Study of Grown-In Defects Verses Growth Parameters in GaAs and Al(x)Ga(1-x)AS Epitaxial Films Grown by LPE and MOCVD Techniques.
1990 ◽
Vol 48
(4)
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pp. 2-3
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1990 ◽
Vol 48
(1)
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pp. 308-309
2020 ◽
Vol 56
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pp. 8
1999 ◽
Vol 17
(1)
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pp. 49-52
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Keyword(s):
Keyword(s):
2020 ◽
Vol 13
(2)
◽
pp. 83-92
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