Low Density Proppant in Slickwater Applications Improves Reservoir Contact and Fracture Complexity - A Permian Basin Case History

2017 ◽  
Author(s):  
Kale Jackson ◽  
Olatunji Orekha
Keyword(s):  
Case History ◽  
Low Density ◽  
Permian Basin ◽  
Fracture Complexity

Foamed Conventional Lightweight Cement Slurry for Ultra-Low Density and Low ECDs Solves Loss-Circulation Problem Across Coal Formations: A Case History

2005 ◽  
Author(s):  
Tim W. Marriott ◽  
James Edward Griffith ◽  
Glen Fyten ◽  
Colin Mallett ◽  
Gregory Anthony Szutiak
Keyword(s):  
Case History ◽  
Low Density ◽  
Cement Slurry ◽  
Circulation Problem

A Paradigm Shift in Drilling Frac Plugs in Extended Laterals – A Permian Basin Case History

2020 ◽  
Author(s):  
Benjamin Krane ◽  
Matthew DeFriend ◽  
Heberto Garza ◽  
Joseph Frantz ◽  
Matt Tourigny ◽  
...  
Keyword(s):  
Case History ◽  
Paradigm Shift ◽  
Permian Basin

Application of Improved Voltage Compensation in the SEM to Imaging of Organic Materials

1973 ◽  
Vol 31 ◽  
pp. 444-445
Author(s):  
P.J. Killingworth ◽  
M. Warren
Keyword(s):  
Electron Beam ◽  
Organic Materials ◽  
Operating Parameters ◽  
Low Density ◽  
Beam Diameter ◽  
Incident Electron Beam ◽  
Specimen Material ◽  
Voltage Compensation ◽  
Selection Of ◽  
Scanning Electron

Ultimate resolution in the scanning electron microscope is determined not only by the diameter of the incident electron beam, but by interaction of that beam with the specimen material. Generally, while minimum beam diameter diminishes with increasing voltage, due to the reduced effect of aberration component and magnetic interference, the excited volume within the sample increases with electron energy. Thus, for any given material and imaging signal, there is an optimum volt age to achieve best resolution.In the case of organic materials, which are in general of low density and electric ally non-conducting; and may in addition be susceptible to radiation and heat damage, the selection of correct operating parameters is extremely critical and is achiev ed by interative adjustment.

Quantitative defect studies in semiconductor TEM samples prepared by low angle ion milling

1995 ◽  
Vol 53 ◽  
pp. 512-513
Author(s):  
L. Mulestagno ◽  
J.C. Holzer ◽  
P. Fraundorf
Keyword(s):  
Sample Preparation ◽  
Milling Time ◽  
High Density ◽  
Low Density ◽  
Ion Milling ◽  
High Quality ◽  
Variable Angle ◽  
Major Disadvantage ◽  
Induced Defects

Due to the wealth of information, both analytical and structural that can be obtained from it TEM always has been a favorite tool for the analysis of process-induced defects in semiconductor wafers. The only major disadvantage has always been, that the volume under study in the TEM is relatively small, making it difficult to locate low density defects, and sample preparation is a somewhat lengthy procedure. This problem has been somewhat alleviated by the availability of efficient low angle milling.Using a PIPS® variable angle ion -mill, manufactured by Gatan, we have been consistently obtaining planar specimens with a high quality thin area in excess of 5 × 104 μm2 in about half an hour (milling time), which has made it possible to locate defects at lower densities, or, for defects of relatively high density, obtain information which is statistically more significant (table 1).

Sign in / Sign up

Export Citation Format

Share Document