scholarly journals a-InGaZnO thin-film transistors for AMOLEDs: Electrical stability and pixel-circuit simulation

2009 ◽  
Vol 17 (6) ◽  
pp. 525 ◽  
Author(s):  
Charlene Chen ◽  
Katsumi Abe ◽  
Hideya Kumomi ◽  
Jerzy Kanicki
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Circuit Simulation ◽  
Electrical Stability ◽  
Pixel Circuit

A-IGZO Thin-film Transistors Integrated AMOLED Pixel Circuit with Data Line Controlled Light-emitting

2018 ◽  
Vol 39 (11) ◽  
pp. 1549-1556
Author(s):  
王兰兰 WANG Lan-lan ◽  
鲁 力 LU Li ◽  
于天宝 YU Tian-bao ◽  
廖聪维 LIAO Cong-wei ◽  
黄生祥 HUANG Sheng-xiang ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Light Emitting ◽  
Data Line ◽  
Pixel Circuit

scholarly journals Effects of Annealing Atmosphere on Electrical Performance and Stability of High-Mobility Indium-Gallium-Tin Oxide Thin-Film Transistors

Electronics ◽  
2020 ◽  
Vol 9 (11) ◽  
pp. 1875
Author(s):  
Hwan-Seok Jeong ◽  
Hyun Seok Cha ◽  
Seong Hyun Hwang ◽  
Hyuck-In Kwon
Keyword(s):  
Thin Film ◽  
Tin Oxide ◽  
Thin Film Transistors ◽  
High Mobility ◽  
Oxide Thin Film ◽  
Electrical Performance ◽  
Hydroxyl Groups ◽  
Annealing Atmosphere ◽  
Electrical Stability ◽  
Indium Gallium

In this study, we examined the effects of the annealing atmosphere on the electrical performance and stability of high-mobility indium-gallium-tin oxide (IGTO) thin-film transistors (TFTs). The annealing process was performed at a temperature of 180 °C under N2, O2, or air atmosphere after the deposition of IGTO thin films by direct current magnetron sputtering. The field-effect mobility (μFE) of the N2- and O2-annealed IGTO TFTs was 26.6 cm2/V·s and 25.0 cm2/V·s, respectively; these values were higher than that of the air-annealed IGTO TFT (μFE = 23.5 cm2/V·s). Furthermore, the stability of the N2- and O2-annealed IGTO TFTs under the application of a positive bias stress (PBS) was greater than that of the air-annealed device. However, the N2-annealed IGTO TFT exhibited a larger threshold voltage shift under negative bias illumination stress (NBIS) compared with the O2- and air-annealed IGTO TFTs. The obtained results indicate that O2 gas is the most suitable environment for the heat treatment of IGTO TFTs to maximize their electrical properties and stability. The low electrical stability of the air-annealed IGTO TFT under PBS and the N2-annealed IGTO TFT under NBIS are primarily attributed to the high density of hydroxyl groups and oxygen vacancies in the channel layers, respectively.

scholarly journals Effects of Interfacial Charge Depletion in Organic Thin-Film Transistors with Polymeric Dielectrics on Electrical Stability

Materials ◽  
2010 ◽  
Vol 3 (6) ◽  
pp. 3614-3624 ◽  
Author(s):  
Jaehoon Park ◽  
Jin-Hyuk Bae ◽  
Won-Ho Kim ◽  
Min-Hoi Kim ◽  
Chang-Min Keum ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Organic Thin Film Transistors ◽  
Organic Thin Film ◽  
Electrical Stability ◽  
Polymeric Dielectrics ◽  
Interfacial Charge ◽  
Charge Depletion

scholarly journals An AMOLED Pixel Circuit Based on LTPS Thin-film Transistors with Mono-Type Scanning Driving

Electronics ◽  
2020 ◽  
Vol 9 (4) ◽  
pp. 574
Author(s):  
Jianyuan Ke ◽  
Lianwen Deng ◽  
Liying Zhen ◽  
Qing Wu ◽  
Congwei Liao ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Light Emitting Diode ◽  
Monte Carlo Analysis ◽  
Internal Resistance ◽  
Silicon Thin Film ◽  
Active Matrix ◽  
Ir Drop ◽  
Control Functions ◽  
Pixel Circuit

Using low-temperature poly-silicon thin-film transistors (LTPS TFTs) as a basis, a pixel circuit for an active matrix organic light-emitting diode (AMOLED) with narrow bezel displays was developed. The pixel circuit features mono-type scanning signals, elimination of static power lines, and pixel-integrated emitting control functions. Therefore, gate driver circuits of the display bezel can be simplified efficiently. In addition, the pixel circuit has a high-resolution design due to an increase of the pulse width of the scan signal to extend the threshold voltage and internal–resistance drop (IR drop) detection period. Further, regarding the influences of process–voltage–temperature (PVT) variation in the pixel circuit, comparison investigations were carried out with the proposed circuit and other pixel circuits with mono-type scanning signals using Monte Carlo analysis. The feasibility of the proposed pixel circuit is well demonstrated, as the current variations can be reduced to 2.1% for the supplied power reduced from 5 V to 3 V due to IR drop, and the current variation is as low as 10.6% with operating temperatures from –40 degrees to 85 degrees.

Densely cross-linked polysiloxane dielectric for organic thin-film transistors with enhanced electrical stability

2019 ◽  
Vol 7 (19) ◽  
pp. 5821-5829 ◽  
Author(s):  
Joo-Young Kim ◽  
Eun Kyung Lee ◽  
Jiyoung Jung ◽  
Don-Wook Lee ◽  
Youngjun Yun ◽  
...  
Keyword(s):  
Thin Film ◽  
Hybrid Material ◽  
Thin Film Transistors ◽  
Gate Dielectric ◽  
Organic Thin Film Transistors ◽  
Cross Linking ◽  
Urethane Acrylate ◽  
Organic Thin Film ◽  
Electrical Stability ◽  
Inorganic Hybrid

A solution-processable organic–inorganic hybrid material composed of a polysiloxane urethane acrylate composite (PSUAC) was developed through a dual cross-linking mechanism and satisfies all the requirements for use as a gate dielectric for flexible organic thin-film transistors (OTFTs).

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