were performed on intermetallic phases of the TLPS, and the results obtained from lap shear testing and nano-indentation measurements are presented.

Physics Guided Data-Driven Characterization of Anomalies in Power Electronic Systems

2021 ◽  
Author(s):  
Kaustubh Bhatnagar ◽  
Subham Sahoo ◽  
Florin Iov ◽  
Frede Blaabjerg
Keyword(s):  
Data Driven ◽  
Electronic Systems ◽  
Power Electronic

Nano-Analytical and Electrical Characterization of 4H-SiC MOSFETs

2012 ◽  
Vol 711 ◽  
pp. 134-138 ◽  
Author(s):  
Ana Maria Beltran ◽  
Sylvie Schamm-Chardon ◽  
Vincent Mortet ◽  
Mathieu Lefebvre ◽  
Elena Bedel-Pereira ◽  
...  
Keyword(s):  
Electron Mobility ◽  
Electronic Devices ◽  
Chemical Properties ◽  
Electrical Characterization ◽  
Power Electronic ◽  
Layer Formation ◽  
Transmission Electron ◽  
P Type ◽  
And Chemical Properties

4H-SiC presents great advantages for its use in power electronic devices working at particular conditions. However the development of MOSFETs based on this material is limited by mobility degradation. N-channel SiC MOSFETs were manufactured on p-type epitaxial and p-implanted substrates and the electron mobility in the inversion channels was measured to be correlated with their structural and chemical properties determined by transmission electron microscopy methods. With regard to what was previously discussed in the literature, transition layer formation and carbon distribution across the SiC-SiO2interface are considered in relation with the measured low electron mobility of the MOSFETS.

X-ray Topography Characterization of GaN Substrates Used for Power Electronic Devices

2021 ◽  
Author(s):  
Yafei Liu ◽  
Hongyu Peng ◽  
Tuerxun Ailihumaer ◽  
Balaji Raghothamachar ◽  
Michael Dudley
Keyword(s):  
Electronic Devices ◽  
Power Electronic ◽  
X Ray
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