scholarly journals Thermoelectric Properties of Zn0.98Al0.02O Thin Films Prepared by RF Magnetron Sputtering

2004 ◽  
Vol 112 (1306) ◽  
pp. 327-331 ◽  
Author(s):  
Mika UENO ◽  
Yutaka YOSHIDA ◽  
Yoshiaki TAKAI ◽  
Masataka YAMAGUCHI
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Thermoelectric Properties ◽  
Rf Magnetron Sputtering

Comparison of thermoelectric properties of flexible bismuth telluride thin films deposited via DC and RF magnetron sputtering

2019 ◽  
Vol 552 (1) ◽  
pp. 64-72
Author(s):  
Piya Jitthamapirom ◽  
Pornsiri Wanarattikan ◽  
Pilaipon Nuthongkum ◽  
Rachsak Sakdanuphab ◽  
Aparporn Sakulkalavek
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Thermoelectric Properties ◽  
Bismuth Telluride ◽  
Rf Magnetron Sputtering

THERMOELECTRIC AND MAGNETO-THERMOELECTRIC PROPERTIES OF Ga-DOPED ZnO THIN FILMS BY RF MAGNETRON SPUTTERING

2014 ◽  
Vol 21 (03) ◽  
pp. 1450033 ◽  
Author(s):  
H. LIU ◽  
L. FANG ◽  
F. WU ◽  
D. X. TIAN ◽  
W. J. LI ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Thin Films ◽  
Magnetron Sputtering ◽  
Thermoelectric Properties ◽  
Rf Magnetron Sputtering ◽  
Doping Content ◽  
Glass Substrates ◽  
Seebeck Coefficients ◽  
Maximum Value ◽  
Ga Doping

Zn (1-x) Ga x O thin films (x = 0.01, 0.03, 0.05, 0.07 named as GZO1, GZO2, GZO3, GZO4, respectively) were deposited on glass substrates by RF magnetron sputtering. The crystal structure, electrical, thermoelectric and magneto-thermoelectric properties of GZO films were investigated. It is found that all the GZO films are polycrystalline and preferentially oriented in the c-axis. The electrical resistivity of GZO films decreased first with increasing Ga doping content before it reached a minimum at x = 0.05, and then increased with further increasing Ga doping content. The magnetic fields (B) ranging from 0 to 1.5 T are perpendicularly applied to the films to study the magneto-thermoelectric properties. It is observed that the absolute values of Seebeck coefficients (|S|) of GZO1, GZO2, GZO3 show marked variation with magnetic field and obtain the maximum value at B = 0.5 T. Whereas the |S| value of GZO4 fluctuates slightly with magnetic field and reaches its peak at B = 1.0 T. The magneto-thermoelectric properties are analyzed and we propose that this behavior is mainly attributed to the effect of magnetic field on the electron transport.

scholarly journals Influence of thickness and microstructure on thermoelectric properties of Mg-doped CuCrO2 delafossite thin films deposited by RF-magnetron sputtering

2018 ◽  
Vol 455 ◽  
pp. 244-250 ◽  
Author(s):  
Inthuga Sinnarasa ◽  
Yohann Thimont ◽  
Lionel Presmanes ◽  
Corine Bonningue ◽  
Antoine Barnabé ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Thermoelectric Properties ◽  
Rf Magnetron Sputtering ◽  
Mg Doped

Single Crystal, High Band Gap CdS Thin Films Grown by RF Magnetron Sputtering in Argon Atmosphere for Solar Cell Applications

2018 ◽  
Vol 10 (3) ◽  
pp. 03005-1-03005-6 ◽  
Author(s):  
Rupali Kulkarni ◽  
◽  
Amit Pawbake ◽  
Ravindra Waykar ◽  
Ashok Jadhawar ◽  
...  
Keyword(s):  
Thin Films ◽  
Solar Cell ◽  
Magnetron Sputtering ◽  
Single Crystal ◽  
Band Gap ◽  
Rf Magnetron Sputtering ◽  
Argon Atmosphere ◽  
Cds Thin Films ◽  
High Band
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