Overlayer Adhesion and Passivation of Electronic Materials

1992 ◽  
Author(s):  
W. N. Unertl ◽  
M. Grunze ◽  
D. Frankel
Keyword(s):  
Electronic Materials

Applications of SIMS to electronic materials and devices

1992 ◽  
Vol 50 (2) ◽  
pp. 1682-1683
Author(s):  
S.F. Corcoran
Keyword(s):  
Depth Distribution ◽  
Secondary Ion Mass Spectrometry ◽  
Semiconductor Device ◽  
Electronic Materials ◽  
Profile Analysis ◽  
Semiconductor Industry ◽  
Small Diameter ◽  
Depth Resolution ◽  
Detection Sensitivity

Over the past decade secondary ion mass spectrometry (SIMS) has played an increasingly important role in the characterization of electronic materials and devices. The ability of SIMS to provide part per million detection sensitivity for most elements while maintaining excellent depth resolution has made this technique indispensable in the semiconductor industry. Today SIMS is used extensively in the characterization of dopant profiles, thin film analysis, and trace analysis in bulk materials. The SIMS technique also lends itself to 2-D and 3-D imaging via either the use of stigmatic ion optics or small diameter primary beams.By far the most common application of SIMS is the determination of the depth distribution of dopants (B, As, P) intentionally introduced into semiconductor materials via ion implantation or epitaxial growth. Such measurements are critical since the dopant concentration and depth distribution can seriously affect the performance of a semiconductor device. In a typical depth profile analysis, keV ion sputtering is used to remove successive layers the sample.

TO THE QUESTION OF THE SYSTEMATIC NATURE OF ELECTRONIC EDUCATIONAL MATERIALS FOR HIGHER EDUCATION

2019 ◽  
pp. 54-62
Author(s):  
K. R. Ovchinnikova
Keyword(s):  
Learning Process ◽  
Information Technologies ◽  
Electronic Materials ◽  
Subject Area ◽  
Design Activity ◽  
Learning Technology ◽  
Educational Materials ◽  
Scientific Publications ◽  
Structured Information ◽  
Single Complex

The relevance of the issue under consideration in the article is connected with the confusion in scientific publications of the concepts of “electronic educational materials” and “electronic educational resources”. The article discusses the concept of “electronic educational materials” from the perspective of general systems theory. And their system character is proved. This allows them to be represented as a single complex of structured information of a specific subject area and didactic materials. These didactic materials support the learning process at all stages of its didactic cycle in accordance with the chosen learning technology based on the didactic capabilities of information technologies. It is concluded that the system of high school electronic materials allows to expand the boundaries of the design activity of the teacher, provide management of the student’s thinking activity, to implement a competence approach to the learning process at university

Large Parameters and Giant Effects in Electronic Materials

2020 ◽  
Vol 63 (6) ◽  
pp. 289-298
Author(s):  
Yu. M. Poplavko ◽  
Yu. I. Yakymenko
Keyword(s):  
Electronic Materials

Failure Analysis and Defect Inspection of Electronic Devices by High-Resolution Cathodoluminescence

2017 ◽  
Author(s):  
C. Monachon ◽  
M.S. Zielinski ◽  
D. Gachet ◽  
S. Sonderegger ◽  
S. Muckenhirn ◽  
...  
Keyword(s):  
Failure Analysis ◽  
Electronic Materials ◽  
Electronic Devices ◽  
Optical Emission ◽  
Large Field ◽  
Nanometer Scale ◽  
Defect Analysis ◽  
Defect Inspection ◽  
Spectrally Resolved ◽  
Non Destructive

Abstract Quantitative cathodoluminescence (CL) microscopy is a new optical spectroscopy technique that measures electron beam-induced optical emission over large field of view with a spatial resolution close to that of a scanning electron microscope (SEM). Correlation of surface morphology (SE contrast) with spectrally resolved and highly material composition sensitive CL emission opens a new pathway in non-destructive failure and defect analysis at the nanometer scale. Here we present application of a modern CL microscope in defect and homogeneity metrology, as well as failure analysis in semiconducting electronic materials

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