Electric-field and temperature dependence of the activation energy associated with gate induced drain leakage

2013 ◽  
Vol 113 (4) ◽  
pp. 044513 ◽  
Author(s):  
Aaesha Alnuaimi ◽  
Ammar Nayfeh ◽  
Victor Koldyaev
Keyword(s):  
Activation Energy ◽  
Electric Field ◽  
Temperature Dependence

Lattice Imperfections and Relaxation of Cl NQR in Chloral Iso-Butylhemiacetal

1990 ◽  
Vol 45 (3-4) ◽  
pp. 481-484 ◽  
Author(s):  
Haruo Niki ◽  
Ryokan Igei ◽  
Takuya Higa ◽  
Masao Hashimoto ◽  
Takahiro Isono
Keyword(s):  
Activation Energy ◽  
Electric Field ◽  
Electric Field Gradient ◽  
Temperature Dependence ◽  
Field Gradient ◽  
Lattice Defects ◽  
Gradual Decrease ◽  
Line Broadening ◽  
Group A ◽  
The Difference

Abstract The temperature dependence of the S/N ratios of three 35Cl NQR lines (v1, v2 , v3) in chloral iso-butylhemiacetal shows interesting features in the range 77-300 K. 35Cl T1 indicates that above 220 K reorientation of CCl 3 is excited, and this results in a gradual decrease in S/N. The activation energy calculated from 35Cl NQR T1 results is 30 kJ mol-1 for v1 and v2 but 25 kJ mol -1 for v 3 . The difference seems to be attributable to the motion of H in the OH group. A minimum of 35Cl NQR T2 is found around 180 K but 35Cl T1 shows no anomaly. 35Cl T2 determines the S/N ratios in the range between 130-220 K. The line broadening below 130 K is attributable to an inhomogeneity of the electric field gradient at resonant nuclei produced by lattice defects.

TEMPERATURE-DEPENDENCE OF PROTON CONDUCTIVITY IN HYDROGEN-BONDED MOLECULAR SYSTEMS

2007 ◽  
Vol 21 (19) ◽  
pp. 1239-1252 ◽  
Author(s):  
XIAO-FENG PANG ◽  
BO DENG ◽  
HUAI-WU ZHANG ◽  
YUAN-PING FENG
Keyword(s):  
Experimental Data ◽  
Electric Field ◽  
Temperature Dependence ◽  
Electric Conductivity ◽  
Proton Conductivity ◽  
Model System ◽  
Time Dependent ◽  
Molecular Systems ◽  
Damping Effect ◽  
Hydrogen Bonded

The temperature-dependence of proton electric conductivity in hydrogen-bonded molecular systems with damping effect was studied. The time-dependent velocity of proton and its mobility are determined from the Hamiltonian of a model system. The calculated mobility of (3.57–3.76) × 10-6 m 2/ Vs for uniform ice is in agreement with the experimental value of (1 - 10) × 10-2 m 2/ Vs . When the temperature and damping effects of the medium are considered, the mobility is found to depend on the temperature for various electric field values in the system, i.e. the mobility increases initially and reaches a maximum at about 191 K, but decreases subsequently to a minimum at approximately 241 K, and increases again in the range of 150–270 K. This behavior agrees with experimental data of ice.

P+ implanted 6H-SiC n+-i-p diodes: evidence for a post-implantation-annealing dependent defect activation

2014 ◽  
Vol 1693 ◽  
Author(s):  
R. Nipoti ◽  
M. Puzzanghera ◽  
F. Moscatelli
Keyword(s):  
Activation Energy ◽  
Temperature Dependence ◽  
Ideality Factor ◽  
Low Voltage ◽  
Reverse Current ◽  
Forward Current ◽  
Current Region ◽  
Recombination Centers ◽  
Energy Dependent ◽  
Post Implantation

ABSTRACTTwo n+-i-p 6H-SiC diode families with P+ ion implanted emitter have been processed with all identical steps except the post implantation annealing: 1300°C/20min without C-cap has been compared with 1950°C/10min with C-cap. The analysis of the temperature dependence of the reverse current at low voltage (-100V) in the temperature range 27-290°C shows the dominance of a periphery current which is due to generation centers with number and activation energy dependent on the post implantation annealing process. The analysis of the temperature dependence of the forward current shows two ideality factor n region, one with n = 1.9/2 at low voltage and the other one with 1 < n < 2 without passing through 1 for increasing voltages. For both the diode families the current with n = 1.9/2 is a periphery current due to recombination centers with a thermal activation energy near the 6H-SiC mid gap. In the forward current region of 1 < n < 2, the two diode families show different ideality factor values which could be attributed to a different post implantation annealing defect activation.

