Photonic Silicon Device Physics.

1995 ◽  
Author(s):  
S. D. Russell ◽  
W. B. Dubbelday ◽  
R. L. Shimabukuro ◽  
P. R. De La Houssaye
Author(s):  
H.-S. Philip Wong ◽  
Deji Akinwande

Author(s):  
R.K. Jain ◽  
T. Malik ◽  
T.R. Lundquist ◽  
Q.S. Wang ◽  
R. Schlangen ◽  
...  

Abstract Backside circuit edit techniques on integrated circuits (ICs) are becoming common due to increase number of metal layers and flip chip type packaging. However, a thorough study of the effects of these modifications has not been published. This in spite of the fact that the IC engineers have sometimes wondered about the effects of backside circuit edit on IC behavior. The IC industry was well aware that modifications can lead to an alteration of the intrinsic behavior of a circuit after a FIB edit [1]. However, because alterations can be controlled [2], they have not stopped the IC industry from using the FIB to successfully reconfigure ICs to produce working “silicon” to prove design and mask changes. Reliability of silicon device structures, transistors and diodes, are investigated by monitoring intrinsic parameters before and after various steps of modification.


1995 ◽  
Author(s):  
John Penczek ◽  
Rosemary L. Smith

Author(s):  
Chunxiu Zang ◽  
Mengxin Xu ◽  
Letian Zhang ◽  
Shihao Liu ◽  
Wenfa Xie

Thin film light-emitting devices (LEDs) with sandwich structure, such as organic light emitting devices (OLEDs), quantum dots LEDs (QLEDs) and perovskite LEDs (PeLEDs), have attracted wide attentions because of their...


APL Materials ◽  
2021 ◽  
Vol 9 (5) ◽  
pp. 050702
Author(s):  
D. Ielmini ◽  
Z. Wang ◽  
Y. Liu
Keyword(s):  

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