Micro-Raman Analysis of Dielectric Optical Thin Films.

1988 ◽  
Author(s):  
Ansgar Schmid
Keyword(s):  
Thin Films ◽  
Raman Analysis

Micro-Raman analysis of Bi Sr Ca Cu O superconducting thin films deposited by pulsed laser evaporation

1989 ◽  
Vol 162-164 ◽  
pp. 1105-1106 ◽  
Author(s):  
E. Faulques ◽  
P. Dupouy ◽  
G. Hauchecorne ◽  
F. Kerherve ◽  
A. Laurent ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser ◽  
Laser Evaporation ◽  
Superconducting Thin Films ◽  
Raman Analysis

Raman analysis of monoclinic Cu2SnS3 thin films

2012 ◽  
Vol 100 (19) ◽  
pp. 192103 ◽  
Author(s):  
Dominik M. Berg ◽  
Rabie Djemour ◽  
Levent Gütay ◽  
Susanne Siebentritt ◽  
Phillip J. Dale ◽  
...  
Keyword(s):  
Thin Films ◽  
Raman Analysis

In situ micro-Raman analysis and X-ray diffraction of nickel silicide thin films on silicon

Micron ◽  
2009 ◽  
Vol 40 (1) ◽  
pp. 89-93 ◽  
Author(s):  
M. Bhaskaran ◽  
S. Sriram ◽  
T.S. Perova ◽  
V. Ermakov ◽  
G.J. Thorogood ◽  
...  
Keyword(s):  
Thin Films ◽  
Nickel Silicide ◽  
X Ray Diffraction ◽  
Raman Analysis ◽  
X Ray

Use of Electroless Plating Copper Thin Films for Catalysis

2006 ◽  
Vol 514-516 ◽  
pp. 1328-1332 ◽  
Author(s):  
Alexsander T. Carvalho ◽  
António Pereira Nascimento Filho ◽  
Lilian Marques Silva ◽  
Maria Lucia Pereira Silva ◽  
Joana Catarina Madaleno ◽  
...  
Keyword(s):  
Thin Films ◽  
Copper Oxide ◽  
Organic Compounds ◽  
Cluster Formation ◽  
Sample Pretreatment ◽  
Polar Compounds ◽  
Copper Films ◽  
Raman Analysis ◽  
All Solutions ◽  
Oxide Bands

Recently, it was demonstrated that copper thin films show good adsorption characteristics for organic polar and non-polar compounds. Also, these films when used in small cavities can favor preconcentration of these organic compounds. It is also known that copper oxide can provide catalysis of organic compounds. Therefore, the aim of this work is the study of copper thin film catalysis when used in small cavities. Copper thin films, 25 nm thick, were deposited on silicon and/or rough silicon. These films do not show oxide on the surface when analyzed by Rutherford backscattering. Also, Raman analysis of these films showed only silicon bands, due to the substrate, however infrared spectroscopy shows oxide bands for films exposed to organic compound aqueous solutions. Cavities with copper films deposited inside were tested with a continuous flow of n-hexane, acetone or 2-propanol admitted in the system. The effluent was analyzed by Quartz Crystal Microbalance. It was shown that n-hexane or acetone can be trapped. The system also shows good reproducibility. Tests of catalysis were carried out using Raman spectroscopy and heating the films up to 300°C during 3 minutes after exposure to n-hexane, 2- propanol and acetophenone – pure or saturated aqueous solution. After the exposure, Raman spectra present intense bands only for 2-propanol, indicating that adsorption easily occurs. However, after heating with all solutions it was not found only silicon bands. Raman microscopy after heating also showed copper oxide cluster formation and, eventually, graphite formation. Although the heating provides oxide copper formation, this reaction does not produce a high amount of residues, which means that catalysis is possible in this condition. Thus, a simple device using copper thin films can be useful as sample pretreatment on microTAS development.

