scholarly journals Thermal Conductivity and Temperature Dependence of Electrical Resistivity of Al4SiC4-SiC Sintered Bodies Prepared by Pulse Electronic Current Sintering

2003 ◽  
Vol 111 (1295) ◽  
pp. 466-470 ◽  
Author(s):  
Koji INOUE ◽  
Satoshi MORI ◽  
Akira YAMAGUCHI
RSC Advances ◽  
2018 ◽  
Vol 8 (44) ◽  
pp. 24893-24899 ◽  
Author(s):  
Gui-Cang He ◽  
Heng Lu ◽  
Xian-Zi Dong ◽  
Yong-Liang Zhang ◽  
Jie Liu ◽  
...  

Investigation of temperature dependence of electrical resistivity, thermal conductivity and Lorenz number of silver nanowire, and design of a thermometer.


2007 ◽  
Vol 26-28 ◽  
pp. 1059-1062 ◽  
Author(s):  
Il Ho Kim ◽  
Jung Il Lee ◽  
G.S. Choi ◽  
J.S. Kim

Thermal, electrical and mechanical properties of high purity niobium and tantalum refractory rare metals were investigated to evaluate the physical purity. Higher purity niobium and tantalum metals showed lower hardness due to smaller solution hardening effect. Temperature dependence of electrical resistivity showed a typical metallic behavior. Remarkable decrease in electrical resistivity was observed for a high purity specimen at low temperature. However, thermal conductivity increased for a high purity specimen, and abrupt increase in thermal conductivity was observed at very low temperature, indicating typical temperature dependence of thermal conductivity for high purity metals. It can be known that reduction of electron-phonon scattering leads to increase in thermal conductivity of high purity niobium and tantalum metals at low temperature.


2007 ◽  
Vol 124-126 ◽  
pp. 1019-1022 ◽  
Author(s):  
K.W. Jang ◽  
Il Ho Kim ◽  
Jung Il Lee ◽  
Good Sun Choi

Non-stoichiometric Zn4-xSb3 compounds with x=0~0.5 were prepared by vacuum melting at 1173K and annealing solidified ingots at 623K. Electrical resistivity and Seebeck coefficient at 450K increased from 1.8cm and 145K-1 for Zn4Sb3(x=0) to 56.2cm 350K-1 for Zn3.5Sb3(x=0.5) due to the decrease of the carrier concentration. Hall mobility and carrier concentration was 31.5cm2V-1s-1 and 1.32X1020cm-3 for Zn4Sb3 and 70cm2V-1s-1 and 2.80X1018cm-3 for Zn3.5Sb3. Electrical resistivity of Zn4-xSb3 with x=0~0.2 showed linearly increasing temperature dependence, whereas those of Zn4-xSb3 with x=0.3~0.5 above 450 K tended to decrease. Thermal conductivity of Zn4Sb3 was 8.5mWcm-1K-1 at room temperature and that of Zn4-xSb3 with x≥0.3 was around 11mWcm-1K-1. Maximum ZT of Zn4Sb3 was obtained around 1.3 at 600K. Zn4Sb3 with x=0.3~0.5 showed very small value of ZT=0.2~0.3.


2005 ◽  
Vol 20 (11) ◽  
pp. 3082-3087 ◽  
Author(s):  
M. Shikano ◽  
R. Funahashi ◽  
M. Kitawaki

Agglomerates of aligned crystals of CaxCo2O4 with a layer of CoO2 were grown using a chloride flux technique, and their thermoelectric properties in air were determined. The agglomerates take the form of a very thin flakelike cluster of crystals with a typical size of almost 3 × 2 × 0.07 mm. The values of thermoelectric power along the ab-plane are larger than 200 μV K−1 at temperatures above 873 K and reach almost 300 μV K−1 at 973 K. The temperature dependence of the electrical resistivity along the ab-plane shows bends around 450 and 825 K, and the ln ρab−T−1 curve followed an Arrhenius-type behavior below 450 K. Temperature dependence of thermal conductivity indicated that stacking faults along the c axis induce phonon scattering like that in a misfit-layered structure. The effect of the CoO2 layer on thermoelectric performance is discussed in comparison with related compounds.


2010 ◽  
Vol 658 ◽  
pp. 17-20 ◽  
Author(s):  
Jae Yong Jung ◽  
Kwan Ho Park ◽  
Soon Chul Ur ◽  
Il Ho Kim

In-filled CoSb3 skutterudites (InzCo4Sb12) were prepared and the filling effects on the thermoelectric and transport properties were examined. Seebeck coefficient and Hall coefficient confirmed that all the samples showed n-type conductivity. Temperature dependence of the electrical resistivity suggested that InzCo4Sb12 is a highly degenerate semiconducting material. The thermal conductivity was considerably reduced by In filling and the lattice contribution was dominant.


1979 ◽  
Vol 57 (8) ◽  
pp. 1216-1223 ◽  
Author(s):  
J. G. Cook

The electrical resistivity ρ, thermal conductivity κ, and thermoelectric power S have been measured for two bare K specimens between 80 and 330 K. The data fully support the main conclusions of an earlier, preliminary study by Cook and Laubitz. The Lorenz function L = κρ/T does not approach the Sommerfeld value L0 with increasing temperature. Both the magnitude and temperature dependence of L–L0 indicate the presence of an added term Wee in the thermal resistivity, due to electron–electron scattering. Such scattering also affects S. It is shown that the data for K, together with published values of B = Wee/T for Na, Rb, and the noble metals, form a consistent picture of electron–electron scattering in the monovalent metals above the Debye temperature.


2014 ◽  
Vol 5 (3) ◽  
pp. 982-992 ◽  
Author(s):  
M AL-Jalali

Resistivity temperature – dependence and residual resistivity concentration-dependence in pure noble metals(Cu, Ag, Au) have been studied at low temperatures. Dominations of electron – dislocation and impurity, electron-electron, and electron-phonon scattering were analyzed, contribution of these mechanisms to resistivity were discussed, taking into consideration existing theoretical models and available experimental data, where some new results and ideas were investigated.


Sign in / Sign up

Export Citation Format

Share Document