Novel Method for Chemical Vapor Deposition and Atomic Layer Epitaxy Using Radical Chemistry

1992 ◽  
Author(s):  
T. I. Hukka ◽  
R. E. Rawles ◽  
M. P. D'Evelyn
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Atomic Layer ◽  
Atomic Layer Epitaxy ◽  
Radical Chemistry ◽  
Novel Method

Atomic layer epitaxy of germanium on silicon using flash heating chemical vapor deposition

1991 ◽  
Vol 115 (1-4) ◽  
pp. 79-82 ◽  
Author(s):  
Masao Sakuraba ◽  
Junichi Murota ◽  
Nobuo Mikoshiba ◽  
Shoichi Ono
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Atomic Layer ◽  
Atomic Layer Epitaxy

Atomic layer epitaxy of GaN over sapphire using switched metalorganic chemical vapor deposition

1992 ◽  
Vol 60 (11) ◽  
pp. 1366-1368 ◽  
Author(s):  
M. Asif Khan ◽  
R. A. Skogman ◽  
J. M. Van Hove ◽  
D. T. Olson ◽  
J. N. Kuznia
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Atomic Layer ◽  
Atomic Layer Epitaxy ◽  
Metalorganic Chemical

Metalorganic Chemical Vapor Deposition of InP by Pulsing Precursors

1989 ◽  
Vol 160 ◽  
Author(s):  
W. K. Chen ◽  
J. C. Chen ◽  
L. Anthony ◽  
P. L. Liu
Keyword(s):  
Chemical Vapor Deposition ◽  
Substrate Temperature ◽  
Vapor Deposition ◽  
Growth Process ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Atomic Layer ◽  
Atomic Layer Epitaxy ◽  
Monolayer Growth ◽  
Metalorganic Chemical

AbstractWe have grown InP by supplying precursors alternately into the reactor of a metalorganic chemical vapor deposition system. Epitaxial growth has been obtained with a substrate temperature as low as 330 °C. The growth process is mass-transport-limited in the temperature range of 420 to 580 °C. It is kinetic-controlled below 400 °C. At 340 °C, we have achieved monolayer growth in each cycle, i.e., atomic layer epitaxy.

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