Diffusion of Ce-Al Melts Measured by Sliding Cell Technique

2017 ◽  
Vol 898 ◽  
pp. 679-683
Author(s):  
Cheng Chen ◽  
Jin Liang Hu ◽  
Lang Xiang Zhong ◽  
Bo Zhang
Keyword(s):  
Activation Energy ◽  
Temperature Dependence ◽  
Strong Interaction ◽  
Al Alloy ◽  
Diffusion Behavior ◽  
Diffusion Constants

The diffusion behavior of Ce-Al alloy melt at three temperatures of 943K, 953K and 963K was investigated by sliding shear method. The inter-diffusion constants D show Arrhenius-type temperature dependence in the investigated regimes. Compared with the previous results achieved in Ce-Cu melt, liquid Ce-Al displays a much slower diffusion behavior and rather higher activation energy ED, which was caused by the strong interaction between Ce and Al.

Temperature dependence of the electric field gradient at111Cd in Ga- and Bi-metal

1981 ◽  
Vol 9 (1-4) ◽  
pp. 293-296 ◽  
Author(s):  
W. Keppner ◽  
W. K�rner ◽  
P. Heubes ◽  
G. Schatz
Keyword(s):  
Electric Field ◽  
Electric Field Gradient ◽  
Temperature Dependence ◽  
Field Gradient

Temperature dependence of the electric field gradient in Er metal

1983 ◽  
Vol 15 (1-4) ◽  
pp. 283-287 ◽  
Author(s):  
M. H. Rafailovich ◽  
O. C. Kistner ◽  
E. Dafni ◽  
A. W. Sunyar ◽  
M. Mohsen ◽  
...  
Keyword(s):  
Electric Field ◽  
Electric Field Gradient ◽  
Temperature Dependence ◽  
Field Gradient

scholarly journals SYNTHESIS AND ELECTRICAL CONDUCTIVITY OF SOLID SOLUTIONS OF THE SYSTEM RbF-PbF2-SnF2

2019 ◽  
Vol 85 (5) ◽  
pp. 60-68
Author(s):  
Yuliay Pogorenko ◽  
Anatoliy Omel’chuk ◽  
Roman Pshenichny ◽  
Anton Nagornyi
Keyword(s):  
Activation Energy ◽  
Electrical Conductivity ◽  
Temperature Dependence ◽  
Solid Solutions ◽  
Basic Structure ◽  
Elementary Cell ◽  
Initial Structure ◽  
Fluoride Ions ◽  
Temperature Range ◽  
Order Of Magnitude

In the system RbF–PbF2–SnF2 are formed solid solutions of the heterovalent substitution RbxPb0,86‑xSn1,14F4-x (0 < x ≤ 0,2) with structure of β–PbSnF4. At x > 0,2 on the X-ray diffractograms, in addition to the basic structure, additional peaks are recorded that do not correspond to the reflexes of the individual fluorides and can indicate the formation of a mixture of solid solutions of different composition. For single-phase solid solutions, the calculated parameters of the crystal lattice are satisfactorily described by the Vegard rule. The introduction of ions of Rb+ into the initial structure leads to an increase in the parameter a of the elementary cell from 5.967 for x = 0 to 5.970 for x = 0.20. The replacement of a part of leads ions to rubium ions an increase in electrical conductivity compared with β–PbSnF4 and Pb0.86Sn1.14F4. Insignificant substitution (up to 3.0 mol%) of ions Pb2+ at Rb+ at T<500 K per order of magnitude reduces the conductivity of the samples obtained, while the nature of its temperature dependence is similar to the temperature dependence of the conductivity of the sample β-PbSnF4. By replacing 5 mol. % of ions with Pb2+ on Rb+, the fluoride ion conductivity at T> 450 K is higher than the conductivity of the initial sample Pb0,86Sn1,14F4 and at temperatures below 450 K by an order of magnitude smaller. With further increase in the content of RbF the electrical conductivity of the samples increases throughout the temperature range, reaching the maximum values at x≥0.15 (σ573 = 0.34–0.41 S/cm, Ea = 0.16 eV and σ373 = (5.34–8.16)•10-2 S/cm, Ea = 0.48–0.51 eV, respectively). In the general case, the replacement of a part of the ions of Pb2+ with Rb+ to an increase in the electrical conductivity of the samples throughout the temperature range. The activation energy of conductivity with an increase in the content of RbF in the low-temperature region in the general case increases, and at temperatures above 400 K is inversely proportional decreasing. The nature of the dependence of the activation energy on the concentration of the heterovalent substituent and its value indicate that the conductivity of the samples obtained increases with an increase in the vacancies of fluoride ions in the structure of the solid solutions.

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