Interface-Phonon-Mediated Magnetopolaronic Effect on Impurity Transition Energies in Quantum Wells

1991 ◽  
Author(s):  
D. L. Lin ◽  
R. Chen ◽  
Thomas F. George
Keyword(s):  
Quantum Wells ◽  
Transition Energies

Interface-phonon-mediated magnetopolaronic effect on impurity transition energies in quantum wells

1991 ◽  
Vol 43 (11) ◽  
pp. 9328-9331 ◽  
Author(s):  
D. L. Lin ◽  
R. Chen ◽  
Thomas F. George
Keyword(s):  
Quantum Wells ◽  
Transition Energies

Modeling of elastic, piezoelectric and optical properties of vertically correlated GaN/AlN quantum dots

2004 ◽  
Vol 831 ◽  
Author(s):  
Sławomir P. Łepkowski ◽  
Grzegorz Jurczak ◽  
Paweł Dłużewski ◽  
Tadeusz Suski
Keyword(s):  
Quantum Dots ◽  
Optical Properties ◽  
Quantum Dot ◽  
Quantum Wells ◽  
Electrostatic Potential ◽  
Barrier Width ◽  
Base Diameter ◽  
Transition Energies ◽  
Band Transition ◽  
Hexagonal Pyramid

ABSTRACTWe theoretically investigate elastic, piezoelectric and optical properties of wurtzite GaN/AlN quantum dots, having hexagonal pyramid-shape, stacked in a multilayer. We show that the strain existing in quantum dots and barriers depends significantly on the distance between the dots i.e. on the width of AlN barriers. For typical QDs, having the base diameter of 19.5nm, the drop of the electrostatic potential in the quantum dot region slightly decreases with decreasing of the barrier width. This decrease is however much smaller for QDs than for superlattice of GaN/AlGaN quantum wells, with thickness similar to the height of QDs. Consequently, the band-to-band transition energies in the vertically correlated GaN/AlN QDs show unexpected, rather weak dependence on the width of AlN barriers. Increasing the QD base diameter leads to stronger decreasing dependence of the band-to-band transition energies vs. the width of AlN barriers, similar to that observed for superlattieces of QWs.

Enhancement of intersubband transition energies in GaAs quantum wells by Si delta doping of high concentration

1998 ◽  
Vol 72 (6) ◽  
pp. 719-721 ◽  
Author(s):  
R. Sasagawa ◽  
H. Sugawara ◽  
Y. Ohno ◽  
H. Nakajima ◽  
S. Tsujino ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Intersubband Transition ◽  
High Concentration ◽  
Transition Energies ◽  
Delta Doping

Optical transition energies of GaInP quantum wells with GaInP/AlInP superlattice barriers

1994 ◽  
Vol 76 (2) ◽  
pp. 1355-1357 ◽  
Author(s):  
Y. Seko ◽  
S. Fukatsu ◽  
Y. Shiraki ◽  
M. Fuse
Keyword(s):  
Quantum Wells ◽  
Optical Transition ◽  
Transition Energies

Electric field dependence of exciton transition energies in GaAs-AlxGa1−xAs quantum wells studied by photocurrent spectroscopy

1988 ◽  
Vol 38 (11) ◽  
pp. 7796-7799 ◽  
Author(s):  
P. W. Yu ◽  
G. D. Sanders ◽  
K. R. Evans ◽  
D. C. Reynolds ◽  
K. K. Bajaj ◽  
...  
Keyword(s):  
Electric Field ◽  
Quantum Wells ◽  
Field Dependence ◽  
Exciton Transition ◽  
Transition Energies ◽  
Electric Field Dependence ◽  
Photocurrent Spectroscopy

Effects of temperature on transition energies of GaAsSbN/GaAs single quantum wells

2011 ◽  
Vol 23 (32) ◽  
pp. 325801 ◽  
Author(s):  
S A Lourenço ◽  
M A T da Silva ◽  
I F L Dias ◽  
J L Duarte ◽  
J C Harmand
Keyword(s):  
Quantum Wells ◽  
Single Quantum ◽  
Transition Energies ◽  
Effects Of Temperature

Intersubband transition energies in quantum wells inn-Type GaAs-Alx Ga1 -xAs heterostructures

1987 ◽  
Vol 32 (6) ◽  
pp. 655-661 ◽  
Author(s):  
V. M. S. Gomes ◽  
G. M. G. Oliveira ◽  
J. R. Leite ◽  
A. S. Chaves
Keyword(s):  
Quantum Wells ◽  
Intersubband Transition ◽  
Transition Energies
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