THE INITIAL GROWTH OF A SPHERICAL EXPLOSION IN SEA WATER

1957 ◽  
Author(s):  
D.K. AI ◽  
M. HOLT
1962 ◽  
Vol 5 (4) ◽  
pp. 426 ◽  
Author(s):  
S. A. Berger ◽  
M. Holt

HortScience ◽  
1999 ◽  
Vol 34 (2) ◽  
pp. 259-264 ◽  
Author(s):  
J.M.S. Scholberg ◽  
S.J. Locascio

Although the effects of salinity on yield of tomato (Lycopersicon esculentum Mill.) grown under arid and semiarid conditions are well known, little information is available on the effects of salinity on crops grown in more humid conditions. In Florida, availability of high-quality water for irrigation may be reduced because of increased domestic consumption and sea water intrusion. Two greenhouse studies were conducted to determine the influence of irrigation system and water quantity and quality on the growth of tomato and snap bean (Phaseolus vulgaris L.). Bean plant heights and weights were greater with drip irrigation than with subirrigation. Bean seed germination percentage, plant height, and shoot weight decreased linearly with an increase in electrical conductivity of irrigation water (ECi) from 1 to 4 dS·m-1. Tomato leaf water potential and plant height decreased linearly with increasing salinity. Tomato stem and leaf weights were greatest at the intermediate salinity (2 dS·m-1) during initial growth, and stem weights decreased linearly with increased salinity during flowering. With drip irrigation, concentration of N for both crops decreased and concentration of P increased with an increase in water application from 0.75 to 1.5 times the estimated evapotranspiration rate (ETa). Tomato and bean tissue Na concentrations increased linearly with increased salinity. Total fruit yield and average fruit weight decreased linearly in tomato, and marketable fruit yield decreased quadratically with increased salinity.


Author(s):  
Yoshichika Bando ◽  
Takahito Terashima ◽  
Kenji Iijima ◽  
Kazunuki Yamamoto ◽  
Kazuto Hirata ◽  
...  

The high quality thin films of high-Tc superconducting oxide are necessary for elucidating the superconducting mechanism and for device application. The recent trend in the preparation of high-Tc films has been toward “in-situ” growth of the superconducting phase at relatively low temperatures. The purpose of “in-situ” growth is to attain surface smoothness suitable for fabricating film devices but also to obtain high quality film. We present the investigation on the initial growth manner of YBCO by in-situ reflective high energy electron diffraction (RHEED) technique and on the structural and superconducting properties of the resulting ultrathin films below 100Å. The epitaxial films have been grown on (100) plane of MgO and SrTiO, heated below 650°C by activated reactive evaporation. The in-situ RHEED observation and the intensity measurement was carried out during deposition of YBCO on the substrate at 650°C. The deposition rate was 0.8Å/s. Fig. 1 shows the RHEED patterns at every stage of deposition of YBCO on MgO(100). All the patterns exhibit the sharp streaks, indicating that the film surface is atomically smooth and the growth manner is layer-by-layer.


Author(s):  
Xianghong Tong ◽  
Oliver Pohland ◽  
J. Murray Gibson

The nucleation and initial stage of Pd2Si crystals on Si(111) surface is studied in situ using an Ultra-High Vacuum (UHV) Transmission Electron Microscope (TEM). A modified JEOL 200CX TEM is used for the study. The Si(111) sample is prepared by chemical thinning and is cleaned inside the UHV chamber with base pressure of 1x10−9 τ. A Pd film of 20 Å thick is deposited on to the Si(111) sample in situ using a built-in mini evaporator. This room temperature deposited Pd film is thermally annealed subsequently to form Pd2Si crystals. Surface sensitive dark field imaging is used for the study to reveal the effect of surface and interface steps.The initial growth of the Pd2Si has three stages: nucleation, growth of the nuclei and coalescence of the nuclei. Our experiments shows that the nucleation of the Pd2Si crystal occurs randomly and almost instantaneously on the terraces upon thermal annealing or electron irradiation.


1919 ◽  
Vol 87 (2257supp) ◽  
pp. 211-211
Author(s):  
Paul T. Bruhl
Keyword(s):  

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