Electroluminescent porous silicon device with an external quantum efficiency greater than 0.1% under CW operation

1995 ◽  
Vol 31 (15) ◽  
pp. 1288-1289 ◽  
Author(s):  
A. Loni ◽  
L.T. Canham ◽  
A.J. Simons ◽  
T.I. Cox ◽  
P.D.J. Calcott
Keyword(s):  
Porous Silicon ◽  
Quantum Efficiency ◽  
External Quantum Efficiency ◽  
Cw Operation ◽  
Silicon Device

High External Quantum Efficiency of Electroluminescence from Photoanodized Porous Silicon

1998 ◽  
Vol 37 (Part 2, No. 3B) ◽  
pp. L303-L305 ◽  
Author(s):  
Kohsuke Nishimura ◽  
Yasuyuki Nagao ◽  
Noriaki Ikeda
Keyword(s):  
Porous Silicon ◽  
Quantum Efficiency ◽  
External Quantum Efficiency

Demonstration of ultra-small (0.2%) for mini-displays

2020 ◽  
Vol 14 (1) ◽  
pp. 011004
Author(s):  
Shubhra S. Pasayat ◽  
Chirag Gupta ◽  
Matthew S. Wong ◽  
Ryan Ley ◽  
Michael J. Gordon ◽  
...  
Keyword(s):  
Quantum Efficiency ◽  
External Quantum Efficiency

Electroluminescing Porous Silicon Device.

1995 ◽  
Author(s):  
John Penczek ◽  
Rosemary L. Smith
Keyword(s):  
Porous Silicon ◽  
Silicon Device

scholarly journals Phenylalkylammonium passivation enables perovskite light emitting diodes with record high-radiance operational lifetime: the chain length matters

2021 ◽  
Vol 12 (1) ◽  
Author(s):  
Yuwei Guo ◽  
Sofia Apergi ◽  
Nan Li ◽  
Mengyu Chen ◽  
Chunyang Yin ◽  
...  
Keyword(s):  
Chain Length ◽  
Quantum Efficiency ◽  
External Quantum Efficiency ◽  
Light Emitting Diodes ◽  
Surface Defects ◽  
Theoretical Modelling ◽  
Ion Migration ◽  
Light Emitting ◽  
Operational Lifetime ◽  
Chain Lengths

AbstractPerovskite light emitting diodes suffer from poor operational stability, exhibiting a rapid decay of external quantum efficiency within minutes to hours after turn-on. To address this issue, we explore surface treatment of perovskite films with phenylalkylammonium iodide molecules of varying alkyl chain lengths. Combining experimental characterization and theoretical modelling, we show that these molecules stabilize the perovskite through suppression of iodide ion migration. The stabilization effect is enhanced with increasing chain length due to the stronger binding of the molecules with the perovskite surface, as well as the increased steric hindrance to reconfiguration for accommodating ion migration. The passivation also reduces the surface defects, resulting in a high radiance and delayed roll-off of external quantum efficiency. Using the optimized passivation molecule, phenylpropylammonium iodide, we achieve devices with an efficiency of 17.5%, a radiance of 1282.8 W sr−1 m−2 and a record T50 half-lifetime of 130 h under 100 mA cm−2.

New Results on Electroluminescence from Porous Silicon

1992 ◽  
Vol 283 ◽  
Author(s):  
Peter Steiner ◽  
Frank Kozlowski ◽  
Hermann Sandmaier ◽  
Walter Lang
Keyword(s):  
Porous Silicon ◽  
Quantum Efficiency ◽  
Light Emitting Diodes ◽  
Uv Light ◽  
Green Light ◽  
Light Emitting ◽  
Porous Region ◽  
First Results

ABSTRACTFirst results on light emitting diodes in porous silicon were reported in 1991. They showed a quantum efficiency of 10-7 to 10-5 and an orange spectrum. Over the last year some progress was achieved:- By applying UV-light during the etching blue and green light emitting diodes in porous silicon are fabricated.- When a p/n junction is realized within the porous region, a quantum efficiency of 10-4 is obtained.

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