Antimony Sulfide Thin Films Obtained by Chemical Bath Deposition using Tartaric Acid as Complexing Agent

MRS Advances ◽  
2018 ◽  
Vol 3 (56) ◽  
pp. 3307-3313 ◽  
Author(s):  
J. Escorcia-García ◽  
M. Domínguez-Díaz ◽  
A. Hernández-Granados ◽  
H. Martínez
Keyword(s):  
Thin Films ◽  
Tartaric Acid ◽  
Chemical Bath Deposition ◽  
Optical Band Gap ◽  
Window Layer ◽  
Complexing Agent ◽  
Raman Analysis ◽  
Ph Values ◽  
Photo Conductivity ◽  
Crystallite Sizes

The deposition of uniform, reproducible and compact Sb2S3 thin films were obtained by chemical bath deposition using tartaric acid as a complexing agent. It was found that the thickness of the films increases with the pH of the solution, reaching values of 130 and 170 nm for pH values of 9.5 and 10, respectively. XRD, as well as Raman analysis, showed amorphous Sb2S3 films formed directly from the chemical bath, which crystallized into stibnite after a thermal treatment in N2 with crystallite sizes between 31 and 39 nm. On the other hand, the optical band gap of the Sb2S3 films decreased with an increase in pH, with values of 1.82-2.03 eV for the crystalline ones. An n-type photo-conductivity of 10-6 Ω-1 cm-1 was obtained for the heated films. The evaluation of these films for solar cell applications using CdS as the window layer gave a Voc of 656 mV and a Jsc of 2.66 mA/cm2 under AM1.5G radiation.

Structural and Optical Properties of PbS Thin Films Deposited by Chemical Bath

2019 ◽  
Vol 397 ◽  
pp. 125-140 ◽  
Author(s):  
Azzeddine Beggas ◽  
Z. Becer ◽  
R. Ahmim ◽  
Mohamed Salah Aida
Keyword(s):  
Thin Films ◽  
Deposition Time ◽  
Optical Band Gap ◽  
Energy Gap ◽  
Lead Nitrate ◽  
Molar Concentration ◽  
Complexing Agent ◽  
Structural And Optical Properties ◽  
Glass Slides ◽  
Crystallite Sizes

The lead sulfur (PbS) as thin films were deposited on ordinary glass slides, for different deposition times ranging from 30 to 90 min, and for different molar concentrations of lead nitrate (0.01, 0.05, 0.075 and 0.1) mol / l, at ambient temperature of 55 ° C, using thiourea and lead nitrate as source of S2- and Pb2+ ions respectively and TEA as complexing agent. For different deposition times, the films grow preferentially along (200) direction. With increase in deposition time, and at fixed molar concentration the transmittance remained less than 30% and the optical band gap value decreases from 1.8 to 1.6 eV, while the crystallite size increases from 21.9 to 27.8 nm. For various molar concentrations of lead nitrate and with time deposition equal to 60 min, it was observed that the films grow preferentially along (111) or (200) directions, which depend on the molar concentration. Increasing the concentration of lead nitrate leads to decrease the energy gap from 1.58 to 1.37 eV and increase the crystallite sizes from 28.0 to 32.6 nm.

scholarly journals Synthesis and characterization of aluminum dope zinc sulfide (Al:ZnS) thin films by chemical bath deposition techniques

2021 ◽  
Vol 8 (2) ◽  
pp. 55-58
Author(s):  
Gemechis Megersa Jigi ◽  
Tizazu Abza ◽  
Asnake Girma
Keyword(s):  
Thin Films ◽  
Chemical Bath Deposition ◽  
Zinc Sulphide ◽  
Ion Concentration ◽  
Window Layer ◽  
Aluminum Concentration ◽  
Complexing Agent ◽  
Optical Absorbance ◽  
Glass Substrates

A well adherent thin films of Aluminum doped zinc sulphide (Al:ZnS) has been deposited on silica glass substrates using acidic chemical bath deposition (CBD) containing zinc acetate, Aluminum Chloride, and thioacetamide. EDTA was used as complexing agent to control the free ion concentration of the thin films. Aluminum concentrations were doped by 2%, 4%, and 6% while keeping other deposition parameters constant as deposited Al:ZnS thin films. The samples were characterized by BrukerD8 diffractometer with cuKα (λ=1.5406A˚) radiation working at 40 mA and 40 kV, JOEL-2300 Analysis Station Scanning electron microscope (SEM), and Perkin Elmer Lambda 950 UV-vis/NIR spectrophotometer. The structural characterization of the samples show that no intense peaks were observed indicating the amorphous nature of the films. The surface morphology studies of as deposited Al:ZnS thin films shown the films were uniform, dense, and composed of spherical shaped grains. EDAX shows the elemental composition of Zn, S, and Al. The ratios of Zn/S in Stoichiometric even though the concentration of Aluminum is increased. Optical absorbance of the films decreased with increase Aluminum concentration. The large band gap makes them good materials for application as a window layer for solar cells.