Infrared and Raman analysis of plasma CVD boron nitride thin films

1999 ◽  
Vol 8 (2-5) ◽  
pp. 398-401 ◽  
Author(s):  
M Ben el Mekki ◽  
N Mestres ◽  
J Pascual ◽  
M.C Polo ◽  
J.L Andújar
Keyword(s):  
Thin Films ◽  
Boron Nitride ◽  
Plasma Cvd ◽  
Raman Analysis

scholarly journals Studies on structural, optical and electrical properties of electron beam evaporated Cu2SnSe3 thin films

2016 ◽  
Vol 34 (4) ◽  
pp. 703-707 ◽  
Author(s):  
P. Prathiba Jeya Helan ◽  
K. Mohanraj ◽  
G. Sivakumar
Keyword(s):  
Thin Films ◽  
Electron Beam ◽  
Electrical Properties ◽  
Visible Region ◽  
Thin Film Deposition ◽  
Electron Beam Evaporation ◽  
Film Deposition ◽  
Optical And Electrical Properties ◽  
X Ray Diffraction ◽  
Raman Analysis

AbstractThe present work describes the deposition of semiconducting Cu2SnSe3 thin films by electron beam evaporation method. The structure of the deposited films was characterized by XRD and Raman analysis. X-ray diffraction study revealed that the Cu2SnSe3 thin films had a cubic sphalerite-like structure with crystallite size of 12 nm. Raman spectrum of the thin films confirmed the phase purity. FESEM analysis showed a continuous film with polydispersed grains of a diameter less than 1 цш and the elemental composition was confirmed by EDS spectrum. The UV-Vis spectrum revealed that the sample had high absorption in the visible region and the band gap was found to be 1.15 eV. The I-V graph exhibited the electrical resistivity and conductivity of the film as 2.13 Ω-cm and 0.468 S/cm, respectively. Thus, the electron beam evaporated Cu2SnSe3 thin films showed high purity of structure and good morphological, optical and electrical properties comparable with other methods of thin film deposition.

scholarly journals Structure and Conductivity Studies of Scandia and Alumina Doped Zirconia Thin Films

Coatings ◽  
2019 ◽  
Vol 9 (5) ◽  
pp. 317 ◽  
Author(s):  
Mantas Sriubas ◽  
Nursultan Kainbayev ◽  
Darius Virbukas ◽  
Kristina Bočkutė ◽  
Živilė Rutkūnienė ◽  
...  
Keyword(s):  
Thin Films ◽  
Vapor Deposition ◽  
Size Dependence ◽  
Cubic Phase ◽  
Secondary Phases ◽  
X Ray Diffraction ◽  
Impedance Measurements ◽  
Raman Analysis ◽  
X Ray ◽  
Co Doped

In this work, scandia-doped zirconia (ScSZ) and scandia–alumina co-doped zirconia (ScSZAl) thin films were prepared by electron beam vapor deposition. X-ray diffraction (XRD) results indicated a presence of ZrO2 cubic phase structure, yet Raman analysis revealed the existence of secondary tetragonal and rhombohedral phases. Thus, XRD measurements were supported by Raman spectroscopy in order to comprehensively analyze the structure of formed ScSZ and ScSZAl thin films. It was also found that Al dopant slows down the formation of the cubic phase. The impedance measurements affirmed the correlation of the amount of secondary phases with the conductivity results and nonlinear crystallite size dependence.

Antimony Sulfide Thin Films Obtained by Chemical Bath Deposition using Tartaric Acid as Complexing Agent

MRS Advances ◽  
2018 ◽  
Vol 3 (56) ◽  
pp. 3307-3313 ◽  
Author(s):  
J. Escorcia-García ◽  
M. Domínguez-Díaz ◽  
A. Hernández-Granados ◽  
H. Martínez
Keyword(s):  
Thin Films ◽  
Tartaric Acid ◽  
Chemical Bath Deposition ◽  
Optical Band Gap ◽  
Window Layer ◽  
Complexing Agent ◽  
Raman Analysis ◽  
Ph Values ◽  
Photo Conductivity ◽  
Crystallite Sizes

The deposition of uniform, reproducible and compact Sb2S3 thin films were obtained by chemical bath deposition using tartaric acid as a complexing agent. It was found that the thickness of the films increases with the pH of the solution, reaching values of 130 and 170 nm for pH values of 9.5 and 10, respectively. XRD, as well as Raman analysis, showed amorphous Sb2S3 films formed directly from the chemical bath, which crystallized into stibnite after a thermal treatment in N2 with crystallite sizes between 31 and 39 nm. On the other hand, the optical band gap of the Sb2S3 films decreased with an increase in pH, with values of 1.82-2.03 eV for the crystalline ones. An n-type photo-conductivity of 10-6 Ω-1 cm-1 was obtained for the heated films. The evaluation of these films for solar cell applications using CdS as the window layer gave a Voc of 656 mV and a Jsc of 2.66 mA/cm2 under AM1.5G radiation.

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