P-220L: Late-News Poster: Layer-Transfer of Silicon Single-Crystal Films on Large-Area Glass Substrates For Mobile Display Applications

2006 ◽  
Vol 37 (1) ◽  
pp. 280 ◽  
Author(s):  
Jim Sullivan ◽  
Harry R. Kirk ◽  
Albert J. Lamm ◽  
Sien Kang ◽  
Philip J. Ong ◽  
...  
Keyword(s):  
Single Crystal ◽  
Silicon Single Crystal ◽  
Layer Transfer ◽  
Large Area ◽  
Glass Substrates ◽  
Single Crystal Films ◽  
Crystal Films ◽  
Late News

Vapor phase epitaxial liftoff of GaAs and silicon single crystal films

1999 ◽  
Vol 58 (2) ◽  
pp. 141-146 ◽  
Author(s):  
W Chang ◽  
C.P Kao ◽  
G.A Pike ◽  
J.A Slone ◽  
E Yablonovitch
Keyword(s):  
Single Crystal ◽  
Vapor Phase ◽  
Silicon Single Crystal ◽  
Single Crystal Films ◽  
Crystal Films

Heteroepitaxial Nucleation of Diamond

1995 ◽  
Vol 416 ◽  
Author(s):  
B. R. Stoner ◽  
P. J. Ellis ◽  
M. T. Mcclure ◽  
S. D. Wolter
Keyword(s):  
Single Crystal ◽  
Electronic Transport ◽  
Diamond Films ◽  
Heteroepitaxial Growth ◽  
Large Area ◽  
Diamond Nucleation ◽  
Single Crystal Diamond ◽  
Single Crystal Films ◽  
Crystal Films

ABSTRACTThe heteroepitaxial nucleation and eventual growth of large area single crystal diamond films has long eluded researchers interested in tapping it's many enabling properties, specifically in the field of active electronics. The uncertainty surrounding the diamond nucleation mechanism(s) and corresponding inability to carefully control this process are often blamed for the difficulty in achieving true heteroepitaxial growth. Biasenhanced nucleation (BEN) has been shown to provide in-situ control of the nucleation process. Subsequent advancements in both nucleation and deposition stages has resulted in highly oriented diamond films, approaching single crystal quality yet still plagued by arrays of medium to low angle grain boundaries that can degrade the electronic transport properties. To further improve upon these results and achieve large area, single crystal films it is believed that development must focus on the more fundamental problems of diamond nucleation. This paper presents a review of recent progress pertaining to the bias-enhanced process and focuses on data specific to the epitaxial nucleation dilemma.

A fractional crystallization technique towards pure mega-size CsPb2Br5 single crystal films

CrystEngComm ◽  
2019 ◽  
Vol 21 (9) ◽  
pp. 1352-1357 ◽  
Author(s):  
Jian Yin ◽  
Guodong Zhang ◽  
Xutang Tao
Keyword(s):  
Single Crystal ◽  
Fractional Crystallization ◽  
High Stability ◽  
Large Area ◽  
Simple Method ◽  
Single Crystal Films ◽  
Crystal Films

A simple method called fractional crystallization was introduced to prepare pure large-area CsPb2Br5 single crystal films with high stability.

Structure of Palladium Single-Crystal Films Prepared by Flash Evaporation onto (001) NaCl Substrates

1970 ◽  
Vol 28 ◽  
pp. 456-457
Author(s):  
L. E. Murr ◽  
G. Wong
Keyword(s):  
Single Crystal ◽  
High Vacuum ◽  
Ultra High Vacuum ◽  
High Rate ◽  
Flash Evaporation ◽  
Optimum Load ◽  
Single Crystal Films ◽  
Crystal Films ◽  
A Current

Palladium single-crystal films have been prepared by Matthews in ultra-high vacuum by evaporation onto (001) NaCl substrates cleaved in-situ, and maintained at ∼ 350° C. Murr has also produced large-grained and single-crystal Pd films by high-rate evaporation onto (001) NaCl air-cleaved substrates at 350°C. In the present work, very large (∼ 3cm2), continuous single-crystal films of Pd have been prepared by flash evaporation onto air-cleaved (001) NaCl substrates at temperatures at or below 250°C. Evaporation rates estimated to be ≧ 2000 Å/sec, were obtained by effectively short-circuiting 1 mil tungsten evaporation boats in a self-regulating system which maintained an optimum load current of approximately 90 amperes; corresponding to a current density through the boat of ∼ 4 × 104 amperes/cm2.

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