scholarly journals Low temperature MOCVD of Ta2O5 dielectric thin films from Ta[NC(CH3)3][OC(CH3)3]3 and O2

2016 ◽  
Vol 124 (5) ◽  
pp. 510-514 ◽  
Author(s):  
Hirokazu CHIBA ◽  
Ken-ichi TADA ◽  
Taishi FURUKAWA ◽  
Toshiki YAMAMOTO ◽  
Tadahiro YOTSUYA ◽  
...  
Keyword(s):  
Thin Films ◽  
Low Temperature ◽  
Dielectric Thin Films

Low Temperature Processing of Si-Based Dielectric Thin Films

2019 ◽  
Vol 35 (4) ◽  
pp. 241-257
Author(s):  
Pooran Joshi ◽  
A. Tolis Voutsas ◽  
John Hartzell
Keyword(s):  
Thin Films ◽  
Low Temperature ◽  
Dielectric Thin Films ◽  
Low Temperature Processing

Low-temperature solution-based fabrication of high-k HfO2 dielectric thin films via combustion process

2016 ◽  
Vol 81 (3) ◽  
pp. 662-668 ◽  
Author(s):  
Junhui Weng ◽  
Weibo Chen ◽  
Wei Xia ◽  
Jian Zhang ◽  
Yulong Jiang ◽  
...  
Keyword(s):  
Thin Films ◽  
Low Temperature ◽  
Combustion Process ◽  
Dielectric Thin Films ◽  
High K ◽  
Temperature Solution

Low-temperature sol-gel ZrHfO2-PMMA hybrid dielectric thin-films for metal oxide TFTs

2018 ◽  
Vol 502 ◽  
pp. 152-158 ◽  
Author(s):  
M.G. Syamala Rao ◽  
M.A. Pacheco-Zuñiga ◽  
L.A. Garcia-Cerda ◽  
G. Gutiérrez-Heredia ◽  
J.A. Torres Ochoa ◽  
...  
Keyword(s):  
Thin Films ◽  
Low Temperature ◽  
Metal Oxide ◽  
Sol Gel ◽  
Dielectric Thin Films ◽  
Oxide Tfts

Observation by HVEM of the martensite transformation and the superconducting transition in Nb3Sn

1988 ◽  
Vol 46 ◽  
pp. 788-789
Author(s):  
M. A. Kirk ◽  
M. C. Baker ◽  
B. J. Kestel ◽  
H. W. Weber
Keyword(s):  
Thin Films ◽  
Low Temperature ◽  
Superconducting State ◽  
Martensite Transformation ◽  
Sputter Deposition ◽  
Diffusion Reaction ◽  
Solute Diffusion ◽  
Superconducting Transition ◽  
Twin Boundaries ◽  
Martensite Structure

It is well known that a number of compound superconductors with the A15 structure undergo a martensite transformation when cooled to the superconducting state. Nb3Sn is one of those compounds that transforms, at least partially, from a cubic to tetragonal structure near 43 K. To our knowledge this transformation in Nb3Sn has not been studied by TEM. In fact, the only low temperature TEM study of an A15 material, V3Si, was performed by Goringe and Valdre over 20 years ago. They found the martensite structure in some foil areas at temperatures between 11 and 29 K, accompanied by faults that consisted of coherent twin boundaries on {110} planes. In pursuing our studies of irradiation defects in superconductors, we are the first to observe by TEM a similar martensite structure in Nb3Sn.Samples of Nb3Sn suitable for TEM studies have been produced by both a liquid solute diffusion reaction and by sputter deposition of thin films.

Finite-Element Modeling and Quantitative Measurement Using Scanning Microwave Microscopy to Characterize Dielectric Films

2018 ◽  
Author(s):  
K. A. Rubin ◽  
W. Jolley ◽  
Y. Yang
Keyword(s):  
Thin Films ◽  
Dielectric Film ◽  
Dielectric Constants ◽  
Dielectric Films ◽  
Silicon Substrates ◽  
Fem Modeling ◽  
Dielectric Thin Films ◽  
Microwave Microscopy ◽  
Scanning Microwave Microscopy ◽  
Low K

Abstract Scanning Microwave Impedance Microscopy (sMIM) can be used to characterize dielectric thin films and to quantitatively discern film thickness differences. FEM modeling of the sMIM response provides understanding of how to connect the measured sMIM signals to the underlying properties of the dielectric film and its substrate. Modeling shows that sMIM can be used to characterize a range of dielectric film thicknesses spanning both low-k and medium-k dielectric constants. A model system consisting of SiO2 thin films of various thickness on silicon substrates is used to illustrate the technique experimentally.

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