Investigation of Device and Electronic Interactions Associated with GaAs Device Processing.

1985 ◽  
Author(s):  
Harry C. Gatos ◽  
Jacek Lagowski
Keyword(s):  
Electronic Interactions ◽  
Device Processing

Growth kinetics of Al2Cu in an Al-1.5Cu thin film by in Situ TEM

1993 ◽  
Vol 51 ◽  
pp. 1172-1173
Author(s):  
M. Park ◽  
S.J. Krause ◽  
S.R. Wilson
Keyword(s):  
Thin Film ◽  
In Situ Tem ◽  
Collector Plate ◽  
Transmission Electron ◽  
Device Processing ◽  
Corrosion Susceptibility ◽  
Precipitation Phenomena ◽  
Semiconductor Chips ◽  
Kinetics Of

Cu alloying in Al interconnection lines on semiconductor chips improves their resistance to electromigration and hillock growth. Excess Cu in Al can result in the formation of Cu-rich Al2Cu (θ) precipitates. These precipitates can significantly increase corrosion susceptibility due to the galvanic action between the θ-phase and the adjacent Cu-depleted matrix. The size and distribution of the θ-phase are also closely related to the film susceptibility to electromigration voiding. Thus, an important issue is the precipitation phenomena which occur during thermal device processing steps. In bulk alloys, it was found that the θ precipitates can grow via the grain boundary “collector plate mechanism” at rates far greater than allowed by volume diffusion. In a thin film, however, one might expect that the growth rate of a θ precipitate might be altered by interfacial diffusion. In this work, we report on the growth (lengthening) kinetics of the θ-phase in Al-Cu thin films as examined by in-situ isothermal aging in transmission electron microscopy (TEM).

Clustering-Triggered Efficient Room Temperature Phosphorescence from Nonconventional Luminophores

2019 ◽  
Author(s):  
Shuyuan Zheng ◽  
Taiping Hu ◽  
Xin Bin ◽  
Yunzhong Wang ◽  
Yuanping Yi ◽  
...  
Keyword(s):  
Room Temperature ◽  
High Efficiency ◽  
Spin Orbit Coupling ◽  
Design Rationale ◽  
Emission Mechanism ◽  
Room Temperature Phosphorescence ◽  
Electronic Interactions ◽  
Energy Gaps ◽  
Theoretical Results

Pure organic room temperature phosphorescence (RTP) and luminescence from nonconventional luminophores have gained increasing attention. However, it remains challenging to achieve efficient RTP from unorthodox luminophores, on account of the unsophisticated understanding of the emission mechanism. Here we propose a strategy to realize efficient RTP in nonconventional luminophores through incorporation of lone pairs together with clustering and effective electronic interactions. The former promotes spin-orbit coupling and boost the consequent intersystem crossing, whereas the latter narrows energy gaps and stabilizes the triplets, thus synergistically affording remarkable RTP. Experimental and theoretical results of urea and its derivatives verify the design rationale. Remarkably, RTP from thiourea solids with unprecedentedly high efficiency of up to 24.5% is obtained. Further control experiments testify the crucial role of through-space delocalization on the emission. These results would spur the future fabrication of nonconventional phosphors, and moreover should advance understanding of the underlying emission mechanism.<br>

Applications of Energy Beams in Material and Device Processing

1983 ◽  
Vol 23 ◽  
Author(s):  
G.J. Galvin ◽  
L.S. Hung ◽  
J.W. Mayer ◽  
M. Nastasi
Keyword(s):  
Ion Beam ◽  
High Energy ◽  
Ion Beams ◽  
Traditional Role ◽  
Near Surface ◽  
Device Processing ◽  
Composition Modification ◽  
Directed Energy ◽  
Transistor Fabrication

ABSTRACTEnergetic ion beams used outside the traditional role of ion implantation are considered for semiconductor applications involving interface modification for self-aligned silicide contacts, composition modification for formation of buried oxide layers in Si on insulator structures and reduced disorder in high energy ion beam annealing for buried collectors in transistor fabrication. In metals, aside from their use in modification of the composition of near surface regions, energetic ion beams are being investigated for structural modification in crystalline to amorphous transitions. Pulsed beams of photons and electrons are used as directed energy sources in rapid solidification. Here, we consider the role of temperature gradients and impurities in epitaxial growth of silicon.

scholarly journals Electronic interactions between Graphene and cobaltite thin film La0.7Sr0.3CoO3 and its magnetic consequences

2021 ◽  
pp. 100919
Author(s):  
Zied Othmen ◽  
Riadh Othmen ◽  
Kais Daoudi ◽  
Michel Boudard ◽  
Antonella Cavanna ◽  
...  
Keyword(s):  
Thin Film ◽  
Electronic Interactions

Synthesis of rod‐shaped dipolar compounds for the study of long‐range electronic interactions

2021 ◽  
Author(s):  
Jay Chuang ◽  
Chun‐Wei Chang ◽  
Yuan Jay Chang ◽  
Po‐Ting Chou ◽  
Yuh‐Sheng Wen ◽  
...  
Keyword(s):  
Long Range ◽  
Electronic Interactions

scholarly journals Emergent chiral symmetry in a three-dimensional interacting Dirac liquid

2021 ◽  
Vol 2021 (1) ◽  
Author(s):  
András L. Szabó ◽  
Bitan Roy
Keyword(s):  
Fixed Points ◽  
Chiral Symmetry ◽  
Rotational Symmetry ◽  
Three Dimensional ◽  
Spatial Dimension ◽  
Dirac Fermions ◽  
Electronic Interactions ◽  
Emergent Phenomena ◽  
Ordered Phases ◽  
The Stability

Abstract We compute the effects of strong Hubbardlike local electronic interactions on three-dimensional four-component massless Dirac fermions, which in a noninteracting system possess a microscopic global U(1) ⊗ SU(2) chiral symmetry. A concrete lattice realization of such chiral Dirac excitations is presented, and the role of electron-electron interactions is studied by performing a field theoretic renormalization group (RG) analysis, controlled by a small parameter ϵ with ϵ = d−1, about the lower-critical one spatial dimension. Besides the noninteracting Gaussian fixed point, the system supports four quantum critical and four bicritical points at nonvanishing interaction couplings ∼ ϵ. Even though the chiral symmetry is absent in the interacting model, it gets restored (either partially or fully) at various RG fixed points as emergent phenomena. A representative cut of the global phase diagram displays a confluence of scalar and pseudoscalar excitonic and superconducting (such as the s-wave and p-wave) mass ordered phases, manifesting restoration of (a) chiral U(1) symmetry between two excitonic masses for repulsive interactions and (b) pseudospin SU(2) symmetry between scalar or pseudoscalar excitonic and superconducting masses for attractive interactions. Finally, we perturbatively study the effects of weak rotational symmetry breaking on the stability of various RG fixed points.

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