Compact, High-Power, Two-Photon Lasers.

1995 ◽  
Author(s):  
Daniel J. Gauthier
Keyword(s):  
1995 ◽  
Author(s):  
Daniel J. Gauthier
Keyword(s):  

2014 ◽  
Author(s):  
Mehmet Dogan ◽  
Christopher P. Michael ◽  
Yan Zheng ◽  
Lin Zhu ◽  
Jonah H. Jacob

1983 ◽  
Vol 61 (5) ◽  
pp. 1023-1026 ◽  
Author(s):  
R. J. Donovan ◽  
C. Fotakis ◽  
A. Hopkirk ◽  
C. B. McKendrick ◽  
A. Torre

Rotationally resolved photofragment fluorescence from OH(A2Σ+) following the coherent two-photon excitation of H2O with a KrF laser (248 nm), is reported and the dynamics of the dissociation process are discussed. Fluorescence from CN(B2Σ+) following two-photon excitation of ICN is also described. In both cases the energy distribution in the photofragments is shown to differ significantly from that observed with single-photon excitation at closely similar energies.Two further examples of multiphoton excitation, involving CS2 and SO2, are briefly discussed. In these cases absorption of a further photon, by fragments produced in the primary step, gives rise to strong laser-induced fluorescence.


2004 ◽  
Author(s):  
M. I. de La Rosa ◽  
Conception Perez ◽  
Ana B. Gonzalo ◽  
Klaus Grutzmacher ◽  
Andreas Steiger
Keyword(s):  

Author(s):  
Baohua Niu ◽  
Pat Pardy ◽  
Joe Davis ◽  
Mel Ortega ◽  
Travis Eiles

Abstract In this paper, we report on the first observation and study of two-photon absorption (TPA) based laser assisted device alteration (LADA) using a continuous-wave (CW) 1340nm laser. The study was conducted using LADA systems equipped with high numerical aperture (NA) liquid and solid immersion lens objectives on Intel’s 45 nm and 32 nm multiprocessor units (MPU) and test chips. The power densities achievable using these lenses are similar to those reported in the literature for TPA in silicon of CW 1455nm light [1]. We show that the induced photocurrent has a quadratic dependence on the input laser power, a key indicator of two-photon phenomenon. Our results imply that even when using 1340nm wavelength CW lasers, there is a potential for laser invasiveness with the high power densities achievable using high NA objectives. Laser induced damage of the DUT is also a possibility at these high power densities, particularly with the solid immersion lens (SIL). However, we show that the DUT damage threshold can be increased by reducing the DUT’s temperature. Finally, we present results demonstrating a >40% improvement in localization of critical timing faults using TPA based LADA, when compared to traditional 1064nm wavelength (single-photon absorption) LADA.


Optik ◽  
2013 ◽  
Vol 124 (1) ◽  
pp. 60-63 ◽  
Author(s):  
Na Xie ◽  
Yi Guo ◽  
Wanqing Huang ◽  
Xiaodong Wang ◽  
Runchang Zhao ◽  
...  

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