scholarly journals Investigation of the Material Removal Mechanism in Electrochemical Discharge Drilling Using a High-Speed Rotating Helical Tool-Electrode

2019 ◽  
pp. 9239-9254
Author(s):  
Xianchun Shi ◽  
Keyword(s):  
Material Removal ◽  
High Speed ◽  
Tool Electrode ◽  
Removal Mechanism ◽  
Material Removal Mechanism ◽  
Electrochemical Discharge

On Material Removal Mechanism in High Speed Single Grit Scratch-Grinding of Cryo-Treated Al2024-T351 Aluminium Alloy

2020 ◽  
Vol 1009 ◽  
pp. 123-128
Author(s):  
Sweety Satpathy ◽  
Amitava Ghosh
Keyword(s):  
Tensile Strength ◽  
Material Removal ◽  
High Speed ◽  
Scratch Test ◽  
Grinding Force ◽  
Removal Mechanism ◽  
Material Removal Mechanism ◽  
Grinding Tool ◽  
Side Flow ◽  
Single Grit Scratch

Feasibility of utilizing cryogenic technology to improve the shearability of Al2024-T351 alloy is experimentally investigated by carrying out a single grit scratch-grinding test. A single grit brazed diamond grinding tool is developed for the study. Al2024-T351 work specimens are treated with liquid nitrogen for 6 hours before the scratch test. Although there was no significant change in the tensile strength of the material, the surface experiences change in the microhardness. It helps in arresting the side flow and ploughing of the material during high speed scratch grinding. The scratched grooves on cryo-treated samples, compare to those of untreated specimens, shows signs of cleaner shear-cuts, superior finish and produces less grinding force during grinding

C28 Material removal mechanism by impact of high speed particles : Study on powder jet processing

2010 ◽  
Vol 2010.8 (0) ◽  
pp. 197-198
Author(s):  
Chihiro NISHIKAWA ◽  
Yuki KIHARA ◽  
Koichi MIZUTANI ◽  
Tianfeng ZHOU ◽  
Jiwang YAN ◽  
...  
Keyword(s):  
Material Removal ◽  
High Speed ◽  
Removal Mechanism ◽  
Material Removal Mechanism

Modeling and Analyzing on Nonuniformity of Material Removal in Chemical Mechanical Polishing of Silicon Wafer

2004 ◽  
Vol 471-472 ◽  
pp. 26-31 ◽  
Author(s):  
Jian Xiu Su ◽  
Dong Ming Guo ◽  
Ren Ke Kang ◽  
Zhu Ji Jin ◽  
X.J. Li ◽  
...  
Keyword(s):  
Silicon Wafer ◽  
Chemical Mechanical Polishing ◽  
Material Removal ◽  
Mechanical Polishing ◽  
Wafer Surface ◽  
Removal Mechanism ◽  
Particle Movement ◽  
Material Removal Mechanism ◽  
The Relationship ◽  
Nonuniform Material

Chemical mechanical polishing (CMP) has already become a mainstream technology in global planarization of wafer, but the mechanism of nonuniform material removal has not been revealed. In this paper, the calculation of particle movement tracks on wafer surface was conducted by the motion relationship between the wafer and the polishing pad on a large-sized single head CMP machine. Based on the distribution of particle tracks on wafer surface, the model for the within-wafer-nonuniformity (WIWNU) of material removal was put forward. By the calculation and analysis, the relationship between the motion variables of the CMP machine and the WIWNU of material removal on wafer surface had been derived. This model can be used not only for predicting the WIWNU, but also for providing theoretical guide to the design of CMP equipment, selecting the motion variables of CMP and further understanding the material removal mechanism in wafer CMP.

Fundamental study on material removal mechanism in single-crystal germanium

2021 ◽  
pp. 103773
Author(s):  
Ruiwen Geng ◽  
Xiaojing Yang ◽  
Qiming Xie ◽  
Jianguo Xiao ◽  
Wanqing Zhang ◽  
...  
Keyword(s):  
Single Crystal ◽  
Material Removal ◽  
Removal Mechanism ◽  
Material Removal Mechanism ◽  
Fundamental Study
Sign in / Sign up

Export Citation Format

Share Document