P-127: A ZnO Based Heterostructured n-i-n Light-Emitting Diode by Low-Cost Ultrasonic Spray Pyrolysis

2008 ◽  
Vol 39 (1) ◽  
pp. 1670
Author(s):  
Xiao Wei Sun ◽  
Junliang Zhao ◽  
Swee Tiam Tan ◽  
G. Q. Lo ◽  
D. L. Kwong
Keyword(s):  
Spray Pyrolysis ◽  
Light Emitting Diode ◽  
Low Cost ◽  
Ultrasonic Spray Pyrolysis ◽  
Light Emitting ◽  
Ultrasonic Spray

scholarly journals Low-Cost ZnO:YAG-Based Metal-Insulator-Semiconductor White Light-Emitting Diodes with Various Insulators

2014 ◽  
Vol 2014 ◽  
pp. 1-4
Author(s):  
Lung-Chien Chen ◽  
Chih-Hung Hsu ◽  
Xiuyu Zhang ◽  
Jia-Ren Wu
Keyword(s):  
Indium Tin Oxide ◽  
Low Cost ◽  
Ultrasonic Spray Pyrolysis ◽  
Insulator Layer ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor ◽  
Light Emitting ◽  
Ultrasonic Spray ◽  
Ito Glass ◽  
White Light Emitting Diodes

ZnO:YAG-based metal-insulator-semiconductor (MIS) diodes with various insulators were synthesized on an indium tin oxide (ITO) glass by ultrasonic spray pyrolysis. SiO2and MnZnO (MZO) were separately used as insulators. X-ray diffraction revealed the crystalline structure of the ZnO:YAG film. The photoluminescence (PL) properties of the ZnO:YAG film were studied and the color of photoluminescence was found to be almost white. The electrical properties of the diodes with different insulators and thicknesses were compared. The diode with the SiO2insulator had a lower threshold voltage, smaller leakage current, and a higher series resistance than that with the MZO insulator layer.

Growth and properties of fluorine-doped tin oxide films deposited by ultrasonic spray pyrolysis

2019 ◽  
Vol 36 (1) ◽  
pp. 76-93
Author(s):  
Rui Liu ◽  
Anping Ren ◽  
Zhen Yang ◽  
Song Tian ◽  
Yanqiu Tong ◽  
...  
Keyword(s):  
Spray Pyrolysis ◽  
Quality Factor ◽  
Tin Oxide ◽  
Low Cost ◽  
Ultrasonic Spray Pyrolysis ◽  
Optical Transmittance ◽  
Ultrasonic Spray ◽  
Average Optical Transmittance ◽  
Commercial Applications ◽  
Tin Oxide Films

We used low-cost ultrasonic spray pyrolysis to prepare fluorine-doped tin oxide film from 470 to 590°C in 30°C increments with air and nitrogen as carrier gas. The film had 86.4% optical transparency and 16.8 Ω/□ electrical resistivity. The quality factor was defined as average optical transmittance to the 10th power divided by square resistance. The quality factor for one film fabricated at 590°C was 139 × 10−4/Ω, which is acceptable for many commercial applications. Detailed analysis indicates that the optical and electrical properties are greatly influenced by the film microstructure which is a function of temperature.

scholarly journals Low-cost synthesis of AuNPs through ultrasonic spray pyrolysis

2020 ◽  
Vol 7 (5) ◽  
pp. 055017 ◽  
Author(s):  
Hanuma Reddy Tiyyagura ◽  
Peter Majerič ◽  
Ivan Anžel ◽  
Rebeka Rudolf
Keyword(s):  
Spray Pyrolysis ◽  
Low Cost ◽  
Ultrasonic Spray Pyrolysis ◽  
Ultrasonic Spray

scholarly journals Rapid Processing of In-Doped ZnO by Spray Pyrolysis from Environment-Friendly Precursor Solutions

Coatings ◽  
2019 ◽  
Vol 9 (4) ◽  
pp. 245 ◽  
Author(s):  
Nina Winkler ◽  
Adhi Wibowo ◽  
Bernhard Kubicek ◽  
Wolfgang Kautek ◽  
Giovanni Ligorio ◽  
...  
Keyword(s):  
Spray Pyrolysis ◽  
Metal Salt ◽  
Low Cost ◽  
Ultrasonic Spray Pyrolysis ◽  
High Growth ◽  
Processing Parameters ◽  
Solution Flow Rate ◽  
Solution Flow ◽  
Ultrasonic Spray ◽  
Rapid Processing

This study focused on the deposition of indium-doped zinc oxide (IZO) films at high growth rates by ultrasonic spray pyrolysis. We investigated the influence of processing parameters, such as temperature and solution flow rate, on the structural, optical, and electrical film properties. For all depositions, low-cost and low-toxicity aqueous solutions and metal salt precursors were used. Through the optimization of the spraying parameters and pattern, a spatially homogeneous IZO layer with transparency greater than 80%, resistivity of 3.82 × 10−3 Ω·cm for a thickness of 1800 nm (sheet resistance of 21.2 Ω/sq), Hall carrier density of 1.36 × 1020 cm−3, Hall mobility of 12.01 cm2 V−1 s−1, and work function of 4.4 eV was obtained. These films are suitable for implementation in optoelectronic and photovoltaic devices.

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