Electroluminescing Porous Silicon Device.

1995 ◽  
Author(s):  
John Penczek ◽  
Rosemary L. Smith
Keyword(s):  
Porous Silicon ◽  
Silicon Device

Enhanced Blue-Light Emission from an Indium-Treated Porous Silicon Device

1994 ◽  
Vol 33 (Part 1, No. 11) ◽  
pp. 6075-6077 ◽  
Author(s):  
Peter Steiner ◽  
Frank Kozlowski ◽  
Marek Wielunski ◽  
Walter Lang
Keyword(s):  
Porous Silicon ◽  
Blue Light ◽  
Light Emission ◽  
Blue Light Emission ◽  
Silicon Device

Hybrid optical biosensor based on polymer infiltrated porous silicon device

2008 ◽  
Author(s):  
L. Rotiroti ◽  
E. De Tommasi ◽  
I. Rendina ◽  
L. De Stefano ◽  
M. Canciello ◽  
...  
Keyword(s):  
Porous Silicon ◽  
Optical Biosensor ◽  
Silicon Device

Observation of light-induced current from a porous silicon device

1992 ◽  
Vol 32 (3) ◽  
pp. 310-314 ◽  
Author(s):  
H. Zimmermann ◽  
F.H. Cocks ◽  
U. Gösele
Keyword(s):  
Porous Silicon ◽  
Induced Current ◽  
Silicon Device

Near-Infrared Emission from a Porous Silicon Device

1994 ◽  
Vol 358 ◽  
Author(s):  
J. Penczek ◽  
A. Knoesen ◽  
H. W. H. Lee ◽  
R. L. Smith
Keyword(s):  
Porous Silicon ◽  
Negative Differential Resistance ◽  
Near Infrared ◽  
Forward Bias ◽  
Differential Resistance ◽  
Infrared Emission ◽  
Exponential Dependence ◽  
Optical And Electrical Properties ◽  
Silicon Device ◽  
Near Infrared Emission

ABSTRACTVisible to near-infrared emission is produced from a porous silicon device under current injection. The porous silicon emitter is fabricated by selectively under-etching a p-n junction. The device is rectifying when biased across the junction, and exhibits a region of negative differential resistance (NDR) at the higher current levels. Bright red-orange emission is observed along the length of the junction in forward bias, but most of the light is emitted in the near-infrared with a peak near 1.3 µm at 30 mA. The intensity of the visible component has an exponential dependence on photon energy. The optical and electrical properties of this device are presented and possible mechanisms are discussed.

Electrically induced light emission and novel photocurrent response of a porous silicon device

1993 ◽  
Vol 63 (6) ◽  
pp. 770-772 ◽  
Author(s):  
Hongtao Shi ◽  
Youdou Zheng ◽  
Yongbin Wang ◽  
Renkuan Yuan
Keyword(s):  
Porous Silicon ◽  
Light Emission ◽  
Photocurrent Response ◽  
Silicon Device

Electroluminescent porous silicon device with an external quantum efficiency greater than 0.1% under CW operation

1995 ◽  
Vol 31 (15) ◽  
pp. 1288-1289 ◽  
Author(s):  
A. Loni ◽  
L.T. Canham ◽  
A.J. Simons ◽  
T.I. Cox ◽  
P.D.J. Calcott
Keyword(s):  
Porous Silicon ◽  
Quantum Efficiency ◽  
External Quantum Efficiency ◽  
Cw Operation ◽  
Silicon Device

A lateral injection porous silicon device structure for light-emitting diodes

1995 ◽  
Vol 255 (1-2) ◽  
pp. 262-265 ◽  
Author(s):  
C.C. Yeh ◽  
C.H. Lee ◽  
H.L. Hwang ◽  
Klaus Y.J Hsu
Keyword(s):  
Porous Silicon ◽  
Light Emitting Diodes ◽  
Device Structure ◽  
Light Emitting ◽  
Silicon Device
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