Oxide TFT with multilayer gate insulator for backplane of AMOLED device

2008 ◽  
Vol 16 (2) ◽  
pp. 265 ◽  
Author(s):  
Ho-Nyun Lee ◽  
Jaewoo Kyung ◽  
Myeon-Chang Sung ◽  
Do Youl Kim ◽  
Sun Kil Kang ◽  
...  
Keyword(s):  
Gate Insulator ◽  
Oxide Tft

(Invited) Gate Insulator for High Mobility Oxide TFT

2014 ◽  
Vol 64 (10) ◽  
pp. 123-128 ◽  
Author(s):  
S.-H. K. Park ◽  
H.-O. Kim ◽  
S.-H. Cho ◽  
M. K. Ryu ◽  
J.-H. Yang ◽  
...  
Keyword(s):  
High Mobility ◽  
Gate Insulator ◽  
Oxide Tft

Effect of hydrogen in the gate insulator on the bottom gate oxide TFT

2010 ◽  
Vol 11 (3) ◽  
pp. 113-118 ◽  
Author(s):  
Sang‐Hee Ko Park ◽  
Minki Ryu ◽  
Shinhyuk Yang ◽  
Sung Min Yoon ◽  
Chi‐Sun Hwang
Keyword(s):  
Gate Oxide ◽  
Gate Insulator ◽  
Oxide Tft ◽  
Bottom Gate

Investigation of ferroelectrics using conventional and in situ electron microscopy

1994 ◽  
Vol 52 ◽  
pp. 586-587
Author(s):  
V. Saikumar ◽  
H. M. Chan ◽  
M. P. Harmer
Keyword(s):  
Nonvolatile Memory ◽  
Ferroelectric Materials ◽  
Gate Insulator ◽  
Sensors And Actuators ◽  
In Situ Electron Microscopy ◽  
Ferroelectric Domains ◽  
Domain Boundaries ◽  
Domain Interactions ◽  
Memory Applications

In recent years, there has been a growing interest in the application of ferroelectric thin films for nonvolatile memory applications and as a gate insulator in DRAM structures. In addition, bulk ferroelectric materials are also widely used as components in electronic circuits and find numerous applications in sensors and actuators. To a large extent, the performance of ferroelectric materials are governed by the ferroelectric domains (with dimensions in the micron to sub-micron range) and the switching of domains in the presence of an applied field. Conventional TEM studies of ferroelectric domains structures, in conjunction with in-situ studies of the domain interactions can aid in explaining the behavior of ferroelectric materials, while providing some answers to the mechanisms and processes that influence the performance of ferroelectric materials. A few examples from bulk and thin film ferroelectric materials studied using the TEM are discussed below.Figure 1 shows micrographs of ferroelectric domains obtained from undoped and Fe-doped BaTiO3 single crystals. The domain boundaries have been identified as 90° domains with the boundaries parallel to <011>.

Influence of Si Surface Roughness on Electrical Characteristics of MOSFET with HfON Gate Insulator Formed by ECR Plasma Sputtering

2014 ◽  
Vol E97.C (5) ◽  
pp. 413-418 ◽  
Author(s):  
Dae-Hee HAN ◽  
Shun-ichiro OHMI ◽  
Tomoyuki SUWA ◽  
Philippe GAUBERT ◽  
Tadahiro OHMI
Keyword(s):  
Surface Roughness ◽  
Gate Insulator ◽  
Electrical Characteristics ◽  
Ecr Plasma ◽  
Plasma Sputtering
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