scholarly journals Orientation control of α-Al2O3 films prepared by laser chemical vapor deposition using a diode laser

2010 ◽  
Vol 118 (1377) ◽  
pp. 366-369 ◽  
Author(s):  
Yu YOU ◽  
Akihiko ITO ◽  
Rong TU ◽  
Takashi GOTO
Keyword(s):  
Chemical Vapor Deposition ◽  
Diode Laser ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Laser Chemical Vapor Deposition ◽  
Orientation Control ◽  
Α Al2o3 ◽  
Al2o3 Films

Effect of NH3 Atmosphere on Preparation of Al2O3-AlN Composite Film by Laser CVD

2011 ◽  
Vol 484 ◽  
pp. 172-176
Author(s):  
Yu You ◽  
Akihiko Ito ◽  
Rong Tu ◽  
Takashi Goto
Keyword(s):  
Phase Composition ◽  
Chemical Vapor Deposition ◽  
Composite Film ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Crystal Phase ◽  
Laser Chemical Vapor Deposition ◽  
Α Al2o3 ◽  
Laser Cvd ◽  
Source Materials

Al2O3-AlN composite film was first prepared by laser chemical vapor deposition (laser CVD) using aluminum acetylacetonate (Al(acac)3) and ammonia (NH3) as source materials. The effects of NH3 on the crystal phase, composition and microstructure were investigated. The crystal phase changed from α-Al2O3 to AlN gradually with increasing the mole ratio of NH3 to Ar. Al2O3-AlN composite film was obtained at NH3/Ar ratio ranged from 0.09 to 0.16 (Tdep = 862–887 K), and AlN granular grains were embedded in between α-Al2O3 polyhedral grains.

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