scholarly journals Study of the Electrochemical Preparation of Atom-Scale Iron Quantum Wire Controlled by an External Resistor

2018 ◽  
pp. 7571-7577
Author(s):  
Pei Zheng ◽  
Keyword(s):  
Quantum Wire ◽  
Electrochemical Preparation ◽  
External Resistor

Strain measurement in In0.2Ga0.8As/GaAs quantum wires by convergent beam electron diffraction

1995 ◽  
Vol 53 ◽  
pp. 444-445
Author(s):  
S. Hillyard ◽  
Y.-P. Chen ◽  
J.D. Reed ◽  
W.J. Schaff ◽  
L.F. Eastman ◽  
...  
Keyword(s):  
Electron Diffraction ◽  
Semiconductor Lasers ◽  
Quantum Wire ◽  
Quantum Wires ◽  
Convergent Beam Electron Diffraction ◽  
Zero Order ◽  
Beam Electron ◽  
Local Lattice ◽  
Device Applications ◽  
Convergent Beam

The positions of high-order Laue zone (HOLZ) lines in the zero order disc of convergent beam electron diffraction (CBED) patterns are extremely sensitive to local lattice parameters. With proper care, these can be measured to a level of one part in 104 in nanometer sized areas. Recent upgrades to the Cornell UHV STEM have made energy filtered CBED possible with a slow scan CCD, and this technique has been applied to the measurement of strain in In0.2Ga0.8 As wires.Semiconductor quantum wire structures have attracted much interest for potential device applications. For example, semiconductor lasers with quantum wires should exhibit an improvement in performance over quantum well counterparts. Strained quantum wires are expected to have even better performance. However, not much is known about the true behavior of strain in actual structures, a parameter critical to their performance.

Coherent Control of Semiconductor Quantum Wire by High-Resolution and Stable Michelson Interferometer

2008 ◽  
Vol 128 (6) ◽  
pp. 285-291
Author(s):  
Takumi Okada ◽  
Kazuhiro Komori ◽  
Xue-Lun Wang ◽  
Mutsuo Ogura ◽  
Noriaki Tsurumachi
Keyword(s):  
High Resolution ◽  
Quantum Wire ◽  
Coherent Control ◽  
Michelson Interferometer

scholarly journals Strong and robust polarization anisotropy of site- and size-controlled single InGaN/GaN quantum wires

2020 ◽  
Vol 10 (1) ◽  
Author(s):  
Hwan-Seop Yeo ◽  
Kwanjae Lee ◽  
Young Chul Sim ◽  
Seoung-Hwan Park ◽  
Yong-Hoon Cho
Keyword(s):  
Quantum Wire ◽  
Quantum Wires ◽  
Geometrical Shape ◽  
Optical Polarization ◽  
Polarization Anisotropy ◽  
Single Quantum ◽  
Group Iii ◽  
Highly Efficient ◽  
Group Iii Nitride ◽  
Size Controlled

Abstract Optical polarization is an indispensable component in photonic applications, the orthogonality of which extends the degree of freedom of information, and strongly polarized and highly efficient small-size emitters are essential for compact polarization-based devices. We propose a group III-nitride quantum wire for a highly-efficient, strongly-polarized emitter, the polarization anisotropy of which stems solely from its one-dimensionality. We fabricated a site-selective and size-controlled single quantum wire using the geometrical shape of a three-dimensional structure under a self-limited growth mechanism. We present a strong and robust optical polarization anisotropy at room temperature emerging from a group III-nitride single quantum wire. Based on polarization-resolved spectroscopy and strain-included 6-band k·p calculations, the strong anisotropy is mainly attributed to the anisotropic strain distribution caused by the one-dimensionality, and its robustness to temperature is associated with an asymmetric quantum confinement effect.

Electrochemical preparation of vertically aligned, hollow CdSe nanotubes and their p–n junction hybrids with electrodeposited Cu2O

Nanoscale ◽  
2014 ◽  
Vol 6 (15) ◽  
pp. 9148-9156 ◽  
Author(s):  
Joyashish Debgupta ◽  
Ramireddy Devarapalli ◽  
Shakeelur Rahman ◽  
Manjusha V. Shelke ◽  
Vijayamohanan K. Pillai
Keyword(s):  
Charge Carriers ◽  
Type Ii ◽  
Electrochemical Preparation ◽  
Enhanced Absorption ◽  
Absorption Of Light ◽  
Vertically Aligned ◽  
P Type

Heterojunction (type II) of self standing, vertically aligned CdSe NTs (n-type) with electrodeposited Cu2O (p-type) exhibits excellent photoresponse, resulting from enhanced absorption of light and faster transport of photogenerated charge carriers by CdSe NTs.

3D-Simulation of Novel Quantum Wire Transistors

1997 ◽  
Vol 204 (1) ◽  
pp. 346-349 ◽  
Author(s):  
C. Pigorsch ◽  
W. Wegscheider ◽  
W. Klix ◽  
R. Stenzel
Keyword(s):  
Quantum Wire ◽  
3D Simulation

scholarly journals Surface Enhanced Raman Spectroscopy With Electrodeposited Copper Ultramicro-Wires With/Without Silver Nanostars Decoration

Nanomaterials ◽  
2021 ◽  
Vol 11 (2) ◽  
pp. 518
Author(s):  
Margherita Longoni ◽  
Maria Sole Zalaffi ◽  
Lavinia de Ferri ◽  
Angela Maria Stortini ◽  
Giulio Pojana ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
Surface Enhanced Raman Spectroscopy ◽  
Anodized Aluminum ◽  
Anodized Aluminum Oxide ◽  
Electrochemical Preparation ◽  
Deposition Parameters ◽  
Raman Enhancement ◽  
Surface Enhanced ◽  
Surface Enhanced Raman ◽  
Materials Used

The electrochemical preparation of arrays of copper ultramicrowires (CuUWs) by using porous membranes as templates is critically revisited, with the goal of obtaining cheap but efficient substrates for surface enhanced Raman spectroscopy (SERS). The role of the materials used for the electrodeposition is examined, comparing membranes of anodized aluminum oxide (AAO) vs. track-etched polycarbonate (PC) as well as copper vs. glassy carbon (GC) as electrode material. A voltammetric study performed on bare electrodes and potentiostatic tests on membrane coated electrodes allowed the optimization of the deposition parameters. The final arrays of CuUWs were obtained by chemical etching of the template, with NaOH for AAO and CH2Cl2 for PC. After total etching of the template, SERS spectra were recorded on CuUWs using benzenethiol as SERS probe with known spectral features. The CuUW substrates displayed good SERS properties, providing enhancement factor in the 103–104 range. Finally, it was demonstrated that higher Raman enhancement can be achieved when CuUWs are decorated with silver nanostars, supporting the formation of SERS active hot-spots at the bimetallic interface.

Aharonov-Bohm-effect induced transparency and reflection in mesoscopic rings side coupled to a quantum wire

2020 ◽  
Vol 116 ◽  
pp. 113770 ◽  
Author(s):  
T. Mrabti ◽  
Z. Labdouti ◽  
A. Mouadili ◽  
E.H. El Boudouti ◽  
B. Djafari-Rouhani
Keyword(s):  
Quantum Wire ◽  
Bohm Effect ◽  
Induced Transparency ◽  
Aharonov Bohm
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