Revisiting 2D Lattice Based Spin Flip-Flop Ising Model: Magnetic Properties of a Thin Film and Its Temperature Dependence

2014 ◽  
Vol 5 (3) ◽  
Author(s):  
Satya Pal Singh
Keyword(s):  
Thin Film ◽  
Magnetic Properties ◽  
Ising Model ◽  
Temperature Dependence ◽  
Flip Flop ◽  
Spin Flip

Temperature-Dependence of Static Magnetic Properties of FeGa Thin Film Fabricated by Pulsed Laser Deposition

2019 ◽  
Vol 120 (7) ◽  
pp. 626-631
Author(s):  
Yi Zhang ◽  
Mutellip Turghun ◽  
Chao Juan Huang ◽  
Tao Wang ◽  
FeiFei Wang ◽  
...  
Keyword(s):  
Thin Film ◽  
Magnetic Properties ◽  
Temperature Dependence ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition

Temperature dependence of the amplitude of power-law growth in the spin-flip kinetic Ising model

1993 ◽  
Vol 48 (6) ◽  
pp. 3661-3665 ◽  
Author(s):  
Martin-D. Lacasse ◽  
Martin Grant ◽  
Jorge Viñals
Keyword(s):  
Ising Model ◽  
Temperature Dependence ◽  
Power Law ◽  
Kinetic Ising Model ◽  
Spin Flip

Effect of backing on temperature dependence of thin-film magnetic properties

1972 ◽  
Vol 15 (9) ◽  
pp. 1267-1270
Author(s):  
V. G. Kazakov ◽  
V. A. Buravikhin ◽  
V. A. Pomazkin ◽  
L. N. Badulenko ◽  
M. M. Svetsov ◽  
...  
Keyword(s):  
Thin Film ◽  
Magnetic Properties ◽  
Temperature Dependence

scholarly journals High-yield fabrication of perpendicularly magnetised synthetic antiferromagnetic nanodiscs

Nano Research ◽  
2021 ◽  
Author(s):  
Emma N. Welbourne ◽  
Tarun Vemulkar ◽  
Russell P. Cowburn
Keyword(s):  
Thin Film ◽  
Magnetic Properties ◽  
Sacrificial Layer ◽  
Nanosphere Lithography ◽  
High Yield ◽  
Perpendicular Anisotropy ◽  
Ion Milling ◽  
Lift Off

AbstractSynthetic antiferromagnetic (SAF) particles with perpendicular anisotropy display a number of desirable characteristics for applications in biological and other fluid environments. We present an efficient and effective method for the patterning of ultrathin Ruderman-Kittel-Kasuya-Yoshida coupled, perpendicularly magnetised SAFs using a combination of nanosphere lithography and ion milling. A Ge sacrificial layer is utilised, which provides a clean and simple lift-off process, as well as maintaining the key magnetic properties that are beneficial to target applications. We demonstrate that the method is capable of producing a particularly high yield of well-defined, thin film based nanoparticles.

scholarly journals Precise control of Jeff=12 magnetic properties in Sr2IrO4 epitaxial thin films by variation of strain and thin film thickness

2020 ◽  
Vol 102 (21) ◽  
Author(s):  
Stephan Geprägs ◽  
Björn Erik Skovdal ◽  
Monika Scheufele ◽  
Matthias Opel ◽  
Didier Wermeille ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Magnetic Properties ◽  
Film Thickness ◽  
Epitaxial Thin Films ◽  
Thin Film Thickness ◽  
Precise Control

scholarly journals Thin film bi-epitaxy and transition characteristics of TiO2/TiN buffered VO2 on Si(100) substrates

MRS Advances ◽  
2016 ◽  
Vol 1 (37) ◽  
pp. 2635-2640 ◽  
Author(s):  
Adele Moatti ◽  
Reza Bayati ◽  
Srinivasa Rao Singamaneni ◽  
Jagdish Narayan
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Magnetic Properties ◽  
Frequency Factor ◽  
Misfit Strain ◽  
Buffer Layers ◽  
Intrinsic Defects ◽  
Domain Matching Epitaxy ◽  
Out Of Plane

ABSTRACTBi-epitaxial VO2 thin films with [011] out-of-plane orientation were integrated with Si(100) substrates through TiO2/TiN buffer layers. At the first step, TiN is grown epitaxially on Si(100), where a cube-on-cube epitaxy is achieved. Then, TiN was oxidized in-situ ending up having epitaxial r-TiO2. Finally, VO2 was deposited on top of TiO2. The alignment across the interfaces was stablished as VO2(011)║TiO2(110)║TiN(100)║Si(100) and VO2(110) /VO2(010)║TiO2(011)║TiN(112)║Si(112). The inter-planar spacing of VO2(010) and TiO2(011) equal to 2.26 and 2.50 Å, respectively. This results in a 9.78% tensile misfit strain in VO2(010) lattice which relaxes through 9/10 alteration domains with a frequency factor of 0.5, according to the domain matching epitaxy paradigm. Also, the inter-planar spacing of VO2(011) and TiO2(011) equals to 3.19 and 2.50 Å, respectively. This results in a 27.6% compressive misfit strain in VO2(011) lattice which relaxes through 3/4 alteration domains with a frequency factor of 0.57. We studied semiconductor to metal transition characteristics of VO2/TiO2/TiN/Si heterostructures and established a correlation between intrinsic defects and magnetic properties.

Analytical model and temperature dependence of the thin film SOI FET

1995 ◽  
Vol 38 (5) ◽  
pp. 949-959 ◽  
Author(s):  
S Scheinert ◽  
G Paasch ◽  
D Schipanski
Keyword(s):  
Thin Film ◽  
Temperature Dependence ◽  
Analytical Model
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