Monte Carlo studies of hot‐electron energy distribution in thin insulating films. I. Constant mean free path and a one‐dimensional simulation

1976 ◽  
Vol 47 (5) ◽  
pp. 2103-2112 ◽  
Author(s):  
S. Baidyaroy ◽  
M. A. Lampert ◽  
B. Zee ◽  
Ramon U. Martinelli
Keyword(s):  
Monte Carlo ◽  
Energy Distribution ◽  
Free Path ◽  
Electron Energy ◽  
Mean Free Path ◽  
Hot Electron ◽  
One Dimensional ◽  
Insulating Films ◽  
Monte Carlo Studies ◽  
Dimensional Simulation

Hot Electron Energy Distribution in One-Dimensional Cannonball Target at 10.6 µm Laser Wavelength

1984 ◽  
Vol 23 (Part 2, No. 7) ◽  
pp. L445-L448 ◽  
Author(s):  
Kiyohisa Terai ◽  
Hiroyuki Daido ◽  
Masayuki Fujita ◽  
Hiroaki Nishimura ◽  
Kunioki Mima ◽  
...  
Keyword(s):  
Energy Distribution ◽  
Electron Energy ◽  
Laser Wavelength ◽  
Hot Electron ◽  
Electron Energy Distribution ◽  
One Dimensional

DETERMINATION OF THE MEAN FREE PATH OF SLOW ELECTRONS BY THE MEASUREMENT OF BACK-DIFFUSION IN HELIUM AND ARGON

1965 ◽  
Vol 43 (3) ◽  
pp. 422-431 ◽  
Author(s):  
O. J. Orient
Keyword(s):  
Energy Distribution ◽  
Free Path ◽  
Electron Energy ◽  
Field Intensity ◽  
Mean Free Path ◽  
Back Diffusion ◽  
Test Device ◽  
The Mean ◽  
Slow Electrons

In the theoretical examination of back-diffusion Varney found a relationship between the extent of the back-diffusion of electrons starting from the cathode and the distance to the cathode. When adequate conditions are ensured the dependence of back-diffusion on distance permits the determination of the mean free path of the electrons. A test device has been developed to measure back-diffusion as a function of the distance to the cathode, for electrons that have an energy distribution corresponding to the specified pressure and the field intensity. From the dependence on distance, mean free paths for helium and argon gases in the range from X/p = 0.5 volt/cm. mm Hg to X/p = 5 volts/cm. mm Hg have been determined. The results are in fair accordance with the mean free paths computed by Barbiere from electron-energy distribution values. Variances have been found, however, with Townsend's and Bailey's data, particularly in the case of argon, where the free path of electrons depends greatly on velocity.

Estimation of Nanometer-Sized EB Patterning Using Energy Deposition Distribution in Monte Carlo Simulation

2011 ◽  
Vol 497 ◽  
pp. 127-132 ◽  
Author(s):  
Hui Zhang ◽  
Takuro Tamura ◽  
You Yin ◽  
Sumio Hosaka
Keyword(s):  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Electron Beam ◽  
Energy Distribution ◽  
Electron Energy ◽  
Electron Beam Lithography ◽  
Energy Deposition ◽  
Si Substrate ◽  
Positive Resist

We have studied on theoretical electron energy deposition in thin resist layer on Si substrate for electron beam lithography. We made Monte Carlo simulation to calculate the energy distribution and to consider formation of nanometer sized pattern regarding electron energy, resist thickness and resist type. The energy distribution in 100 nm-thick resist on Si substrate were calculated for small pattern. The calculations show that 4 nm-wide pattern will be formed when resist thickness is less than 30 nm. Furthermore, a negative resist is more suitable than positive resist by the estimation of a shape of the energy distribution.

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