58.5:Late-News Paper: 14.3 inch Active Matrix-Based Plastic Electrophoretic Display Using Low Temperature Processes

2007 ◽  
Vol 38 (1) ◽  
pp. 1684-1685 ◽  
Author(s):  
Tae Hyung Hwang ◽  
Woojae Lee ◽  
Wang Su Hong ◽  
Sung Jin Kim ◽  
Sang Il Kim ◽  
...  
2006 ◽  
Vol 37 (1) ◽  
pp. 277 ◽  
Author(s):  
S. Moriya ◽  
T. Miyamoto ◽  
T. Saeki ◽  
T. Kawase ◽  
S. Inoue ◽  
...  

2001 ◽  
Vol 685 ◽  
Author(s):  
Ching-Wei Lin ◽  
Li-Jing Cheng ◽  
Yin-Lung Lu ◽  
Huang-Chung Cheng

AbstractA simple process sequence for fabrication of low temperature polysilicon (LTPS) TFTs with self-aligned graded LDD structure was demonstrated. The graded LDD structure was self-aligned by side-etch of Al under the photo-resist followed by excimer laser irradiation for dopant activation and laterally diffusion. The graded LDD polysilicon TFTs were suitable for high-speed operation and active matrix switches applications because they possessed low-leakage-current characteristic without sacrificing driving capability significantly and increasing overlap capacitance. The leakage current of graded LDD polysilicon TFTs at Vd = 5V and Vg = −10V could attain to below 1pA/μm without any hygrogenation process, when proper LDD length and laser activation process were applied. The on/off current ratios of these devices were also above 108. Furthermore, due to graded dopant distribution in LDD regions, the drain electric field could be reduced further, and as a result, graded LDD polysilicon TFTs provided high reliability for high voltage operation.


2010 ◽  
Vol 41 (1) ◽  
pp. 1646
Author(s):  
Yong Eui Lee ◽  
Sungil Woo ◽  
Young Tae Cho ◽  
Man Seop Choi ◽  
Yong Gir Choi ◽  
...  

2019 ◽  
Vol 50 (1) ◽  
pp. 1333-1336
Author(s):  
Michael Paul A. Jallorina ◽  
Juan Paolo S. Bermundo ◽  
Mami N. Fujii ◽  
Yasuaki Ishikawa ◽  
Yukiharu Uraoka

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