scholarly journals Effect of UV-Irradiation on Crystallization and Morphology of Zinc Oxide Films Prepared by Chemical Solution Deposition.

2001 ◽  
Vol 109 (1265) ◽  
pp. 1-3 ◽  
Author(s):  
Edi SUKUR ◽  
Shin NISHIYAMA ◽  
Takeo HATTORI
Keyword(s):  
Zinc Oxide ◽  
Uv Irradiation ◽  
Chemical Solution Deposition ◽  
Oxide Films ◽  
Chemical Solution ◽  
Solution Deposition ◽  
Zinc Oxide Films

Study on chemical solution deposition of aluminum-doped zinc oxide films

2010 ◽  
Vol 505 (2) ◽  
pp. 434-442 ◽  
Author(s):  
Gang Li ◽  
Xuebin Zhu ◽  
Hechang Lei ◽  
Wenhai Song ◽  
Zhaorong Yang ◽  
...  
Keyword(s):  
Zinc Oxide ◽  
Chemical Solution Deposition ◽  
Oxide Films ◽  
Chemical Solution ◽  
Solution Deposition ◽  
Zinc Oxide Films ◽  
Aluminum Doped Zinc Oxide

Transparent conducting oxide films of group V doped titania prepared by aqueous chemical solution deposition

2014 ◽  
Vol 555 ◽  
pp. 33-38 ◽  
Author(s):  
Ken Elen ◽  
Boris Capon ◽  
Christopher De Dobbelaere ◽  
Daan Dewulf ◽  
Nick Peys ◽  
...  
Keyword(s):  
Chemical Solution Deposition ◽  
Transparent Conducting Oxide ◽  
Oxide Films ◽  
Chemical Solution ◽  
Group V ◽  
Solution Deposition ◽  
Transparent Conducting ◽  
Doped Titania

Aqueous chemical solution deposition of ultrathin lanthanide oxide dielectric films

2007 ◽  
Vol 22 (12) ◽  
pp. 3484-3493 ◽  
Author(s):  
An Hardy ◽  
Sven Van Elshocht ◽  
Jan D’Haen ◽  
Olivier Douhéret ◽  
Stefan De Gendt ◽  
...  
Keyword(s):  
Dielectric Properties ◽  
Chemical Solution Deposition ◽  
Oxide Films ◽  
Dielectric Films ◽  
Chemical Solution ◽  
Solution Deposition ◽  
Lanthanide Oxide ◽  
Force Microscopy ◽  
Si Substrates ◽  
Transmission Electron

Ultrathin lanthanide (Nd, Pr, Eu, Sm) oxide films with functional dielectric properties down to 3.3 nm thickness were deposited by aqueous chemical solution deposition (CSD) onto hydrophilic SiO2/Si substrates. Precursor solutions were prepared from the oxides via an intermediate, solid Ln(III)citrate. A film heat treatment scheme was derived from thermogravimetric analysis of the precursor gels, showing complete decomposition by 600 °C. Crystalline phase formation in the films depended on the lanthanide, annealing temperature, and citric acid content in the precursor. Through variation of the precursor concentration and number of deposited layers, thickness series of uniform films were obtained down to ∼3 nm. The film uniformity was demonstrated both by atomic force microscopy and cross-section transmission electron microscopy. The lanthanide oxide films possessed good dielectric properties. It was concluded that aqueous CSD allows deposition of uniform ultrathin films and may be useful for the evaluation of new high-k candidate materials.

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