Atomic layer epitaxy of GaN over sapphire using switched metalorganic chemical vapor deposition

1992 ◽  
Vol 60 (11) ◽  
pp. 1366-1368 ◽  
Author(s):  
M. Asif Khan ◽  
R. A. Skogman ◽  
J. M. Van Hove ◽  
D. T. Olson ◽  
J. N. Kuznia
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Atomic Layer ◽  
Atomic Layer Epitaxy ◽  
Metalorganic Chemical

Metalorganic Chemical Vapor Deposition of InP by Pulsing Precursors

1989 ◽  
Vol 160 ◽  
Author(s):  
W. K. Chen ◽  
J. C. Chen ◽  
L. Anthony ◽  
P. L. Liu
Keyword(s):  
Chemical Vapor Deposition ◽  
Substrate Temperature ◽  
Vapor Deposition ◽  
Growth Process ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Atomic Layer ◽  
Atomic Layer Epitaxy ◽  
Monolayer Growth ◽  
Metalorganic Chemical

AbstractWe have grown InP by supplying precursors alternately into the reactor of a metalorganic chemical vapor deposition system. Epitaxial growth has been obtained with a substrate temperature as low as 330 °C. The growth process is mass-transport-limited in the temperature range of 420 to 580 °C. It is kinetic-controlled below 400 °C. At 340 °C, we have achieved monolayer growth in each cycle, i.e., atomic layer epitaxy.

Metalorganic chemical vapor deposition of quaternary AlInGaN multiple quantum well structures for deep ultraviolet emitters

2002 ◽  
Vol 722 ◽  
Author(s):  
J. W. Yang ◽  
C. Q. Chen ◽  
J. P. Zhang ◽  
Q. Fareed ◽  
H. M. Wang ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Multiple Quantum Well ◽  
Chemical Vapor ◽  
Atomic Layer ◽  
Multiple Quantum ◽  
Band Tail ◽  
Quantum Well Structures ◽  
Metalorganic Chemical

AbstractWe report on the growth of quaternary AlInGaN layers and MQWs by two different metalorganic chemical vapor deposition (MOCVD) techniques such as pulsed atomic layer epitaxy (PALE) and pulsed MOCVD (PMOCVD). For both growth processes, emission wavelength of quaternary MQWs can be tuned from 350 nm to 300 nm by simply changing the unit growth cell configurations. The PALE grown AlInGaN MQWs have a very smooth surface, few band tail states and exhibit a band-to-band emission. The PMOCVD grown AlInGaN MQWs exhibit a high density of band tail states, which strongly enhance spontaneous emission. Based on the characterization by photoluminescence, X-ray diffraction and AFM, both MOCVD techniques grown quaternary samples are shown to be promising for fabricating the active region of deep UV LEDs.

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