scholarly journals Temperature Dependence of the Electric Field Induced Strains in Pb (Mg1/3Nb2/3)O3-Based Relaxor Ferroelectrics

1995 ◽  
Vol 103 (1193) ◽  
pp. 16-19 ◽  
Author(s):  
Jae-Hwan PARK ◽  
Byung-Kook KIM ◽  
Kug-Hyun SONG ◽  
Soon Ja PARK
Keyword(s):  
Electric Field ◽  
Temperature Dependence ◽  
Relaxor Ferroelectrics

TEMPERATURE-DEPENDENCE OF PROTON CONDUCTIVITY IN HYDROGEN-BONDED MOLECULAR SYSTEMS

2007 ◽  
Vol 21 (19) ◽  
pp. 1239-1252 ◽  
Author(s):  
XIAO-FENG PANG ◽  
BO DENG ◽  
HUAI-WU ZHANG ◽  
YUAN-PING FENG
Keyword(s):  
Experimental Data ◽  
Electric Field ◽  
Temperature Dependence ◽  
Electric Conductivity ◽  
Proton Conductivity ◽  
Model System ◽  
Time Dependent ◽  
Molecular Systems ◽  
Damping Effect ◽  
Hydrogen Bonded

The temperature-dependence of proton electric conductivity in hydrogen-bonded molecular systems with damping effect was studied. The time-dependent velocity of proton and its mobility are determined from the Hamiltonian of a model system. The calculated mobility of (3.57–3.76) × 10-6 m 2/ Vs for uniform ice is in agreement with the experimental value of (1 - 10) × 10-2 m 2/ Vs . When the temperature and damping effects of the medium are considered, the mobility is found to depend on the temperature for various electric field values in the system, i.e. the mobility increases initially and reaches a maximum at about 191 K, but decreases subsequently to a minimum at approximately 241 K, and increases again in the range of 150–270 K. This behavior agrees with experimental data of ice.

Temperature dependence of the electric field gradient at111Cd in Ga- and Bi-metal

1981 ◽  
Vol 9 (1-4) ◽  
pp. 293-296 ◽  
Author(s):  
W. Keppner ◽  
W. K�rner ◽  
P. Heubes ◽  
G. Schatz
Keyword(s):  
Electric Field ◽  
Electric Field Gradient ◽  
Temperature Dependence ◽  
Field Gradient

Temperature dependence of the electric field gradient in Er metal

1983 ◽  
Vol 15 (1-4) ◽  
pp. 283-287 ◽  
Author(s):  
M. H. Rafailovich ◽  
O. C. Kistner ◽  
E. Dafni ◽  
A. W. Sunyar ◽  
M. Mohsen ◽  
...  
Keyword(s):  
Electric Field ◽  
Electric Field Gradient ◽  
Temperature Dependence ◽  
Field Gradient

scholarly journals Atomically engineered interfaces yield extraordinary electrostriction

2021 ◽  
Author(s):  
Nini Pryds ◽  
Haiwu Zhang ◽  
Dae-Sung Park ◽  
Nicolas Gauquelin ◽  
Simone Santucci ◽  
...  
Keyword(s):  
Electric Field ◽  
Applied Electric Field ◽  
Dielectric Materials ◽  
Mechanical Deformation ◽  
Relaxor Ferroelectrics ◽  
Atomic Scale ◽  
Sensor Applications ◽  
Doped Ceo2 ◽  
Symmetry Breaking Phenomena ◽  
Electrostrictive Effect

Abstract Electrostriction is a property of all the dielectric materials where an applied electric field induces a mechanical deformation proportional to the square of the electric field. The magnitude of the effect is usually minuscule. However, recent discoveries of symmetry-breaking phenomena at interfaces opens up the possibility to extend the electrostrictive response to a broader family of dielectric materials.1,2 Here, we engineer the electrostrictive effect by epitaxially depositing alternating layers of Gd2O3-doped CeO2 and Er2O3-stabilized δ-Bi2O3 with atomically controlled interfaces on NdGaO3 substrates. We find that the electrostriction coefficient reaches 2.38×10-14 m2/V2, exceeding the best-known relaxor ferroelectrics by three orders of magnitude. Our atomic-scale calculations show that the extraordinary electrostriction coefficient is driven by the coherent strain imparted by the interfacial lattice mismatches. Thus, artificial heterostructures open a new avenue to design and manipulate electrostrictive materials and devices for nano/micro actuation and cutting-edge sensor applications.

Partial Dissolution of Charge Order Phase Observed in -(BEDT-TTF)2PF6 Single Crystal Field Effect Transistor

2016 ◽  
Vol 16 (4) ◽  
pp. 3267-3272
Author(s):  
Masatoshi Sakai ◽  
Norifumi Moritoshi ◽  
Shigekazu Kuniyoshi ◽  
Hiroshi Yamauchi ◽  
Kazuhiro Kudo ◽  
...  
Keyword(s):  
Electric Field ◽  
Single Crystal ◽  
Temperature Dependence ◽  
Crystal Field ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Electrical Conductance ◽  
Charge Order ◽  
Crystal Field Effect ◽  
Effect Transistor

The effect of an applied gate electric field on the charge-order phase in β-(BEDT-TTF)2PF6 single-crystal field-effect transistor structure was observed at around room temperature by technical improvement with respect to sample preparation and electrical measurements. A relatively slight but systematic increase of the electrical conductance induced by the applied gate electric field and its temperature dependence was observed at around the metal-insulator transition temperature (TMI). The temperature dependence of the modulated electrical conductance demonstrated that TMI was shifted toward the lower side by application of a gate electric field, which corresponds to partial dissolution of the charge-order phase. The thickness of the partially dissolved charge order region was estimated to be several score times larger than the charge accumulation region.

scholarly journals Erratum: Random electric field instabilities of relaxor ferroelectrics

2017 ◽  
Vol 2 (1) ◽  
Author(s):  
José R. Arce-Gamboa ◽  
Gian G. Guzmán-Verri
Keyword(s):  
Electric Field ◽  
Relaxor Ferroelectrics

Electric-field-induced local structural phenomena in Pb-based ABO3-type relaxor ferroelectrics

2015 ◽  
Vol 62 (1) ◽  
pp. 7-17 ◽  
Author(s):  
Boriana Mihailova ◽  
Bernd J. Maier ◽  
Thomas Steilmann ◽  
Evgeniy Dul'kin ◽  
Michael Roth
Keyword(s):  
Electric Field ◽  
Relaxor Ferroelectrics
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