Electric-Current Controlled Liquid Phase Epitaxy of Compound Semiconductors for Microwave Devices.

1979 ◽  
Author(s):  
Lester F. Eastman ◽  
Colin E. C. Wood ◽  
Bart Van Rees
Keyword(s):  
Liquid Phase ◽  
Electric Current ◽  
Liquid Phase Epitaxy ◽  
Compound Semiconductors ◽  
Microwave Devices

Modulation of Growth Rate by Electric Current in Liquid-Phase Epitaxy of 4H-SiC

2013 ◽  
Vol 52 (8R) ◽  
pp. 085503
Author(s):  
Takeshi Mitani ◽  
Masayuki Okamura ◽  
Tetsuo Takahashi ◽  
Naoyoshi Komatsu ◽  
Tomohisa Kato ◽  
...  
Keyword(s):  
Growth Rate ◽  
Liquid Phase ◽  
Electric Current ◽  
Liquid Phase Epitaxy

Growth of 4H-SiC in Current-Controlled Liquid Phase Epitaxy

2013 ◽  
Vol 740-742 ◽  
pp. 3-6 ◽  
Author(s):  
Takeshi Mitani ◽  
Masayuki Okamura ◽  
Tetsuo Takahashi ◽  
Naoyoshi Komatsu ◽  
Tomohisa Kato ◽  
...  
Keyword(s):  
Liquid Phase ◽  
Temperature Gradient ◽  
Electric Current ◽  
Joule Heating ◽  
Liquid Phase Epitaxy ◽  
Negative Polarity ◽  
Growth Speed ◽  
Positive Polarity ◽  
Current Leads ◽  
Dc Current

4H-SiC crystallization from Si-C solution in electric current-controlled liquid phase epitaxy was investigated. The dependence of growth speed on a DC current shows that dissolution/growth is controlled by the electric current without altering temperature gradient in the furnace. Application of an electric current leads to reduction of growth speed with negative polarity and enhancement of growth speed with positive polarity. The variation of the growth speed with a DC current density has been explained by the combination of the effects of electromigration of C solute and Joule heating.

TEM study of very thin InGaAsP layers grown by liquid-phase epitaxy

1990 ◽  
Vol 48 (4) ◽  
pp. 672-673
Author(s):  
N.A. Bert ◽  
A.O. Kosogov
Keyword(s):  
Liquid Phase ◽  
Liquid Phase Epitaxy ◽  
Chemical Vapor ◽  
Growth Conditions ◽  
Dark Field ◽  
Organic Chemical ◽  
Simple Liquid ◽  
Cross Sectional ◽  
Conventional Procedure ◽  
Double Heterostructures

The very thin (<100 Å) InGaAsP layers were grown not only by molecular beam epitaxy and metal-organic chemical vapor deposition but recently also by simple liquid phase epitaxy (LPE) technique. Characterization of their thickness, interfase abruptness and lattice defects is important and requires TEM methods to be used.The samples were InGaAsP/InGaP double heterostructures grown on (111)A GaAs substrate. The exact growth conditions are described in Ref.1. The salient points are that the quarternary layers were being grown at 750°C during a fast movement of substrate and a convection caused in the melt by that movement was eliminated. TEM cross-section specimens were prepared by means of conventional procedure. The studies were conducted in EM 420T and JEM 4000EX instruments.The (200) dark-field cross-sectional imaging is the most appropriate TEM technique to distinguish between individual layers in 111-v semiconductor heterostructures.

Silicon layers grown over SiO2 by liquid phase epitaxy: Electron Microscopical study

1990 ◽  
Vol 48 (4) ◽  
pp. 566-567
Author(s):  
F. Banhart ◽  
F.O. Phillipp ◽  
R. Bergmann ◽  
E. Czech ◽  
M. Konuma ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Liquid Phase ◽  
Plasma Etching ◽  
Liquid Phase Epitaxy ◽  
Three Dimensional ◽  
Microscopical Study ◽  
Sample Temperature ◽  
Structural Defects ◽  
Si Substrates ◽  
Etched Surface

Defect-free silicon layers grown on insulators (SOI) are an essential component for future three-dimensional integration of semiconductor devices. Liquid phase epitaxy (LPE) has proved to be a powerful technique to grow high quality SOI structures for devices and for basic physical research. Electron microscopy is indispensable for the development of the growth technique and reveals many interesting structural properties of these materials. Transmission and scanning electron microscopy can be applied to study growth mechanisms, structural defects, and the morphology of Si and SOI layers grown from metallic solutions of various compositions.The treatment of the Si substrates prior to the epitaxial growth described here is wet chemical etching and plasma etching with NF3 ions. At a sample temperature of 20°C the ion etched surface appeared rough (Fig. 1). Plasma etching at a sample temperature of −125°C, however, yields smooth and clean Si surfaces, and, in addition, high anisotropy (small side etching) and selectivity (low etch rate of SiO2) as shown in Fig. 2.

Indium phosphide and quaternary doping superlattices grown by liquid-phase epitaxy

1987 ◽  
Vol 23 (7) ◽  
pp. 324 ◽  
Author(s):  
P.D. Greene ◽  
A.D. Prins ◽  
D.J. Dunstan ◽  
A.R. Adams
Keyword(s):  
Liquid Phase ◽  
Indium Phosphide ◽  
Liquid Phase Epitaxy
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