scholarly journals Synthesis of faceted crystal grains of titanium nitride using titanium oxides, boron nitride, and sodium

2020 ◽  
Vol 128 (7) ◽  
pp. 364-367
Author(s):  
Toru SEKIYA ◽  
Takahiro YAMADA ◽  
Hisanori YAMANE
Keyword(s):  
Boron Nitride ◽  
Titanium Nitride ◽  
Titanium Oxides ◽  
Crystal Grains

Manufacture of Titanium Nitride by Carbothermal Reduction of Titanium Oxides

1991 ◽  
Vol 34-36 ◽  
pp. 657-661
Author(s):  
G.V. White ◽  
M.J. Ryan ◽  
Kenneth J.D. MacKenzie ◽  
J.H. Johnston
Keyword(s):  
Titanium Nitride ◽  
Carbothermal Reduction ◽  
Titanium Oxides

Structural transformations of the wurtzitic boron nitride-titanium nitride composition at high pressure and temperature

2011 ◽  
Vol 33 (5) ◽  
pp. 327-332 ◽  
Author(s):  
V. M. Volkogon ◽  
G. S. Oleinik ◽  
S. K. Avramchuk ◽  
A. V. Stepanenko ◽  
A. V. Kotko ◽  
...  
Keyword(s):  
High Pressure ◽  
Boron Nitride ◽  
Titanium Nitride ◽  
Structural Transformations ◽  
High Pressure And Temperature ◽  
Wurtzitic Boron Nitride

Formation of titanium nitride by mechanical milling and isothermal annealing of titanium and boron nitride

2005 ◽  
Vol 391 (1-2) ◽  
pp. 77-81 ◽  
Author(s):  
Z.H. Ding ◽  
B. Yao ◽  
L.X. Qiu ◽  
S.Z. Bai ◽  
X.Y. Guo ◽  
...  
Keyword(s):  
Boron Nitride ◽  
Titanium Nitride ◽  
Mechanical Milling ◽  
Isothermal Annealing

Synthesis of sub-millimeter single-crystal grains of aligned hexagonal boron nitride on an epitaxial Ni film

Nanoscale ◽  
2019 ◽  
Vol 11 (31) ◽  
pp. 14668-14675
Author(s):  
Alexandre Budiman Taslim ◽  
Hideaki Nakajima ◽  
Yung-Chang Lin ◽  
Yuki Uchida ◽  
Kenji Kawahara ◽  
...  
Keyword(s):  
Boron Nitride ◽  
Single Crystal ◽  
Growth Mechanism ◽  
Hexagonal Boron Nitride ◽  
Cvd Growth ◽  
Crystal Grains

CVD growth of epitaxially aligned, sub-millimeter h-BN grains on Ni(111)/sapphire is demonstrated with detailed investigation of the h-BN growth mechanism.

Development of Crystallinity in Turbostratic Boron Nitride Derived from Polymeric Precursors

1991 ◽  
Vol 49 ◽  
pp. 954-955
Author(s):  
X. Qiu ◽  
A. K. Datye ◽  
T. T. Borek ◽  
R. T. Paine
Keyword(s):  
Thermal Treatment ◽  
Boron Nitride ◽  
Diffraction Pattern ◽  
Polymeric Precursors ◽  
Polymer Precursors ◽  
Diffuse Ring

Boron nitride derived from polymer precursors is of great interest for applications such as fibers, coatings and novel forms such as aerogels. The BN is prepared by the polymerization of functionalized borazine and thermal treatment in nitrogen at 1200°C. The BN powders obtained by this route are invariably trubostratic wherein the sheets of hexagonal BN are randomly oriented to yield the so-called turbostratic modification. Fib 1a and 1b show images of BN powder with the corresponding diffraction pattern in fig. 1c. The (0002) reflection from BN is seen as a diffuse ring with occational spots that come from crystals of BN such as those shown in fig. 1b. The (0002) lattice fringes of BN seen in these powders are the most characteristic indication of the crystallinity of the BN.

Evolution of the microstructure of Cu(Ti)/SiO2 layers annealed in NH3

1995 ◽  
Vol 53 ◽  
pp. 452-453
Author(s):  
J. Liu ◽  
N. D. Theodore ◽  
D. Adams ◽  
S. Russell ◽  
T. L. Alford ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Titanium Nitride ◽  
Large Scale ◽  
Standard Procedure ◽  
Alloy Film ◽  
Electron Beam Evaporation ◽  
Copper Metallization ◽  
Nominal Composition ◽  
Ti Alloy ◽  
Thermally Grown

Copper-based metallization has recently attracted extensive research because of its potential application in ultra-large-scale integration (ULSI) of semiconductor devices. The feasibility of copper metallization is, however, limited due to its thermal stability issues. In order to utilize copper in metallization systems diffusion barriers such as titanium nitride and other refractory materials, have been employed to enhance the thermal stability of copper. Titanium nitride layers can be formed by annealing Cu(Ti) alloy film evaporated on thermally grown SiO2 substrates in an ammonia ambient. We report here the microstructural evolution of Cu(Ti)/SiO2 layers during annealing in NH3 flowing ambient.The Cu(Ti) films used in this experiment were prepared by electron beam evaporation onto thermally grown SiO2 substrates. The nominal composition of the Cu(Ti) alloy was Cu73Ti27. Thermal treatments were conducted in NH3 flowing ambient for 30 minutes at temperatures ranging from 450°C to 650°C. Cross-section TEM specimens were prepared by the standard procedure.

Structural relationships in the synthesis of cubic boron nitride thin films by ion-assisted deposition

1994 ◽  
Vol 52 ◽  
pp. 638-639
Author(s):  
D. L. Medlin ◽  
T. A. Friedmann ◽  
P. B. Mirkarimi ◽  
M. J. Mills ◽  
K. F. McCarty
Keyword(s):  
Boron Nitride ◽  
Ion Irradiation ◽  
Cubic Boron Nitride ◽  
Film Stress ◽  
Bonded Phases ◽  
Structural Relationships ◽  
Precursor Material ◽  
Pressure Synthesis ◽  
Microstructure Of The Material

The allotropes of boron nitride include two sp2-bonded phases with hexagonal and rhombohedral structures (hBN and rBN) and two sp3-bonded phases with cubic (zincblende) and hexagonal (wurtzitic) structures (cBN and wBN) (Fig. 1). Although cBN is synthesized in bulk form by conversion of hBN at high temperatures and pressures, low-pressure synthesis of cBN as a thin film is more difficult and succeeds only when the growing film is simultaneously irradiated with a high flux of ions. Only sp2-bonded material, which generally has a disordered, turbostratic microstructure (tBN), will form in the absence of ion-irradiation. The mechanistic role of the irradiation is not well understood, but recent work suggests that ion-induced compressive film stress may induce the transformation to cBN.Typically, BN films are deposited at temperatures less than 1000°C, a regime for which the structure of the sp2-bonded precursor material dictates the phase and microstructure of the material that forms from conventional (bulk) high pressure treatment.

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