Novel SnSb2S4 Thin Films Obtained by Chemical Bath Deposition using Tartaric Acid as Complexing Agent for Their Application as Absorber in Solar Cells

MRS Advances ◽  
2019 ◽  
Vol 4 (37) ◽  
pp. 2035-2042 ◽  
Author(s):  
L.A. Rodríguez-Guadarrama ◽  
I.L. Alonso-Lemus ◽  
J. Campos-Álvarez ◽  
J. Escorcia-García
Keyword(s):  
Thin Films ◽  
Solar Cells ◽  
Tartaric Acid ◽  
Chemical Bath Deposition ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Xrd Analysis ◽  
Short Circuit Current Density ◽  
Open Circuit ◽  
Complexing Agent

ABSTRACTTernary Sn-Sb-S thin films with remarkable optical, electrical and structural properties were developed by chemical bath deposition. Tin and antimony chlorides and thioacetamide were used as tin, antimony, and sulfur ion sources, respectively, while tartaric acid was used as a complexing agent. XRD analysis of as-deposited films showed a combination of binary phases of SnS, Sn2S3, and Sb2S3, while after thermal treatment in nitrogen at 400 °C, the films became crystalline showing well-defined reflections of the ternary SnSb2S4. The heating also influenced the morphology, compactness, and thickness of the films. On the other hand, all the films showed an absorption coefficient higher than 104 cm-1, while the optical band gap of the as-deposited film decreased from 1.49 to 1.37 eV after heating at 400 °C. In addition, the photoconductivity of the films prior to heating was of 10-9 Ω-1 cm-1, while after that at 400 °C was of 10-7 Ω-1 cm-1. The evaluation of the ternary film in solar cells gave an open-circuit voltage Voc of 448 mV and short-circuit current density of Jsc of 2.4 mA/cm2.

Absorber Films of Ag2S and AgBiS2 prepared by Chemical Bath Deposition

2002 ◽  
Vol 730 ◽  
Author(s):  
A. Nuñez Rodriguez ◽  
M.T.S. Nair ◽  
P.K. Nair
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Electrical Conductivity ◽  
Silver Nitrate ◽  
Band Gap ◽  
Chemical Bath Deposition ◽  
Optical Band Gap ◽  
Sodium Thiosulfate ◽  
Xrd Pattern ◽  
Glass Substrates

AbstractAg2S thin films of 90 nm to 300 nm in thickness were deposited at 70°C on glass substrates immersed in a bath mixture containing silver nitrate, sodium thiosulfate and dimethylthiourea. When the films are heated in nitrogen at temperatures 200°C to 400°C, crystallinity is improved and XRD pattern similar to that of acanthite is observed. These films possess electrical conductivity of 10-3 (ohm cm)-1, are photoconductive and exhibit an optical band gap of 1.36 eV. When Ag2S thin film is deposited over a thin film of Bi2S3, also obtained by chemical bath deposition from bismuth nitrate, triethanolamine and thioacetamide, and heated at 300°C to 400°C in nitrogen, a ternary compound, AgBiS2 is formed. This material has an electrical conductivity of 5x10-5 (ohm cm)-1, is photoconductive and possesses optical band gap 0.95 eV.

scholarly journals Thin Films with Low Zn Content Prepared by Chemical Bath Deposition

2012 ◽  
Vol 2012 ◽  
pp. 1-5
Author(s):  
Caijuan Tian ◽  
Jingjing Gao ◽  
Wei Li ◽  
Lianghuan Feng ◽  
Jingquan Zhang ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Bath Deposition ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Growth Conditions ◽  
Window Layer ◽  
Film Properties ◽  
Cdte Solar Cells ◽  
Preparation Conditions ◽  
Zn Content

Chemical bath deposition (CBD) was used for the growth of thin films with low Zn content. The influence of preparation conditions, such as pH, temperature, and concentration, on film properties was investigated. The chemical growth mechanism of thin films was analyzed, and optimized growth conditions for the thin films were established. The fill factor and short-circuit current were improved while was used to replace CdS as the window layer in CdTe solar cells.

Preparation and Properties of CdS Thin Films Deposited by Chemical Bath Deposition

2011 ◽  
Vol 110-116 ◽  
pp. 1406-1410
Author(s):  
Hai Yi Li ◽  
Yan Lai Wang ◽  
Shi Liang Ban ◽  
Yi Min Wang
Keyword(s):  
Thin Films ◽  
Chemical Bath Deposition ◽  
Photoelectron Spectroscopy ◽  
Optical Band Gap ◽  
Band Gap Energy ◽  
Film Sample ◽  
X Ray ◽  
Gap Energy ◽  
Cds Thin Films ◽  
Cubic Structure

CdS thin films deposited on glass substrate are prepared by chemical bath deposition using the reaction between CdSO4 and CS (NH2)2. The composition, surface morphology and structural properties of as-deposited and annealed CdS thin films were studied using scanning electron microscopy (SEM), X-ray diffractometry (XRD), energy dispersive spectroscopy (EDS) and X-ray photoelectron spectroscopy (XPS) techniques. The results indicate that the dense, homogeneous polycrystalline CdS thin films with smooth surface can be obtained by chemical bath deposition. The CdS thin films have cubic structure and the ratio of S and Cd is 1:1 in CdS thin films. Optical properties of CdS films were measured with ultraviolet-visible spectrophotometer. The optical band gap energy (Eg) of film sample was found to be 2.31 eV.

Effect of hydrazine hydrate as complexing agent in the synthesis of zinc selenide thin films by chemical bath deposition

2020 ◽  
Vol 693 ◽  
pp. 137707
Author(s):  
D.D. Hile ◽  
H.C. Swart ◽  
S.V. Motloung ◽  
T.E. Motaung ◽  
K.O. Egbo ◽  
...  
Keyword(s):  
Thin Films ◽  
Hydrazine Hydrate ◽  
Zinc Selenide ◽  
Chemical Bath Deposition ◽  
Complexing Agent
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