L-4: Late-News Paper: ThinCRT Display Technology Operating Life and Reliability Issues

2000 ◽  
Vol 31 (1) ◽  
pp. 1257 ◽  
Author(s):  
George Hopple ◽  
Chris Curtin ◽  
Y. Hatano
Keyword(s):  
Operating Life ◽  
Display Technology ◽  
Late News

45‐4: Late‐News Paper: A Novel ADS Display Technology without Light Leakage

2020 ◽  
Vol 51 (1) ◽  
pp. 665-668
Author(s):  
Feifei Wang ◽  
Hongming Zhan ◽  
Xibin Shao ◽  
Zhao Kang ◽  
Hua Huang ◽  
...  
Keyword(s):  
Display Technology ◽  
Late News

Latch-Up Induced Slit Voiding in Aluminum Metal Lines

1999 ◽  
Author(s):  
Chunyu Zhang ◽  
Lakshmi Vedula ◽  
Shekhar Khandekar
Keyword(s):  
High Temperature ◽  
Line Width ◽  
Fold Increase ◽  
Metal Line ◽  
Operating Life ◽  
Mixed Signal ◽  
Aluminum Metal ◽  
Temperature Operating ◽  
Latch Up

Abstract Latch-up induced during High Temperature Operating Life (HTOL) test of a mixed signal device fabricated with 1.0 μm CMOS, double poly, double metal process caused failures due to an open in aluminum metal line. Metal lines revealed wedge voids of about 50% of the line width. Triggering of latch up mechanism during the HTOL test resulted in a several fold increase of current flowing through the ground metal line. This increase in current resulted in the growth of the wedge voids leading to failures due to open metal lines.

IR Thermography for Temperature Measurements and Fault Location on AlGaN/GaN HEMTs and MMICs

2015 ◽  
Author(s):  
Lény Baczkowski ◽  
Franck Vouzelaud ◽  
Dominique Carisetti ◽  
Nicolas Sarazin ◽  
Jean-Claude Clément ◽  
...  
Keyword(s):  
Fault Location ◽  
Hot Spot ◽  
Life Time ◽  
High Electron Mobility Transistors ◽  
Junction Temperature ◽  
High Electron ◽  
Ir Thermography ◽  
Operating Life ◽  
Gan Hemt ◽  
Electron Mobility Transistors

Abstract This paper shows a specific approach based on infrared (IR) thermography to face the challenging aspects of thermal measurement, mapping, and failure analysis on AlGaN/GaN high electron-mobility transistors (HEMTs) and MMICs. In the first part of this paper, IR thermography is used for the temperature measurement. Results are compared with 3D thermal simulations (ANSYS) to validate the thermal model of an 8x125pm AIGaN/GaN HEMT on SiC substrate. Measurements at different baseplate temperature are also performed to highlight the non-linearity of the thermal properties of materials. Then, correlations between the junction temperature and the life time are also discussed. In the second part, IR thermography is used for hot spot detection. The interest of the system for defect localization on AIGaN/GaN HEMT technology is presented through two case studies: a high temperature operating life test and a temperature humidity bias test.

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