scholarly journals Solution of stochastic analog equation during nonequilibrium stage of phase transition and silicon carbide porosity

2016 ◽  
pp. 1-37 ◽  
Author(s):  
Tatiana Aleksandrovna Averina ◽  
Galina Ivanovna Zmievskaya ◽  
Anna Leonidovna Bondareva ◽  
Sergey Andreevich Khilkov
Keyword(s):  
Phase Transition ◽  
Silicon Carbide ◽  
Stochastic Analog ◽  
Analog Equation

scholarly journals The Effect of Channel Length on Phase Transition of Phase Change Memory

2018 ◽  
Vol 7 (3.11) ◽  
pp. 25
Author(s):  
M S. A.Aziz ◽  
F H. M.Fauzi ◽  
Z Mohamad ◽  
R I. Alip
Keyword(s):  
Phase Transition ◽  
Silicon Carbide ◽  
Phase Change ◽  
Pulse Width ◽  
Crystalline State ◽  
Phase Change Memory ◽  
Amorphous State ◽  
Channel Length ◽  
Change Memory

The phase transition of germanium antimony tellurium (GST) and the temperature of GST were investigated using COMSOL Multiphysic 5.0 software. Silicon carbide was using as a heater layer in the separate heater structure of PCM. These simulations have a different channel of SiC. The temperature of GST and the phase transition of GST can be obtained from the simulation. From the simulation, the 300 nm channel of SiC can change the GST from amorphous to crystalline state at 0.7V with 100 ns pulse width. The 800 nm channel of SiC can change the GST from amorphous to crystalline state at 1.1V with 100 ns pulse width. Results demonstrated that the channel of SIC can affecting the temperature of GST and the GST changes from amorphous state to crystalline state. As the channel of SiC decreased, the temperature of GST was increased and the GST was change to crystalline state quickly.  

Molecular Dynamic Simulation of Zigzag Silicon Carbide Nanoribbon

2021 ◽  
Vol 32 ◽  
Author(s):  
Hang Thi Thuy Nguyen
Keyword(s):  
Phase Transition ◽  
Molecular Dynamics ◽  
Silicon Carbide ◽  
Md Simulation ◽  
Structural Evolution ◽  
Order Type ◽  
Distribution Functions ◽  
Heating Process ◽  
Initial Model ◽  
First Order

The heating process of zigzag silicon carbide nanoribbon (SiCNR) is studied via molecular dynamics (MD) simulation. The initial model contained 10000 atoms is heating from 50K to 6000K to study the structural evolution of zigzag SiCNR. The melting point is defined at 4010K, the phase transition from solid to liquid exhibits the first-order type. The mechanism of structural evolution upon heating is studied based on the radiral distribution functions, coordination number, ring distributions, and angle distributions.

A reversible high-pressure second-order phase transition in silicon carbide ceramics SiC–BeO

2016 ◽  
Vol 80 (5) ◽  
pp. 500-503 ◽  
Author(s):  
G. K. Safaraliev ◽  
S. N. Emirov ◽  
Sh. Sh. Shabanov ◽  
G. D. Kardashova ◽  
R. R. Akhmedov ◽  
...  
Keyword(s):  
Phase Transition ◽  
Silicon Carbide ◽  
High Pressure ◽  
Order Phase Transition ◽  
Second Order ◽  
Carbide Ceramics ◽  
Silicon Carbide Ceramics ◽  
Second Order Phase Transition

First-principles study of pressure-induced phase transition in silicon carbide

2008 ◽  
Vol 403 (19-20) ◽  
pp. 3543-3546 ◽  
Author(s):  
Yu-Ping Lu ◽  
Duan-Wei He ◽  
Jun Zhu ◽  
Xiang-Dong Yang
Keyword(s):  
Phase Transition ◽  
Silicon Carbide ◽  
First Principles ◽  
First Principles Study

Liquid–Liquid Phase Transition in Nanoconfined Silicon Carbide

2016 ◽  
Vol 138 (8) ◽  
pp. 2815-2822 ◽  
Author(s):  
Weikang Wu ◽  
Leining Zhang ◽  
Sida Liu ◽  
Hongru Ren ◽  
Xuyan Zhou ◽  
...  
Keyword(s):  
Phase Transition ◽  
Silicon Carbide ◽  
Liquid Phase ◽  
Liquid Phase Transition

Silicon Carbide Solid-Phase Epitaxy on a Microporous Substratum

2012 ◽  
Vol 326-328 ◽  
pp. 243-248 ◽  
Author(s):  
Galina I. Zmievskaya ◽  
Anna L. Bondareva ◽  
V.V. Savchenko ◽  
Tatiana V. Levchenko
Keyword(s):  
Phase Transition ◽  
Computer Simulation ◽  
Silicon Carbide ◽  
Solid State ◽  
Stochastic Model ◽  
Solid Phase ◽  
Inert Gas ◽  
Self Organization ◽  
Solid Phase Epitaxy ◽  
Initial Stage

The action flux of ions of inert gas on the substratum Si (100) leads to porosity into the crystal lattice and self-organization of these defects. The kinetic stochastic model of the phase transition at the initial stage is applied to find distributions of defects in sizes and on their coordinates in the layers. The accumulation of stress is determined by computer simulation. Layers of pores and cracks precede to solid state epitaxy of silicon carbide.

Amorphous to crystalline phase transition in pulsed laser deposited silicon carbide

2007 ◽  
Vol 253 (17) ◽  
pp. 7050-7059 ◽  
Author(s):  
M. Tabbal ◽  
A. Said ◽  
E. Hannoun ◽  
T. Christidis
Keyword(s):  
Phase Transition ◽  
Silicon Carbide ◽  
Crystalline Phase ◽  
Pulsed Laser ◽  
Crystalline Phase Transition

scholarly journals In situ observation of a phase transition in silicon carbide under shock compression using pulsed x-ray diffraction

2019 ◽  
Vol 99 (21) ◽  
Author(s):  
S. J. Tracy ◽  
R. F. Smith ◽  
J. K. Wicks ◽  
D. E. Fratanduono ◽  
A. E. Gleason ◽  
...  
Keyword(s):  
Phase Transition ◽  
Silicon Carbide ◽  
Shock Compression ◽  
In Situ Observation ◽  
X Ray Diffraction ◽  
X Ray

Silicon Nanocrystals at Elevated Temperatures: Retention of Photoluminescence and Diamond Silicon to β-Silicon Carbide Phase Transition

ACS Nano ◽  
2014 ◽  
Vol 8 (9) ◽  
pp. 9219-9223 ◽  
Author(s):  
Clare E. Rowland ◽  
Daniel C. Hannah ◽  
Arnaud Demortière ◽  
Jihua Yang ◽  
Russell E. Cook ◽  
...  
Keyword(s):  
Phase Transition ◽  
Silicon Carbide ◽  
Carbide Phase ◽  
Silicon Nanocrystals ◽  
Elevated Temperatures
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